Heating device for preparing high-quality aluminum nitride templates on large scale and preparation method

Abstract

The invention discloses a heating device for preparing high-quality aluminum nitride templates on a large scale and a preparation method, and aims to solve the problem that a heating device in the preparation of high-quality aluminum nitride templates in the prior art cannot meet the requirement of preparing aluminum nitride templates on a large scale. The heating device of the invention comprisesa heat preservation screen, a supporting platform and a mounting part; the supporting platform and the mounting part are both installed in the heat preservation screen; a lifting motor is fixed to the lower end of the supporting platform; the mounting part is fixed to the upper end of the supporting platform; an upper heater and an upper temperature monitor are installed above the mounting part;and a lower heater and a lower temperature monitor are installed below the mounting part. The heating device for preparing high-quality aluminum nitride templates on a large scale is designed; accurate uniform temperature control is realized; an aluminum nitride template optimization process is adopted; system thermal field design is optimized on the basis of a numerical simulation technology; andtherefore, the high-quality aluminum nitride templates can be prepared on a large scale.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a heating device and a preparation method for mass-preparing high-quality aluminum nitride templates. Background technique [0002] Semiconductor materials such as traditional silicon bases can no longer meet the development requirements of current electronic devices. Aluminum nitride (AlN), as a typical representative of the third-generation / fourth-generation semiconductor materials, has superior physical and chemical properties such as ultra-wide bandgap, high thermal conductivity, high breakdown field strength, high electron mobility, corrosion resistance, and radiation resistance. performance, especially suitable for manufacturing optoelectronic devices, radio frequency communication devices, high power / high frequency power electronic devices, etc. Excellent substrate material, widely used in environmental protection, electronics, wireless communication, printing, biology, medi...

AI Technical Summary

Problems solved by technology

In the preparation method of the international publication WO 2017 / 043628 A1, annealing at a high temperature (>1500°C) is more conducive to obtaining a high level of crystallinity, but when the temperature is greater than 1700°C, the dissociation of the aluminum nitride layer easily occurs, and the surface morphology is destroyed. There is an uneven interface; even the oxygen at the interface between the film and sapphire diffuses to the film surface to affect the epitaxial growth, and it is difficult to obtain a higher crystal quality of the low-thickness and high-thickness aluminum nitride template.

In the preparation method disclosed in China CN 108950477 A, the preparation of a single sheet or a small number of aluminum nitride templates cannot meet the requirements of low cost, high quality, high uniformity and mass production, and heat treatment equipment and mass production of high-quality nitride The design of the heating device of the aluminum template cannot meet the quality uniformity and the ability of batch preparation

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