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Preparation method of hybrid-structure solar cell

A solar cell and hybrid structure technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult promotion and low photoelectric conversion efficiency, and achieve the effects of simplifying the preparation process, easy to popularize in a large area, and less structural defects

Active Publication Date: 2020-05-19
YANSHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoelectric conversion efficiency of traditional single-junction thin-film solar cells is low, and it is difficult to promote large-scale applications in the commercial field.

Method used

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  • Preparation method of hybrid-structure solar cell
  • Preparation method of hybrid-structure solar cell
  • Preparation method of hybrid-structure solar cell

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preparation example Construction

[0033] Such as Figure 1-6 Shown, a kind of preparation method of hybrid structure solar cell comprises the steps:

[0034] a. In the MOCVD or MBE reaction system, prepare the bottom doped film 2 on the surface of the substrate 1 at the preparation temperature of the bottom doped film 2;

[0035] b. In the MOCVD or MBE reaction system, prepare the upper layer doped film 3 on the surface of the bottom layer doped film 2 at the preparation temperature of the upper layer doped film 3;

[0036] c. Spin-coat metal catalyst particles on the surface of the upper doped film 3 or prepare catalyst particles 4 on the surface of the upper doped film 3 by using metal thin film annealing technology;

[0037] There are two methods for preparing catalyst particles 4 in this step:

[0038] One is, after the MOCVD reaction system drops to room temperature, take out the substrate prepared with the bottom layer and the upper layer film from the MOCVD reaction system, and spin-coat a layer of me...

Embodiment 1

[0052] The preparation of InP homogeneous hybrid structure solar cells based on InP substrates, the specific steps are as follows:

[0053] a. In the MOCVD reaction system, adjust the temperature of the reaction system to the preparation temperature required for the underlying doped film, and start supplying p-type doped zinc (Zn) source, indium (In) source, phosphorus (P) source and other reactants The bottom p-type doped InP thin film is prepared.

[0054] b. After 500 seconds, stop supplying various reactants. Adjust the temperature of the reaction system to the preparation temperature required for the upper-layer doped film, and start supplying n-type doped silicon (Si) source, indium (In) source, phosphorus (P) source and other reactants for the upper-layer n-type doped InP film preparation.

[0055] c. After 300 seconds, stop supplying various reactants. After the MOCVD reaction system drops to room temperature, the InP substrate prepared with the bottom and upper fil...

Embodiment 2

[0060] The preparation of heterogeneous hybrid structure solar cells based on germanium (Ge) substrates, the specific steps are as follows:

[0061] a. In the MOCVD reaction system, adjust the temperature of the reaction system to the preparation temperature required for the underlying doped film, and start supplying p-type doped zinc (Zn) source, indium (In) source, phosphorus (P) source and other reactants The bottom p-type doped InP thin film is prepared.

[0062] b. After 300 seconds, stop supplying various reactants. Adjust the temperature of the reaction system to the preparation temperature required for the upper-layer doped film, and start supplying n-type doped silicon (Si) source, indium (In) source, gallium (Ga) source, phosphorus (P) source and other reactants for the upper layer n-type doped In x Ga 1-x Preparation of P thin films.

[0063] c. After 400 seconds, stop supplying various reactants. After the MOCVD reaction system dropped to room temperature, the...

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Abstract

The invention discloses a preparation method of a hybrid-structure solar cell, and belongs to the technical field of semiconductor solar cells. The method comprises the following steps: a, preparing abottom-layer doped film on the surface of a substrate at the preparation temperature of the bottom-layer doped film in a reaction system; b, preparing an upper-layer doped film on the surface of thebottom-layer doped film in the reaction system at the preparation temperature of the upper-layer doped film; c, spin-coating metal catalyst particles on the surface of the upper-layer doped film or preparing the catalyst particles on the surface of the upper-layer doped film by using a metal film annealing technology; d, in the reaction system, preparing bottom doped nanowires by utilizing the catalyst particles at the preparation temperature of the bottom doped nanowires; e, in the reaction system, preparing a top doped nanowire by utilizing the catalyst particles at the preparation temperature of the top doped nanowire; and f, after the reaction system is cooled to the room temperature, completing the preparation of the hybrid-structure solar cell. The solar cell prepared by the method is high in photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor solar cells, in particular to a method for preparing solar cells with a hybrid structure. Background technique [0002] With the continuous progress of human civilization, people's demand for energy is increasing day by day, and the problem of energy shortage is becoming more and more serious. Solar energy is an inexhaustible renewable energy source. Solar cells prepared by utilizing solar radiation can be well applied to various fields of people's lives. However, the photoelectric conversion efficiency of traditional single-junction thin-film solar cells is low, and it is difficult to promote them in a large area in the commercial field. In view of this, it is the motivation of the present invention to explore the preparation scheme of solar cells with new structures and solve the problems faced by traditional solar cells. Contents of the invention [0003] The technical problem to be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/0693H01L31/0735B82Y40/00
CPCH01L31/184H01L31/1852H01L31/1844H01L31/035227H01L31/035281H01L31/0693H01L31/0735B82Y40/00Y02E10/544Y02P70/50
Inventor 郭经纬刘妍
Owner YANSHAN UNIV
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