A kind of flexible surface acoustic wave carbon dioxide gas sensor and preparation method thereof
A gas sensor and surface acoustic wave technology, applied in the field of sensors, can solve problems such as troublesome installation and easy damage of sensors, and achieve the effects of convenient operation, simple manufacturing process, and easy promotion
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Embodiment 1
[0038] 1) Pretreatment of the flexible piezoelectric substrate layer: Take a 300 μm thick PVDF-TrFE (Piezotech) piezoelectric substrate and cut it into a geometric size of 35 cm×10 cm. Ultrasonic cleaning with absolute ethanol for 1min, deionized water for 30s, 0.02mol / L sodium hydroxide solution for 1min, deionized water for 3min, ultrasonic frequency 0.1KHz-80KHz, and dry with dry nitrogen for use.
[0039]2) Preparation of piezoelectric buffer layer: a Ta-ZnO piezoelectric buffer layer with a thickness of 0.1 μm was prepared on the surface of PVDF-TrFE by radio frequency magnetron sputtering. Put the PVDF-TrFE substrate into the sputtering chamber of the sputtering equipment, and evacuate the pressure of the sputtering chamber to 10 - 5 Pa, the target material is a sintered ceramic target doped with Ta and ZnO, wherein the mass fraction of Ta is 0.15%, and argon (99.99%) and oxygen (99.99%) are passed into, and the flow rate is adjusted so that the pressure in the sputteri...
Embodiment 2
[0046] 1) Pretreatment of the flexible piezoelectric substrate layer: take a PAN (Piezotech) piezoelectric substrate with a thickness of 500 μm, and cut it into a geometric size of 40 cm×10 cm. Ultrasonic cleaning with absolute ethanol for 1min, deionized water for 30s, 0.02mol / L sodium hydroxide solution for 1min, deionized water for 3min, ultrasonic frequency 0.1KHz-80KHz, and dry with dry nitrogen for use.
[0047] 2) Preparation of piezoelectric buffer layer: a Ta-ZnO piezoelectric buffer layer with a thickness of 0.08 μm was prepared on the surface of PAN by radio frequency magnetron sputtering. Put the PAN substrate into the vacuum chamber of the sputtering equipment, and evacuate the pressure of the vacuum chamber to 10 -5 Pa, the target material is a sintered ceramic target doped with Ta and ZnO, wherein the mass fraction of Ta is 0.1%, and argon (99.99%) and oxygen (99.99%) are passed through, and the flow rate is adjusted so that the pressure in the sputtering chambe...
Embodiment 3
[0052] 1) Pretreatment of the flexible piezoelectric substrate layer: Take a 200 μm thick β-PVDF (Piezotech) piezoelectric substrate and cut it into a geometric size of 5 cm×0.8 cm. Ultrasonic cleaning with absolute ethanol for 1min, deionized water for 30s, 0.01mol / L sodium hydroxide solution for 30s, deionized water for 3min, ultrasonic frequency 0.1KHz-80KHz, and dry with dry nitrogen for use.
[0053] 2) Preparation of piezoelectric buffer layer: a Ta-ZnO piezoelectric buffer layer with a thickness of 0.05 μm was prepared on the surface of β-PVDF by radio frequency magnetron sputtering. Put the β-PVDF substrate into the vacuum chamber of the sputtering equipment, and evacuate the pressure of the vacuum chamber to 10 -5 Pa, the target material is a sintered ceramic target doped with Ta and ZnO, wherein the mass fraction of Ta is 0.18%, and argon (99.99%) and oxygen (99.99%) are passed through, and the flow rate is adjusted so that the pressure in the sputtering chamber is 0...
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