Multi-junction solar cell and preparation method thereof
A solar cell and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as mismatch between tunnel junctions and sub-cells, and achieve the effects of improving tunneling effect, reducing process difficulty, and reducing doping defects
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[0034] According to another aspect of the present invention, there is also provided a method for manufacturing the above-mentioned multi-junction solar cell, which includes the step of forming a tunnel junction layer 2: forming an N-type semiconductor layer 201 and a P-type semiconductor layer 202 on the sub-cell 1, and The N-type semiconductor layer 201 is located on the side of the sub-cell 1 away from the P-type semiconductor layer 202, or the P-type semiconductor layer 202 is located on the side of the sub-cell 1 away from the N-type semiconductor layer 201, the resulting multi-junction solar cell is such as Figure 1 to Figure 3 Shown.
[0035] In a preferred embodiment, the step of forming the above-mentioned N-type semiconductor layer 201 and the step of forming the above-mentioned P-type semiconductor layer 202 independently include: alternately forming stacked first-type doped layers 2011 and second doped layers on the sub-cell 1. The second type doped layer 2012, the fir...
Example Embodiment
[0055] Example 1
[0056] This embodiment provides a method for preparing a GaAs / GaInP double junction solar cell, wherein an epitaxially grown substrate is used, and the epitaxial layer includes: a p-GaInP back field layer, a P-GaAs base layer, an n-GaInAs emitting layer, -AlGaAs window layer, n++GaAs / p++AlGaAs tunnel junction, p-AlGaInP back field layer, p-GaInP base region, n-GaInP emission layer, n-AlInP window layer and n++GaInAs contact layer.
[0057] The above preparation method includes the following steps:
[0058] 1) Pass the Si substrate into the MOCVD equipment and pass H 2 Gas, raise the temperature to perform high temperature cleaning on the substrate, and the temperature is 600°C.
[0059] 2) Grow Al on the substrate X Ga 1-X As back field layer, the value of x is 0.5, the value of y is 0.5, the thickness is 100nm, and the growth temperature is 800°C.
[0060] 3) A GaAs base layer is grown on the back field layer with a thickness of 2500 nm and a growth temperature of 6...
Example Embodiment
[0070] Example 2
[0071] The difference between this embodiment and embodiment 1 is:
[0072] In step 6), the doping concentration of the first type doped layer formed is 0, and the doping concentration of the second type doped layer is 1E19.
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