Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A paste based on multi-dimensional metal nanomaterials and its interconnection process

A metal nano and two-dimensional nano technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, to achieve the effect of regulating mildness, improving shear strength, and realizing low-temperature sintering interconnection

Active Publication Date: 2021-09-03
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to promote the interconnection during sintering, a certain sintering pressure is still required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A paste based on multi-dimensional metal nanomaterials and its interconnection process
  • A paste based on multi-dimensional metal nanomaterials and its interconnection process
  • A paste based on multi-dimensional metal nanomaterials and its interconnection process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In a preferred embodiment of the present invention 1, the following steps are adopted to realize packaging and interconnection process:

[0033] 1. Preparation of multi-dimensional metal nano-interconnection materials

[0034] Use dry etching to form a number of holes with a diameter of 10nm on the surface of nano-silver wires and nano-silver sheets. Add nano-silver particles, etched nano-silver wires, etched nano-silver sheets, and hexanoic acid to the ethylene glycol solvent. 1. Phenolic resin, the mass ratio of which is 0.5:1:0.05:0.1, wherein the solid content of metal nanomaterials is about 80%, kept stirring at a constant speed for 300min, and concentrated by low-pressure rotary evaporation to obtain a uniformly dispersed paste.

[0035] 2. Fabrication of Interconnect Devices

[0036] Print the above paste interconnect material on the copper-plated substrate by screen printing, slowly cover the copper-plated chip on the surface of the interconnect paste, place th...

Embodiment 2

[0038] In a preferred embodiment of the present invention 2, the following steps are adopted to realize the package interconnection process:

[0039] 1. Preparation of multi-dimensional metal nano-interconnection materials

[0040] Use dry etching to form a number of holes with a diameter of 40nm on the surface of nano-silver wires and nano-silver sheets. Add nano-silver particles, etched nano-silver wires, etched nano-silver sheets, and hexanoic acid to the ethylene glycol solvent. 1. Phenolic resin, the mass ratio of which is 0.5:1:0.05:0.1, wherein the solid content of metal nanomaterials is about 80%, kept stirring at a constant speed for 300min and concentrated by low-pressure rotary evaporation to obtain a uniformly dispersed paste.

[0041] 2. Fabrication of Interconnect Devices

[0042] Print the above paste interconnection material on the copper-plated substrate by screen printing, slowly cover the copper-plated chip on the surface of the interconnection paste, sinte...

Embodiment 3

[0044] In a preferred embodiment of the present invention 3, the following steps are adopted to realize the package interconnection process:

[0045] 1. Preparation of multi-dimensional metal nano-interconnection materials

[0046] Use dry etching to form a number of holes with a diameter of 10nm on the surface of nano-silver wires and nano-copper sheets. Add nano-copper particles, etched nano-silver wires, etched nano-copper sheets, and o-phthalic acid to the ethylene glycol solvent. Diacid and polyvinyl butyral resin, the mass ratio of which is 0.2:0.8:0.01:0.05, ultrasonically oscillated for 60 minutes and concentrated by low-pressure rotary evaporation to obtain a uniformly dispersed paste, wherein the solid content of metal nanomaterials is 80%.

[0047] 2. Fabrication of Interconnect Devices

[0048] The above paste interconnect material was printed on the copper-plated substrate by screen printing, the copper-plated chip was slowly covered on the surface of the interco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a multi-dimensional metal nanomaterial paste and an interconnection process thereof. The multi-dimensional metal nanomaterial paste includes: zero-dimensional nanospheres, one-dimensional nanowires and / or two-dimensional nanosheets; the one-dimensional nanometer The surface of the wire and the two-dimensional nanosheet is provided with holes, and the diameter of the holes ranges from 10 nm to 40 nm. The interconnection process of the multi-dimensional metal nanomaterial provided by the present invention has the advantages of simple process and gentle adjustment, and can realize the interconnection between chips and substrates in high-power devices under low temperature and no pressure. The introduction of several nano-metals of different dimensions in the paste and the appearance of related etching holes are beneficial to atomic diffusion and dense interconnection between particles during sintering, which improves the shear strength of the sintered paste and can reduce the sintering. temperature to achieve low temperature sintered interconnects. The interconnection process based on the method of the present invention can be widely used in many emerging microelectronic interconnection fields such as flexible electronic packaging, third-generation semiconductor chip device packaging and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip interconnection materials, in particular to a paste based on multidimensional metal nanomaterials and an interconnection process thereof. Background technique [0002] The use of lead alloy solders in electronic products raises health, environmental and safety concerns worldwide. Therefore, it becomes more urgent to develop environment-friendly packaging and interconnection technology in the near future. Nanoscale diffusion has lower interconnection temperature and higher diffusion rate than traditional soldering or bonding, so the use of metal nanomaterials for lead-free electronic packaging and flexible electronic interconnection has significant advantages. Some studies using metallic gold, silver, and copper nanomaterials to sinter and combine with the substrate to form a 3D packaging interconnection network that can withstand higher working strength to achieve lead-free packaging h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/22H01B13/00H01L21/768B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01B1/22H01B13/00H01L21/76895
Inventor 唐宏浩张卫红黄显机叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com