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Manufacturing method of metal microstructure

A metal microstructure and metal film technology, applied in the field of ions, can solve the problems of complex process flow, toxicity, easy collapse, etc., and achieve the effects of simple equipment, convenient operation and high production efficiency

Inactive Publication Date: 2020-04-21
HOHAI UNIV CHANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The methods for changing the structure of the metal film include chemical treatment and photolithography. Although these methods can change the structure of the metal film to a certain extent, there are disadvantages such as complex and time-consuming process, easy collapse and certain toxicity.

Method used

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  • Manufacturing method of metal microstructure
  • Manufacturing method of metal microstructure

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preparation example Construction

[0027] A method for preparing a metal microstructure, using a negative voltage discharge plasma discharge device, under standard atmospheric pressure, the low-temperature plasma generated by negative voltage discharge is used to discharge the metal film, so that the surface of the metal film produces regular and uniform dots structure.

[0028] Discharge methods include glow discharge and corona discharge.

[0029] The metal film can be deposited on the substrate by evaporation, the substrate is preferably a silicon wafer, the film thickness is 100-200nm, and the metal is preferably gold or silver.

[0030] Negative voltage discharge plasma discharge device, with a high-voltage DC negative power supply as the main body, the positive electrode is connected to the metal film and grounded, the negative electrode is connected to the needle electrode, and a microammeter is connected in series in the circuit.

[0031] The insulating plug is for insulation and stable installation be...

Embodiment

[0035] Such as figure 1 The negative voltage discharge plasma discharge device shown adopts the corona discharge method, the needle electrode is connected to a DC high voltage negative power supply, and the silver film electrode is grounded; the plasma generated by the needle electrode acts on the surface of the silver film.

[0036] Proceed as follows:

[0037] S1, using alcohol and deionized water in sequence to ultrasonically clean the silicon wafer substrate for 30 minutes;

[0038] S2, evaporating a 150nm thick silver film on the silicon wafer;

[0039] S3. Under standard atmospheric pressure, the low-temperature plasma generated by negative voltage discharge acts on the surface of the silver film. The discharge negative voltage is 19KV, the discharge current is 10μA, and the discharge time is from 1 to 7min.

[0040] Such as figure 2 Shown, respectively, when the discharge time is 1min, 3min, 5min, 7min, the dot structure on the surface of the silver film observed wi...

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Abstract

The invention discloses a manufacturing method of a metal microstructure. A low-temperature plasma generated by negative voltage discharge to carry out discharge treatment on a metal film so that a regular morphology is generated on a surface of the metal film. High energy of particles in the plasma and contained active components such as ultraviolet, high-energy electrons and free radicals and the like are used to act on the surface of the metal film to generate a series of physical and chemical processes, erosion is generated on the surface of the metal film, and then a surface appearance ofthe metal film is changed so that a uniform dot-shaped structure appears on the surface. The method of the invention has advantages of simple equipment, convenient operation, low cost, high production efficiency, particularly low environmental pollution and the like. And under a same discharge condition, the surface film structure can be adjusted by changing discharge time and a thickness of themetal film, and the method can be widely applied to the fields of machinery, electronics, chemical energy, atomic energy, medicine and health, biology and the like, and has very high practicability and wide applicability.

Description

technical field [0001] The invention relates to a method for preparing a material structure, in particular to a method for preparing a metal microstructure, and belongs to the field of plasma technology. Background technique [0002] The metal film has the advantages of good mechanical properties, superior thermal conductivity, easy sealing, and easy integration and processing, and can be used in surface processing of materials, preparation of solar panels, and the like. [0003] Changing the structure of the metal film according to the requirements can reduce the surface defects of the metal film and improve the electrical and mechanical properties of the metal film. The methods for changing the structure of the metal film include chemical treatment and photolithography. Although these methods can change the structure of the metal film to a certain extent, they have the disadvantages of complex and time-consuming process, easy collapse and certain toxicity. [0004] Theref...

Claims

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Application Information

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IPC IPC(8): C23C14/58C23C14/24C23C14/16
CPCC23C14/5833C23C14/24C23C14/16
Inventor 阚雪芬殷澄王进华陈可
Owner HOHAI UNIV CHANGZHOU
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