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Three-dimensional continuous network hydrophilic boron-doped diamond radiator and preparation method and application thereof

A continuous network and three-dimensional network technology, applied in the field of thermal management equipment, can solve the problems of insufficient hydrophilicity of diamond and affect heat dissipation efficiency, and achieve the effects of maintaining thermal conductivity, improving heat dissipation efficiency, and improving wettability

Active Publication Date: 2020-09-11
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the fact that the radiator material in the VC radiator needs to be in direct contact with the cooling liquid, and due to the lack of hydrophilicity of diamond, its excellent thermal conductivity cannot be fully exerted, thus affecting the heat dissipation efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The foamed Cu substrate (30PPI) was subjected to acetone (CH 3 COCH 3 ) ultrasonic cleaning, ethanol (C 2 h 5 OH) ultrasonic cleaning and deionized water ultrasonic cleaning for 10 min each. Then a W transition layer was sputtered on its surface by vacuum evaporation method, wherein the thickness of the W transition layer was 100nm; then the copper substrate was placed in the nano-diamond suspension and seed crystals were ultrasonically planted for 30 minutes to enhance nucleation. Finally, ultrasonically rinsed with deionized water for 10 min, and dried for later use.

[0046] (2) Then adopt chemical vapor deposition to carry out the deposition of diamond film on the foamed Cu substrate that is adsorbed with nano-diamond particles, diamond deposition process: adopt hot wire CVD to deposit three-dimensional continuous network diamond on the surface of foam substrate, used hot wire is The straight tungsten wire is used to completely cover the straight wire directly ...

Embodiment 2

[0050] (1) The foamed Cu substrate (50PPI) was subjected to acetone (CH 3 COCH 3 ) ultrasonic cleaning, ethanol (C 2 h 5 OH) ultrasonic cleaning and deionized water ultrasonic cleaning for 10 min each. Then magnetron sputtering was used to sputter a Cr film on its surface, wherein the thickness of the Cr film was 100nm; then the copper substrate was placed in the nano-diamond suspension and seed crystals were planted ultrasonically for 30 minutes to enhance the nucleation. Finally, ultrasonically rinsed with deionized water for 10 min, and dried for later use.

[0051] (2) Then adopt chemical vapor deposition to carry out the deposition of diamond film on the foamed Cu substrate that is adsorbed with nano-diamond particles, the process of diamond deposition: adopt hot wire CVD to deposit three-dimensional continuous network diamond on the foam substrate surface, used hot wire is The straight tungsten wire is used to completely cover the straight wire directly above the su...

Embodiment 3

[0055] (1) The foamed Cu substrate (70PPI) was subjected to acetone (CH 3 COCH 3 ) ultrasonic cleaning, ethanol (C 2 h 5 OH) ultrasonic cleaning and deionized water ultrasonic cleaning for 10 min each. Then magnetron sputtering was used to sputter a Cr film on its surface, wherein the thickness of the Cr film was 100nm; then the copper substrate was placed in the nano-diamond suspension and seed crystals were planted ultrasonically for 30 minutes to enhance the nucleation. Finally, ultrasonically rinsed with deionized water for 10 min, and dried for later use.

[0056] (2) The hot wire used in this paper is The straight tungsten wire is used to completely cover the straight wire directly above the substrate, and then the pretreated substrate is put into the cavity of the HFCVD equipment, and the distance between the hot wire and the substrate is adjusted (8mm). After the installation is completed, close the hatch to vacuumize, and then pass in hydrogen and methane accordi...

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Abstract

The invention discloses a three-dimensional continuous network hydrophilic boron-doped diamond radiator and a preparation method and application thereof. The hydrophilic boron-doped diamond radiator comprises a three-dimensional continuous network metal framework, a diamond layer and a boron-doped diamond layer, the diamond layer is arranged on the surface of the three-dimensional continuous network metal framework, the boron-doped diamond layer is arranged on the surface of the diamond layer, the boron content in the boron-doped diamond layer is gradually increased from bottom to top, and micropores and / or pointed cones are distributed on the surface of the boron-doped diamond layer. According to the three-dimensional continuous network hydrophilic boron-doped diamond radiator and the preparation method and application thereof, the diamond film layer with excellent heat conduction performance is prepared on the surface of the three-dimensional continuous network metal framework firstly, then the boron-doped diamond layer with function modification performance is arranged on the surface of the diamond film layer, gradient setting is carried out during boron doping, trace boron doping is adopted for the bottom layer making contact with the diamond layer, purity is kept, and heat conductivity is guaranteed, then the boron doping concentration is gradually increased, so that the top layer adopts the relatively high boron content, and high-temperature heat treatment is used in combination to obtain excellent hydrophilicity.

Description

technical field [0001] The invention discloses a three-dimensional continuous network hydrophilic boron-doped diamond radiator and a preparation method and application thereof, belonging to the technical field of thermal management equipment. Background technique [0002] With the advent of the 5G era, the miniaturization, intelligence, and weight reduction of electronic equipment have led to an increase in the integration of electronic and semiconductor devices, and the heat density of electronic devices has increased rapidly. If the heat generated by electronic devices cannot be dissipated in a timely and effective manner, the temperature of the entire electronic device will rise, or even burn out. Therefore, thermal management of high heat density in a small space has become an urgent problem to be solved in current high-performance electronic equipment; VC radiator, which has a better temperature uniformity effect than metal or heat pipes. Can make the surface temperatu...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/02C23C16/56
CPCC23C16/0272C23C16/27C23C16/277C23C16/278C23C16/56
Inventor 魏秋平马莉周科朝于杨磊李崧博
Owner CENT SOUTH UNIV
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