Texturing and cleaning method and heterojunction battery
A technology for making texture and silicon wafers, which is applied in the fields of circuits, photovoltaic power generation, electrical components, etc. It can solve the problems of poor quality of texture and achieve the effect of high cost, low cost of chemicals, and large amount of use
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[0043] Then the silicon wafer is oxidatively cleaned, the silicon wafer is soaked in an oxidative cleaning solution, and the cleaning solution reacts with the surface of the silicon wafer to form a uniform oxide layer of about 10 angstroms on the surface of the silicon wafer again. Specifically, there are two implementations for oxidative cleaning of silicon wafers. The first implementation includes: oxidative cleaning of silicon wafers with a mixed solution containing ozone and hydrochloric acid, and the concentration of ozone in the mixed solution containing ozone and hydrochloric acid The concentration of hydrochloric acid is 10PPM-20PPM, the concentration of hydrochloric acid is 0.01%-0.5%, the balance is deionized water, the temperature of the mixed solution is room temperature, and the reaction time is 90s-180s.
[0044] The second embodiment includes: using a mixed solution containing potassium hydroxide and hydrogen peroxide to oxidatively clean the silicon wafer. The c...
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