Selective emitter solar cell and preparation method thereof
A solar cell and emitter technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems that the battery efficiency needs to be improved and the front composite of selective emitter solar cells is large.
Inactive Publication Date: 2020-05-19
ZHEJIANG JINKO SOLAR CO LTD +1
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Problems solved by technology
[0004] The purpose of the present invention is to provide a selective emitter solar cell and its preparation method to solve the problem that the front side of the selective emitter solar cell is large and the cell efficiency needs to be improved in the prior art
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[0030] The core of the present invention is to provide a method for preparing a selective emitter solar cell, and a schematic flow diagram of a specific implementation thereof is as follows figure 1 As shown, it is called the first specific implementation mode, including:
[0031] Step S101 : Texturing the front side of the P-type silicon wafer 100 .
[0032] The resistivity of the P-type silicon wafer 100 ranges from 0.3 Ohm / cm to 10 Ohm / cm, inclusive, such as any one of 0.30 Ohm / cm, 5.26 Ohm / cm or 10.00 Ohm / cm.
[0033] Step S102 : setting a silicon oxide layer 112 on the front surface of the textured P-type silicon wafer 100 .
[0034] The silicon oxide layer 112 has a thickness ranging from 0.5 nm to 10 nm, inclusive, such as any one of 0.50 nm, 5.32 nm or 10.00 nm.
[0035] Step S103 : setting a heavily doped polysilicon layer 111 on the surface of the silicon oxide layer 112 .
[0036] The heavily doped polysilicon layer is a phosphorus-doped n+ type polysilicon layer...
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Abstract
The invention discloses a preparation method of a selective emitter solar cell. The preparation method comprises the following steps: performing front texturing on a P-type silicon wafer; arranging asilicon oxide layer on the front surface of the textured P-type silicon wafer; arranging a heavily doped polysilicon layer on the surface of the silicon oxide layer; removing the silicon oxide layer and the heavily doped polysilicon layer in a non-metal region on the P-type silicon wafer to obtain a solar cell precursor; carrying out lightly doped phosphorus diffusion on the front surface of the solar cell precursor to obtain a lightly doped phosphorus diffusion layer; etching the back surface of the solar cell precursor, and arranging a back surface passivation layer and a front surface anti-reflection layer; and arranging an electrode on the surface of the solar cell precursor on which the back passivation layer and the front anti-reflection layer are arranged to obtain the selective emitter solar cell. Open-circuit voltage can be improved while surface metal contact recombination is reduced, and battery efficiency is improved. The invention also provides the selective emitter solarcell with the above beneficial effects.
Description
technical field [0001] The invention relates to the field of photovoltaic new energy, in particular to a selective emitter solar cell and a preparation method thereof. Background technique [0002] As one of the fastest-growing fields in solar photovoltaic utilization, the technical development of crystalline silicon cells has attracted much attention, but the limitation of its cost per kilowatt-hour has led to insufficient market competition. The solution to this problem is technological innovation in the final analysis, and people continue to research and develop More potential battery structure, optimized process, so as to improve the efficiency of crystalline silicon battery. On the P-type substrate, the conventional selective emitter (SE, selective emitter) structure process has been relatively well optimized to achieve mass production, but so far, its battery efficiency still needs to be improved, and the front side of the battery is still relatively low. Big. [000...
Claims
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Login to View More IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 郭瑶杨洁张昕宇郑霈霆金浩
Owner ZHEJIANG JINKO SOLAR CO LTD