Method for carrying out sputtering deposition to form piezoelectric film on flexible glass

A technology of flexible glass and piezoelectric film, which is applied in the field of electronic materials, can solve the problems of insufficient signal amplitude, limitation of high-performance flexible sensing and application, and difficulty in driving microfluidics with flexible SAW, so as to achieve large signal amplitude of the device, Improve the effect of orientation

Active Publication Date: 2020-08-28
HUNAN ZHONGDA CONSTR ENG TESTING TECH +1
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the flexible polymer substrate has a sound absorption effect, so the transmission signal (S21) of the prepared flexible SAW device is not large, only 25dB (Sci.Rep.3,2140(2013).https: / / doi.org / 10.1038 / srep02140), which limits high-performance flexible sensing and applications; in addition, because the signal amplitude is not large enough, it is difficult for flexible SAW based on polymer piezoelectric films to drive microfluidics, which limits its application in flexible on-chip laboratories

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for carrying out sputtering deposition to form piezoelectric film on flexible glass
  • Method for carrying out sputtering deposition to form piezoelectric film on flexible glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A method for sputtering and depositing a piezoelectric thin film on flexible glass, comprising the following steps:

[0040] 1) Ultra-thin flexible glass with an area of ​​2 inches was ultrasonically cleaned with acetone, then ultrasonically cleaned with deionized water twice, then ultrasonically cleaned with absolute ethanol, and then dried with nitrogen, and the cleaned flexible glass was attached to the The surface of the substrate cooling device in the vacuum chamber of the magnetron sputtering coating machine; paste the cleaned flexible ultra-thin glass on the flat substrate in the vacuum chamber of the magnetron sputtering equipment;

[0041] 2) Then evacuate until the vacuum degree of the flat substrate is 5×10 -4 Pa;

[0042] 3) Depositing ZnO on the surface of the flexible glass by atomic layer deposition, specifically feeding argon gas, adjusting the flow rate so that the argon gas pressure is 5×10 -1Pa; close the baffle plate of the substrate, turn on the D...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for carrying out sputtering deposition to form a piezoelectric film on flexible glass. The method comprises the following steps: S1, enabling the cleaned flexible glass to cling to the surface of a substrate cooling device in a vacuum cavity of a magnetron sputtering film-coating machine; S2, then vacuumizing until a vacuum degree reaches 10<-7> to 10<-3>Pa; S3, depositing a nano-scale ZnO film or AlN film on the surface of the flexible glass through an atomic layer deposition method to obtain film-coated flexible glass; S4, dynamically charging working gas which has a total pressure of 0.2 to 10Pa into the vacuum cavity; and S5, starting a magnetron sputtering source, carrying out reactive sputtering deposition to form the piezoelectric film on the film-coated flexible glass, then charging the atmosphere into the vacuum cavity of the magnetron sputtering film-coating machine, and taking out a sample. The method realizes the operation of carrying out sputtering deposition to form the piezoelectric film on the flexible glass.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a method for sputtering and depositing piezoelectric thin films on flexible glass. Background technique [0002] Piezoelectric films have a wide range of application scenarios in the field of surface acoustic wave (SAW) and bulk acoustic wave (FBAR) sensors and filters due to their piezoelectric properties. The traditional preparation of piezoelectric thin films is based on hard substrate materials, such as diamond substrates, lithium aluminate substrates, sapphire substrate silicon wafers, etc. The piezoelectric film is prepared on a hard substrate, and then the acoustic wave device is prepared, which cannot be applied to the needs of flexible electronics and curved surface monitoring. [0003] In recent years, Zhejiang University has proposed to prepare ZnO piezoelectric thin films on flexible polymer substrates, and then prepare flexible SAW devices, which have b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/455C23C16/40C23C16/34C23C14/35C23C14/08C23C14/06C23C28/04
CPCC23C14/0036C23C14/0641C23C14/086C23C14/35C23C16/34C23C16/407C23C16/45525C23C28/04
Inventor 尹小波尹堃肖斌胡泽超
Owner HUNAN ZHONGDA CONSTR ENG TESTING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap