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Three-terminal semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of device breakdown, metal roughness, changing electric field distribution, etc., to improve the withstand voltage, small contact resistance, The effect of reducing the effects of metal spikes

Pending Publication Date: 2020-04-10
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The multilayer metal combination of Ti / Al / Ni / Au is usually used to make electrodes with low contact resistance, but during the annealing process for making ohmic contacts, the metal becomes rough, and the diffusion of metal in the semiconductor leads to the presence of metal spikes under the ohmic electrodes , the end of the spike can even penetrate deep into the buffer layer, and a local high electric field appears at the end of the metal spike, thereby changing the electric field distribution and causing the device to be broken down in advance

Method used

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  • Three-terminal semiconductor device and manufacturing method thereof
  • Three-terminal semiconductor device and manufacturing method thereof
  • Three-terminal semiconductor device and manufacturing method thereof

Examples

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no. 1 example

[0049] see figure 1 , this embodiment provides a three-terminal semiconductor device 100 , and the three-terminal semiconductor device 100 includes a support layer 110 , a heterojunction 120 , a first electrode 130 , a second electrode 140 and a gate 150 .

[0050] Wherein, the support layer 110 includes one or more layers of Group-III nitride semiconductor films.

[0051]The heterojunction 120 is disposed on the support layer 110 . The heterojunction 120 includes two layers of Group III nitride semiconductor films. The interface of two thin films has electrons or holes with high depth and high mobility. Specifically, the heterojunction 120 includes a laminated film of AlGaN and GaN or a laminated film of AlInN and GaN.

[0052] Both the first electrode 130 and the second electrode 140 include: a doped layer 160 disposed on the heterojunction 120 and an electrode contact layer 170 disposed on the doped layer 160 . The doped layer 160 is n-type doped, and the doped layer 16...

no. 2 example

[0060] see figure 2 This embodiment provides a three-terminal semiconductor device 100, which has the same structure as the three-terminal semiconductor device 100 in the first embodiment, except that the gate 150 in this embodiment has a P-type gate structure.

[0061] The gate 150 includes a P-type doped layer 180 disposed on the heterojunction 120 and a gate electrode contact layer 190 disposed on the P-type doped layer 180 .

no. 3 example

[0063] see image 3 This embodiment provides a three-terminal semiconductor device 100, which has the same structure as the three-terminal semiconductor device 100 in the first embodiment, except that the gate 150 in this embodiment is a metal insulator semiconductor structure.

[0064] The gate 150 includes an insulating layer 200 disposed on the heterojunction 120 and a gate electrode contact layer 190 disposed on the insulating layer 200 .

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Abstract

The invention provides a three-terminal semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The three-terminal semiconductor device comprises a support layer, a heterojunction arranged on the support layer, and a first electrode, a second electrode and a grid electrode which are arranged on the heterojunction, wherein at least one of the first electrode and the second electrode comprises a doped layer arranged on the heterojunction and an electrode contact layer arranged on the doped layer. The three-terminal semiconductor device can reduce the contact resistance and the switching loss of a device, and does not cause the device to be broken down in advance.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a three-terminal semiconductor device and a manufacturing method thereof. Background technique [0002] At present, due to the large band gap of gallium nitride (GaN) materials, power semiconductor devices based on GaN materials can have higher breakdown voltage and higher power than traditional silicon (Si)-based power devices. Density; and using the inherent polarization characteristics of GaN materials, a two-dimensional electron gas channel with high concentration and high electron mobility can be formed, so it can have a higher switching frequency than traditional silicon-based power devices. Based on the high withstand voltage and high frequency characteristics of GaN, the AlGaN / GaN high mobility transistor (HEMT) with planar structure has a wide range of application requirements in the high voltage and high frequency fields. [0003] In RF / mmWave application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/45H01L21/335
CPCH01L29/778H01L29/454H01L29/66462
Inventor 李成果姜南曾巧玉任远
Owner GUANGDONG INST OF SEMICON IND TECH