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Multi-junction solar cell and preparation method thereof

A solar cell and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as mismatch between tunnel junctions and sub-cells, and achieve the effects of improving tunneling effect, reducing process difficulty, and reducing doping defects

Pending Publication Date: 2020-06-09
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a multi-junction solar cell and its preparation method to solve the problem of mismatch between the tunnel junction and the sub-cell in the multi-junction solar cell in the prior art

Method used

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  • Multi-junction solar cell and preparation method thereof
  • Multi-junction solar cell and preparation method thereof
  • Multi-junction solar cell and preparation method thereof

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[0034] According to another aspect of the present invention, there is also provided a method for preparing the above-mentioned multi-junction solar cell, including the step of forming a tunnel junction layer 2: forming an N-type semiconductor layer 201 and a P-type semiconductor layer 202 on the sub-cell 1, The N-type semiconductor layer 201 is located on the side of the sub-cell 1 away from the P-type semiconductor layer 202, or the P-type semiconductor layer 202 is located on the side of the sub-cell 1 away from the N-type semiconductor layer 201, and the obtained multi-junction solar cell is as follows Figure 1 to Figure 3 shown.

[0035] In a preferred embodiment, the step of forming the above-mentioned N-type semiconductor layer 201 and the step of forming the above-mentioned P-type semiconductor layer 202 independently include: alternately forming stacked first-type doped layers 2011 and second-type doped layers on the sub-cell 1 The second type doped layer 2012, the fi...

Embodiment 1

[0056] This embodiment provides a method for preparing a GaAs / GaInP double-junction solar cell, wherein an epitaxial growth substrate is used, and the epitaxial layer includes: a p-GaInP back field layer, a P-GaAs base layer, an n-GaInAs emission layer, n - AlGaAs window layer, n++GaAs / p++AlGaAs tunnel junction, p-AlGaInP back field layer, p-GaInP base region, n-GaInP emitter layer, n-AlInP window layer and n++GaInAs contact layer.

[0057] Above-mentioned preparation method comprises the following steps:

[0058] 1) Pass the Si substrate into the MOCVD equipment, pass through the H 2 Gas, raise the temperature to perform high-temperature cleaning on the substrate, the temperature is 600°C.

[0059] 2) Al growth on the substrate X Ga 1-X The As back field layer, where x takes a value of 0.5, y takes a value of 0.5, a thickness of 100nm, and a growth temperature of 800°C.

[0060] 3) A GaAs base layer is grown on the back field layer with a thickness of 2500nm and a growth ...

Embodiment 2

[0071] The difference between this embodiment and embodiment 1 is:

[0072] In step 6), the doping concentration of the formed first-type doped layer is 0, and the doping concentration of the second-type doped layer is 1E19.

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Abstract

The invention provides a multi-junction solar cell and a preparation method thereof. The multi-junction solar cell comprises a plurality of sub-cells and a tunnel junction layer connected with the sub-cells, wherein the tunnel junction layer is composed of an N-type semiconductor layer and a P-type semiconductor layer which are stacked; each of the N-type semiconductor layer and the P-type semiconductor layer comprises a plurality of first type doped layers; the first type doped layer is selected from any one of a lightly doped layer and a non-doped layer; the N-type semiconductor layer and the P-type semiconductor layer respectively comprise second type doped layers stacked alternately with the first type doped layers, the second type doped layer is a heavily doped layer; and the outermost layers of the N-type semiconductor layer and the P-type semiconductor layer are first type doped layers. According to the tunnel junction with the superlattice structure, doping defects can be reduced, the tunnel junction is convenient to grow, the process difficulty is reduced, and the matching performance with upper and lower layer sub-cells is high; moreover, the tunnel junction with the superlattice structure can also reduce the impedance of the tunnel junction and improve the tunneling effect of the tunnel junction.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a multi-junction solar cell and a preparation method thereof. Background technique [0002] Multi-junction GaAs solar cells are based on GaAs materials, and materials with different band gaps are used to form multi-junction cells. Each junction cell absorbs different bands of the solar spectrum, and the cell components are composed of tunnel junctions in series, with more than 40% Photoelectric conversion efficiency, in addition, it has the advantages of stable power generation, light weight, strong radiation resistance, and high land utilization rate. [0003] At present, GaAs solar cells are mainly made of metal-organic compounds, and are prepared by vapor phase deposition (MOCVD) or molecular beam epitaxy (MBE). As a transition junction for effectively interconnecting two subcells, the tunnel junction should feature high light transmittance and low impedance, and its la...

Claims

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Application Information

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IPC IPC(8): H01L31/0687H01L31/0693H01L31/18
CPCH01L31/0687H01L31/0693H01L31/1876Y02E10/544Y02P70/50
Inventor 罗轶张新勇李琳琳宋士佳
Owner 紫石能源有限公司
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