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A kind of magnetic nanochip absorber and preparation method thereof

A magnetic nano-absorbent technology, applied in the field of microwave-absorbing materials, can solve the problems of increasing internal demagnetization field, reducing initial magnetic permeability, and deteriorating wave-absorbing performance of sheet-shaped absorbing composite materials, achieving fewer internal defects and improving microwave absorption. The effect of strong controllability of magnetic permeability and microstructure

Active Publication Date: 2021-01-01
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The magnetic film prepared by the magnetron sputtering method is easy to form a columnar crystal structure. When the thickness of the sputtered magnetic layer increases, the crystal grains increase accordingly, and the internal demagnetization field increases to reduce its initial magnetic permeability. The absorbing performance of composite materials will deteriorate

Method used

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  • A kind of magnetic nanochip absorber and preparation method thereof
  • A kind of magnetic nanochip absorber and preparation method thereof
  • A kind of magnetic nanochip absorber and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A solution with a mass ratio of PVP to absolute ethanol of 15% was prepared, and the solution was spin-coated on a glass fiber plate by a spin coater, and the thickness of the coating film was controlled to be 1 μm after drying. Magnetron sputtering was used to alternately sputter FeSiAl magnetic material layers and Si on the glass fiber plate coated with PVP film. 3 N 4 Dielectric material layer, a total of 5 magnetic layers sputtered, 6 dielectric layers, the bottom layer and the top layer are Si 3 N 4 . The sputtering current of FeSiAl target is 0.8A, the sputtering time of each layer is 120s, Si 3 N 4 The target adopts radio frequency sputtering, the sputtering power is 250W, and the sputtering time of each layer is 60s. The sputtering pressure is 0.25Pa, the flow rate of argon gas is 40 sccm, and the rotational speed of the sample stage is 20 r / min. After the sputtering is completed, place the obtained film in absolute ethanol, and set the ultrasonic power de...

Embodiment 2

[0042] A solution with a mass ratio of PVP to absolute ethanol of 15% was prepared, and the solution was spin-coated on a glass fiber plate by a spin coater, and the thickness of the coating film was controlled to be 1 μm after drying. Alternately sputtering Fe magnetic material layer and SiO on glass fiber board by magnetron sputtering 2 Dielectric material layer, a total of 6 magnetic layers sputtered, 7 dielectric layers, the bottom layer and the top layer are SiO 2 . The sputtering current of Fe target is 0.8A, the sputtering time of each layer is 60s, SiO 2 The target is radio frequency sputtering, the sputtering power is 150W, the sputtering time for each layer is 60s, the sputtering pressure is 0.25Pa, the flow rate of argon gas is 40sccm, and the rotation speed of the chassis is 20r / min. After the sputtering is completed, the obtained film is placed in absolute ethanol, and the power density is 1500W / cm 2 . After the shaking was completed, the obtained particles we...

Embodiment 3

[0045] A solution with a mass ratio of PVP to absolute ethanol of 15% was prepared, and the solution was spin-coated on a glass fiber plate by a spin coater, and the thickness of the coating film after drying was controlled to be 1.5 μm. Alternately sputtering Fe magnetic material layer and SiO on glass fiber board by magnetron sputtering 2 Dielectric material layer, the bottom layer and the top layer are SiO 2 . The sputtering current of Fe target is 0.8A, the sputtering time of each layer is 60s, SiO 2 The target adopts radio frequency sputtering, the sputtering power is 150W, and the sputtering time of each layer is 60s. A total of 20 magnetic layers and 21 dielectric layers are sputtered. The sputtering pressure is 0.25 Pa, the argon gas flow rate is 40 sccm, and the rotation speed of the chassis is 20 r / min. After the sputtering is completed, the obtained film is placed in absolute ethanol, and the power density is 500W / cm 2 . After the shaking was completed, the obt...

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Abstract

The invention relates to the technical field of wave-absorbing materials, in particular to a magnetic wave-absorbing agent and a preparation method thereof. The preparation method is to use the vacuum coating method to alternately deposit a certain thickness of magnetic material and dielectric material on a substrate uniformly coated with a sacrificial layer to obtain a multilayer film, then remove the sacrificial layer to obtain a multilayer magnetic film, and then crush the multilayer magnetic film to obtain a magnetic film. Nanosheet-like absorbent. The preparation process is simple and easy to adjust, and the prepared magnetic nanochip absorbent has smooth surface, few internal defects, small stress, controllable magnetic composition, multilayer structure, large aspect ratio and good surface insulation. It can break through the magnetic permeability bottleneck of the magnetic nanocrystalline absorbent prepared by the existing ball milling method due to rough surface, large internal defects and stress, poor microstructure control ability, and limited width-to-thickness ratio. The microwave permeability of magnetic absorbers and suppresses their permittivity.

Description

technical field [0001] The invention relates to the technical field of wave-absorbing materials, in particular to a magnetic wave-absorbing agent and a preparation method thereof. Background technique [0002] Absorbing material is an important dual-use material for both military and civilian use. It has extensive and important applications in the fields of radar stealth of weapons and equipment, electromagnetic compatibility of civilian equipment, and prevention and control of electromagnetic pollution. In most scenarios, absorbing materials are required to have as small a thickness as possible and wider and stronger absorption performance, which is also the focus and difficulty in the field of absorbing materials at present. Under the condition of small thickness, the key to improving the absorbing performance is to increase the magnetic permeability and magnetic loss, so this is the core goal of the present invention. Proper selection of absorbent components is a prerequ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/10C23C14/18C23C14/20C23C14/35C23C14/30C23C14/32C23C14/08B02C19/18H05K9/00H01Q17/00
CPCB02C19/18C23C14/0005C23C14/0652C23C14/08C23C14/10C23C14/185C23C14/205C23C14/30C23C14/32C23C14/352H01Q17/00H05K9/0081
Inventor 李维鲍禹官建国刘星陈志宏
Owner WUHAN UNIV OF TECH
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