Porous silicon carbide ceramic and low-temperature preparation method
A technology of porous silicon carbide and ceramics, applied in the field of ceramic materials, can solve the problems of low porosity, poor bending strength and increased cost of porous silicon carbide ceramics, and achieve the effects of high porosity, good bending strength and energy saving.
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[0035] The second aspect of the present invention provides the above-mentioned low-temperature preparation method of porous silicon carbide ceramics, and the low-temperature preparation method includes the following steps:
[0036] (1) Ball milling and mixing the mixed solution composed of silicon carbide, sintering aids, additives, dispersant, binder and deionized water to obtain silicon carbide slurry;
[0037] (2) The silicon carbide slurry and the pore former are stirred and mixed and then sprayed and granulated, and then subjected to dry pressing under 80-150 MPa to obtain a silicon carbide green body;
[0038] (3) Sintering the silicon carbide blank in an argon atmosphere to obtain porous silicon carbide ceramics.
[0039] In a preferred case, in step (1), the ball milling time is 1-2h.
[0040] In a preferred case, in step (2), the spray granulation conditions are: the feed rate is 2-3 kg / h, the inlet air temperature is 210-250°C, and the outlet air temperature is 100-110°C.
[00...
Embodiment 1
[0048] (1) Mixing 82 parts by weight of silicon carbide, 3 parts by weight of potassium oxide, 5.6 parts by weight of calcium oxide, 1.4 parts by weight of titanium dioxide and 5 parts by weight of polyethylene glycol, 4 parts by weight of dextrin, and 50 parts by weight of deionized water The liquid is ball-milled and mixed, and the ball-milling time is 1.5 hours to obtain silicon carbide slurry.
[0049] (2) Stir and mix the obtained silicon carbide slurry with 1 part by weight of ammonium perchlorate and 7 parts by weight of bismuth subcarbonate, and then perform spray granulation in a spray granulator, where the feed rate is 2.5 kg / h , The inlet air temperature is 230°C, the outlet air temperature is 105°C, and then dry pressing is performed at 120MPa to obtain a silicon carbide blank.
[0050] (3) Transfer the silicon carbide blank into the tube furnace, and pour argon into the furnace at a rate of 35ml / min. Under the protection of argon, first raise it to 700°C at a rate of 3...
Embodiment 2
[0052] (1) Mix 87 parts by weight of silicon carbide, 4 parts by weight of potassium oxide, 3.75 parts by weight of calcium oxide, 1.25 parts by weight of titanium dioxide, 4 parts by weight of polyethylene glycol, 5 parts by weight of dextrin, and 45 parts by weight of deionized water The solution is ball-milled and mixed for 2 hours to obtain silicon carbide slurry.
[0053] (2) Stir and mix the obtained silicon carbide slurry with 0.4 parts by weight of ammonium perchlorate and 3.6 parts by weight of bismuth subcarbonate, and then spray granulation in a spray granulator, where the feed rate is 3kg / h, The inlet air temperature is 240°C, the outlet air temperature is 110°C, and then dry pressing is performed at 140MPa to obtain a silicon carbide blank.
[0054] (3) Transfer the silicon carbide blank into a tube furnace, and pour argon into the furnace at a rate of 40ml / min. Under argon protection, first raise it to 800°C at a rate of 5°C / min and keep it for 1h. Then the temperatu...
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