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Perovskite precursor, perovskite and solar cell

A perovskite precursor and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor stability, inability to balance stability and photoelectric conversion efficiency, low PCE, etc., and achieve good stability Effect

Active Publication Date: 2020-06-09
DALIAN UNIV OF TECH
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  • Abstract
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  • Claims
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Problems solved by technology

However, its commercialization is a challenge due to poor stability under moisture, light and heat
[0004] Aiming at the problem of stability, a 2D perovskite solar cell was proposed. Although 2D perovskite can improve the stability of perovskite solar cells as a light absorbing layer, it cannot take into account both stability and photoelectric conversion efficiency; for example, in In the Joule 2018, 3, 1-13 article, under the conditions of unencapsulated, 85 mm, 40-70% RH, although it has good stability, that is, the efficiency is still 95% of the initial efficiency after 168 hours, but its PCE is not Not high, only 13.3%

Method used

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  • Perovskite precursor, perovskite and solar cell
  • Perovskite precursor, perovskite and solar cell
  • Perovskite precursor, perovskite and solar cell

Examples

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preparation example Construction

[0060] The present invention also provides a kind of preparation method of perovskite, described method comprises:

[0061] S1: preparing a perovskite precursor solution;

[0062] S2: heating the substrate with the electron extraction layer;

[0063] S3: Spin coating the perovskite precursor solution onto the substrate of S2;

[0064] S4: Post-annealing to remove the solvent to obtain the perovskite material film.

[0065] The perovskite precursor in S1 is any one of the perovskite precursors mentioned above.

[0066] In this step S2, since the film forming method used is the pre-heating method, the substrate with the electron extraction layer needs to be heated, the heating temperature can be 65-85 ℃, and the heating time is 10-20 min.

[0067] In this step S3, since the substrate is thinner and the heat dissipation is faster, after the substrate is placed on the spin coater, the perovskite precursor solution should be coated on the substrate immediately and rotated rapidl...

Embodiment 1

[0082] Embodiment 1 prepares efficient and stable (DMAPA) MA 3 Pb 4 I 13 Perovskite solar cells

[0083] First, synthesize DMAPAI according to the method provided above in the present invention 2 . Then, weigh 89.5mg of DMAPAI 2 , 119.25mg MAI and 461mg PbI 2 Dissolved in 920 μL DMF, prepared perovskite precursor solution with 2.53 mg MACl and 80 μL DMSO as additives, TiO 2 The electron transport layer substrate is heated to 75°C, and then a perovskite film is prepared on it. The film preparation method is accelerated to 4000rpm for 1s, kept for 50s, and then post-annealed on a hot stage at 120°C for 7.5min to remove the solvent, and then according to the present invention Prepare the Spiro-OMeTAD layer in the battery preparation method, and evaporate the Au layer to complete the preparation of the battery. Place the battery under a standard sunlight intensity, and use a Keithley 2400 digital source meter to test the J-V curve of the battery, such as figure 2 As shown...

Embodiment 2

[0084] Embodiment 2 prepares efficient and stable (DMAPA) FA 4 Pb 5 I 16 Perovskite solar cells

[0085] The preparation method is basically the same as in Example 1, the difference is that: take 71.6mg DMAPAI 2 , 137.6mg FAI and 461mg PbI 2 Dissolve in 950 μL DMF with additives of 50 μL DMSO and 2 mg NH 4 Cl to prepare the perovskite precursor solution; TiO 2 The electron transport layer substrate was heated to 85°C, and then a perovskite film was prepared on it; the film preparation method was accelerated to 4000rpm for 1s, kept for 50s, and the post-annealing temperature was 100°C for 10min. After the battery is prepared, the battery is placed under a standard sunlight intensity, and the J-V curve of the battery is tested using a Keithley 2400 digital source meter, and the open circuit voltage of the battery is 1.01V, and the short circuit current density is 20.59mA cm -2 , the fill factor is 59%, and the photoelectric conversion efficiency is 12.33%. The battery sta...

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Abstract

The embodiment of the invention provides a perovskite precursor, perovskite and a solar cell. The perovskite precursor is obtained by mixing asymmetric organic diamine halide salt, an organic component, an inorganic component, an additive and an organic solvent. According to the invention, the perovskite precursor is prepared by adding the asymmetric organic diamine halide salt, so that the perovskite formed based on the perovskite precursor has better stability under moisture, light and heat, and the solar cell assembled by the perovskite has both stability and photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, and relates to a perovskite precursor, perovskite and solar cells. Background technique [0002] Since the 21st century, with the rapid development of human society, the human demand for energy has also increased, and energy issues have become a major issue that cannot be ignored. Energy on the earth comes from solar energy in essence, and converting solar energy directly into electrical energy is the most effective way to utilize solar energy, and solar cells are the most effective tool. At present, the dominant solar cells in the market are monocrystalline silicon and polycrystalline silicon solar cells. These two solar technologies are relatively mature, with long service life and high photoelectric conversion efficiency. However, due to the high purity requirements of raw materials, silicon-based solar cells are complicated to manufacture and the cost is too high, so it is impossible to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48C07C211/09C07C211/04C07C209/68C07C257/12
CPCC07C211/09C07C211/04C07C209/68C07C257/12H10K71/12H10K85/30H10K30/15H10K30/151H10K30/152Y02E10/549
Inventor 史彦涛赵伟冬董庆顺
Owner DALIAN UNIV OF TECH
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