Preparation method for MoS2/WS2 vertical heterojunction

A heterojunction, mass ratio technology, applied in gaseous chemical plating, electrolytic coatings, surface reaction electrolytic coatings, etc., can solve the problems of easy formation of alloys, poor controllability, and low vertical heterojunction yield, etc. Ease of molybdenum-sulfur ratio, control of molybdenum-sulfur ratio, avoidance of atomic substitution and effects of thermal decomposition

Active Publication Date: 2020-06-30
XIAMEN UNIV
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Problems solved by technology

The disadvantage of this method is that the prepared WS 2 /MoS 2 Vertical

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  • Preparation method for MoS2/WS2 vertical heterojunction
  • Preparation method for MoS2/WS2 vertical heterojunction
  • Preparation method for MoS2/WS2 vertical heterojunction

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[0026] Example 1

[0027] (1) SiO 2 / Si substrate preparation of tungsten disulfide

[0028] Take WO 3 (0.05g) powder and S powder (0.2g) as precursors, first cut the 1cm*2cm SiO 2 / Si substrate was ultrasonically cleaned in acetone and isopropanol solution for 10min with N 2 Blow dry and put a certain amount of WO 3 Powder is placed in the ceramic boat, the SiO 2 The / Si substrate is inverted on the ceramic boat and placed in the high temperature zone of the tube furnace, and the quartz boat filled with sulfur powder is placed in the low temperature zone of the tube furnace so that the distance between the two is 36cm, and the pressure in the quartz tube is reduced by a vacuum pump After pumping to 0.1pa, pour 500sccm of argon gas into the quartz tube for cleaning, repeat 4 times, and set the Ar gas flow rate to 30sccm after the rinse is over. Heat the tube furnace, heat up to 800℃, hold for 5 minutes, when the sulfur powder reaches the sublimation temperature, it begins to sublim...

Example Embodiment

[0032] Example 2

[0033] (1) SiO 2 / Si substrate preparation of tungsten disulfide

[0034] Take WO 3 (0.05g) powder and S (0.2g) powder as precursors, first cut the 1cm*2cm SiO 2 / Si substrate was ultrasonically cleaned in acetone and isopropanol solution for 15min with N 2 Blow dry and put a certain amount of WO 3 Powder is placed in the ceramic boat, the SiO 2 The / Si substrate is inverted on the ceramic boat and placed in the high temperature zone of the tube furnace. The quartz boat filled with sulfur powder is placed in the low temperature zone of the tube furnace so that the distance between the two is 36cm. The pressure in the quartz tube is reduced by a vacuum pump. After pumping to 0.1pa, argon gas of 500 sccm was passed into the quartz tube for cleaning, repeated 5 times, and the Ar gas flow rate was set to 50 sccm after the cleaning was completed. Heat the tube furnace, heat up to 825℃, hold for 10 minutes, when the sulfur powder reaches the sublimation temperature, it...

Example Embodiment

[0037] Example 3

[0038] (1) SiO 2 / Si substrate preparation of tungsten disulfide

[0039] Take WO 3 (0.05g) powder and S (0.2g) powder as precursors, first cut the 1cm*2cm SiO 2 / Si substrate was ultrasonically cleaned in acetone and isopropanol solution for 10min with N 2 Blow dry and put a certain amount of WO 3 Powder is placed in the ceramic boat, the SiO 2 The / Si substrate is inverted on the ceramic boat and placed in the high temperature zone of the tube furnace. The quartz boat filled with sulfur powder is placed in the low temperature zone of the tube furnace so that the distance between the two is 36cm. The pressure in the quartz tube is reduced by a vacuum pump. After pumping to 0.1pa, argon gas of 500 sccm was passed into the quartz tube for cleaning. Repeat 6 times. After the flushing, the flow of Ar gas was set to 60 sccm. Heat the tube furnace, heat up to 850℃, hold for 15 minutes, when the sulfur powder reaches the sublimation temperature, it begins to sublime in...

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Abstract

The invention discloses a preparation method for a MoS2/WS2 vertical heterojunction. The preparation method comprises the following steps that WO3 and powdered sulfur are used as precursors, large-size high-quality single-layer tungsten disulfide is prepared on a SiO2/Si substrate, a multivalent molybdenum oxide foil (MoOx) is prepared by using an electrochemical anodic oxidation method of Mo foil, and under the conditions of low pressure and low temperature, molybdenum disulfide grows on the surface of the tungsten disulfide by using the molybdenum oxide foil and the powdered sulfur as the precursors, so that the MoS2/WS2 vertical heterojunction is prepared. The method is high in controllability and repeatability and has great significance in preparation of other transition metal sulfideheterojunctions.

Description

technical field [0001] The present invention relates to a kind of MoS 2 / WS 2 Fabrication method of vertical heterojunction. Background technique [0002] MoS 2 / WS 2 As an important class of two-dimensional material heterojunctions, with tunable bandgap and optoelectronic properties, it has potential application prospects in the next generation of high-performance optoelectronic devices, MoS 2 / WS 2 The preparation methods of heterojunction mainly include mechanical exfoliation method and CVD method. Mechanical exfoliation method can obtain high-quality single-layer two-dimensional materials, but its layer number and area are difficult to control, and defects and impurities are easily introduced during the transfer process. CVD The method has less restrictions on the substrate, the method is simple, and the obtained material is of high quality, but MoS 2 / WS 2 The controllable growth technology of heterojunction still faces many challenges. [0003] CN201811446332.7...

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Application Information

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IPC IPC(8): C23C16/30C23C16/44C25D11/26
CPCC23C16/305C23C16/44C25D11/26
Inventor 曹阳宋维英
Owner XIAMEN UNIV
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