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Silicon-based annular multi-waveband detector and manufacturing method thereof

A manufacturing method and multi-band technology, applied in the field of sensors, can solve the problems of light loss, large size, poor reliability, etc., and achieve the effects of avoiding light loss, small size, and high device integration.

Active Publication Date: 2020-09-04
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such a system requires two separate sets of photodetection and imaging equipment, which are bulky, costly, and unreliable
In the deep ultraviolet band, the transparent electrode will absorb the deep ultraviolet light, resulting in light loss

Method used

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  • Silicon-based annular multi-waveband detector and manufacturing method thereof
  • Silicon-based annular multi-waveband detector and manufacturing method thereof
  • Silicon-based annular multi-waveband detector and manufacturing method thereof

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Embodiment 1

[0036] Embodiment 1 This embodiment provides an AlGaN circular multi-band detector structure and its preparation process

[0037] The detector structure from bottom to top is the lower electrode 8, the P-silicon substrate 1, the N+ silicon layer 2 with a band gap of Eg1, the N+ nitride layer 3, and the i-nitride layer 4 with a band gap of Eg2. P+ nitride layer 5, upper electrode 6, wherein Eg2>Eg1; wherein the upper electrode 6 is located at the end of the P+ nitride layer 5, and the middle electrode 7 is located near the end of the N+ silicon layer 2 and covers part The end of the N+ nitride layer 3; the middle electrode 7 and the upper electrode 6 are ring structures. The upper electrode 6 has a width of 100 nm and a thickness of 50 nm; the middle electrode 7 has a width of 100 nm and a thickness of 50 nm. The exposed N+ nitride layer 3 is a circular or square ring structure, and the nitride is AlGaN or GaN, a group III-V nitride.

[0038] The exposed N+ nitride layer 3 ha...

Embodiment 2

[0046] Embodiment 2 This embodiment provides a preparation process for an AlGaN square ring multi-band detector

[0047] like image 3 (a) shows the structure of a square AlGaN multi-band detector on silicon. The initial weakly p-type doped p-silicon substrate 1 is selected, and the doping concentration is 10 17 cm -2 ;

[0048] Ion diffusion (downward implantation) is used to form a heavily N-type doped N+ silicon layer 2 with a thickness of about 200nm, doped with arsenic as an impurity, and a doping concentration of 10 20 cm -3 ;

[0049] Molecular beam epitaxy (MBE) is used to sequentially form an N-type doped N+AlGaN layer 3, an intrinsically undoped i-AlGaN layer 4 and a P+AlGaN layer 5 from bottom to top, wherein N+Al The gallium nitride layer 3 has a thickness of 200nm and a doping concentration of 10 20 cm -3 , the doping impurity is silicon; the thickness of the i-aluminum gallium nitride layer 4 is 600nm, the thickness of the uppermost P+aluminum gallium nitr...

Embodiment 3

[0054] Embodiment 3 This embodiment provides a preparation process of a gallium nitride circular multi-band detector

[0055] like image 3 (b) shows the selected initial weakly p-type doped p-silicon substrate 1 with a doping concentration of 10 18 cm -2 ;

[0056] A heavily N-type doped N+ silicon layer 2 is formed by ion diffusion (downward implantation), with a thickness of about 400nm, doped with antimony as impurity, and a doping concentration of 10 21 cm -3 ;

[0057] N-type doped N+ gallium nitride layer 3, intrinsically undoped i-gallium nitride layer 4 and P+ gallium nitride layer 5 are sequentially formed from bottom to top using molecular beam epitaxy (MBE), wherein N+ nitrogen The gallium chloride layer 3 has a thickness of 200nm and a doping concentration of 10 20 cm -3 , the doping impurity is silicon; the thickness of the i-gallium nitride layer 4 is 600nm, the thickness of the uppermost P+gallium nitride layer 5 is 60nm, and the doping concentration is ...

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Abstract

The invention provides a silicon-based annular multi-waveband detector and a manufacturing method thereof. The silicon-based annular multi-waveband detector sequentially comprises a lower electrode 8,a P- silicon substrate 1, an N+ silicon layer 2 with a forbidden band width of Eg1, an N+ nitride layer 3, an i- nitride layer 4, a P+ nitride layer 5 with a forbidden band width of Eg2 and an upperelectrode 6 from bottom to top, wherein the upper electrode 6 is located at the end of the P+ nitride layer 5, a middle electrode 7 is located at the position, close to the end, of the N+ silicon layer 2 and covers part of the end of the N+ nitride layer 3, and the middle electrode 7 and the upper electrode 6 are of an annular structure. According to the invention, a p-i-n junction diode is used for realizing detection of a solar blind ultraviolet band, and a p- silicon substrate and an N+ silicon substrate are used for forming a pn junction to achieve detection of a visible light band, so that the effect that a single device can detect two wavebands is realized, the size of the detector can be greatly reduced, and the manufacturing cost is reduced.

Description

technical field [0001] The invention belongs to the field of sensors, in particular to a silicon-based multi-band detector and a manufacturing method thereof. Background technique [0002] A solar-blind photodetector is a photodetector that is insensitive to infrared, visible light, and near-ultraviolet light, but responds to short-wavelength ultraviolet light with a wavelength below about 300nm. Since the sun's ultraviolet radiation at short wavelengths is strongly absorbed by the atmosphere, the short-wavelength ultraviolet content of the solar radiation reaching the earth's surface is very small. Therefore, solar-blind UV photodetectors can be used in all applications that require detection of UV light without interference from strong visible light. For example, solar-blind detectors could be used to monitor levels of ultraviolet radiation on Earth, which increases due to the depletion of the ozone layer. It can be widely used in the field of medical care and health. S...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0336H01L31/105H01L31/18
CPCH01L31/022416H01L31/0336H01L31/105H01L31/18Y02P70/50
Inventor 万景刘冉叶怀宇张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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