Texturing additive for monocrystalline silicon surface treatment, texturing agent and monocrystalline silicon surface texturing method

A surface treatment, single crystal silicon technology, applied in the direction of post treatment, single crystal growth, single crystal growth, etc., can solve the problems of strong solution corrosion and poor suede formation, so as to achieve one-sided cleanliness and controllable suede size. , the effect of high cashmere rate

Active Publication Date: 2020-08-04
杭州聚力氢能科技有限公司
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the invention patent with the Chinese patent application number CN201610738890.5 includes alkaline solution and monocrystalline silicon wafer texturing additive, and the mass ratio of texturing additive to alkaline solution is 0.2 to 5:100, but when the concentration of the alkaline solution exceeds a certain Boundary, the corrosion strength of the solution is too strong, the suede formation will be worse, and even the effect similar to "polishing" will appear

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Texturing additive for monocrystalline silicon surface treatment, texturing agent and monocrystalline silicon surface texturing method
  • Texturing additive for monocrystalline silicon surface treatment, texturing agent and monocrystalline silicon surface texturing method
  • Texturing additive for monocrystalline silicon surface treatment, texturing agent and monocrystalline silicon surface texturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The texturizing additive for the surface treatment of monocrystalline silicon is made up of the following percentages by weight: sodium lignosulfonate 0.05%, polynaphthalene sodium sulfonate 0.0001%, polyethylene glycol 1.3%, diethylene glycol butyl ether 3.5%, Potassium perfluorohexylsulfonate 1.5%, sodium diethyloctanoate 0.26%, and the balance is water.

[0032] Add the above-mentioned texturizing additive to 1.5% sodium hydroxide or potassium hydroxide solution, and mix evenly at a temperature of 20°C, wherein the mass ratio of the texturizing additive to the alkali solution is 1:100 to obtain a single crystal silicon surface treatment The velvet used.

[0033] The method for making texture on the surface of monocrystalline silicon comprises the following steps:

[0034] Step 1: Pre-treat the monocrystalline silicon wafer. The pretreatment process is as follows: the first step, put the monocrystalline silicon wafer in absolute ethanol for 8 minutes, and clean it wi...

Embodiment 2

[0037] In Example 2, the surface texturing temperature of the monocrystalline silicon is 78° C., the texturing time is 300 s, and other parameters are the same as those in Example 1.

Embodiment 3

[0039] In Example 3, the surface texturing temperature of monocrystalline silicon is 78° C., the texturing time is 600 s, and other parameters are the same as those in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of monocrystalline silicon wafer texturing agents. The invention discloses a texturing additive for monocrystalline silicon surface treatment. The texturing additive is prepared from the following components in percentage by weight: 0.01 to 1.0 percent of sodium lignin sulfonate, 0.0001 to 0.01 percent of sodium polynaphthaldehyde sulfonate, 0.2 to 4 percent of polyethylene glycol, 1.5 to 5 percent of diethylene glycol butyl ether, 1.5 to 2.5 percent of potassium perfluorohexylsulfonate, 0.1 to 5 percent of sodium diethylcaprylate and 82 to 96 percent of water. The invention further discloses a texturing agent for monocrystalline silicon surface treatment, the texturing additive is added into a 1%-2% sodium hydroxide or potassium hydroxide solution, the mixture is mixed to be uniform at the temperature of 20-80 DEG C, and the mass ratio of the texturing additive to the alkaline solution is (1-5): 100. The invention also discloses the monocrystalline silicon surface texturing method. The method comprises the following steps: a monocrystalline silicon wafer is pretreated; and the pretreated monocrystalline silicon wafer is immersed in thetexturing agent for texturing, the texturing temperature is 70-90 DEG C, and the texturing time is 300-1200 s. The monocrystalline silicon surface treated by the texturing additive and the texturing agent achieves a good texturing effect, the textured surface size is controllable, the texturing rate is high, the reflectivity is low, one side is clean, and the service life of the texturing agent islong.

Description

technical field [0001] The invention relates to the technical field of texturing agents for monocrystalline silicon wafers, in particular to a texturing additive for surface treatment of monocrystalline silicon, a texturing agent and a method for texturing the surface of monocrystalline silicon. Background technique [0002] In the preparation process of monocrystalline silicon solar energy, in order to improve the photoelectric conversion efficiency of monocrystalline silicon solar cells, the difference in the corrosion rate of each crystal surface by alkaline solution is often used to form a "pyramid"-like suede on the surface of the silicon wafer. It can effectively enhance the absorption of incident light by the silicon wafer and increase the photogenerated current density. [0003] The ideal quality of suede should be that the size of the pyramids is uniform, and there is no gap between adjacent pyramids, which can not only obtain low surface reflectivity, but also faci...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/0236H01L31/0747H01L31/20
CPCC30B29/06C30B33/10H01L31/02363H01L31/0747H01L31/202Y02E10/50Y02P70/50
Inventor 李然范云堂程寒松闫缓
Owner 杭州聚力氢能科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products