Gas sensor based on temperature compensation structure

A technology of gas sensor and temperature compensation, which is applied in the direction of microstructure technology, microstructure device, and manufacturing microstructure device, etc. MEMS gas sensor gas sensing characteristics and other issues, to achieve good temperature distribution uniformity, good temperature distribution uniformity, low power consumption effect

Active Publication Date: 2020-09-22
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the temperature distribution of MEMS micro-hotplates in traditional MEMS gas sensors, especially large-scale MEMS micro-hotplates, is not uniform. There are large differenc

Method used

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  • Gas sensor based on temperature compensation structure
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  • Gas sensor based on temperature compensation structure

Examples

Experimental program
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Embodiment 1

[0070] Embodiment 1: The thickness h of p-type (100) silicon wafers is made to be 200 μm, the number of circles m of the temperature compensation structure heating electrode is 3, and the third circle of electrodes E 3 Thickness D 3 0.2μm, the second circle electrode E 2 Thickness D 2 0.6μm, the first ring electrode E 1 Thickness D 1 A gas sensor based on a temperature-compensated structure of 1 μm.

[0071] Step 1, making the lower insulating layer on the silicon substrate, such as Figure 10 a.

[0072] A layer of thickness t is grown on a silicon substrate by thermal oxidation d 1µm SiO 2 The insulating medium forms the lower insulating layer.

[0073] Step 2, making a temperature compensation structure heating electrode and lower electrode plate on the lower insulating layer, such as Figure 10 b.

[0074] 2a) Make a mask on the lower insulating layer for the first time, using electron beam evaporation technology, that is, when the degree of vacuum is less than 1...

Embodiment 2

[0102] Embodiment 2: The thickness h of p-type (100) silicon wafers is made to be 300 μm, the number of turns m of the temperature compensation structure heating electrode is 4, and the fourth turn electrode E 4 Thickness D 4 0.5μm, the third ring electrode E 3 Thickness D 3 0.8μm, the second circle electrode E 2 Thickness D 2 1.1μm, the first ring electrode E 1 Thickness D 1 A gas sensor based on a temperature-compensated structure of 1.4 μm.

[0103] Step 1, making a lower insulating layer on the silicon substrate, such as Figure 10 a.

[0104] A layer of thickness t is grown on a silicon substrate by thermal oxidation d 2µm SiO 2 The insulating medium forms the lower insulating layer.

[0105] Step 2, making a temperature compensation structure heating electrode and lower electrode plate on the lower insulating layer, such as Figure 10 b.

[0106] 2.1) Make a mask on the lower insulating layer for the first time, and use electron beam evaporation technology to...

Embodiment 3

[0144] Embodiment 3: The thickness h of p-type (100) silicon wafers is made to be 500 μm, the number of turns m of the temperature compensation structure heating electrode is 5, and the fifth circle electrode E 5 Thickness D 5 1.2μm, the fourth ring electrode E 4 Thickness D 4 1.4μm, the third ring electrode E 3 Thickness D 3 1.6μm, the second circle electrode E 2 Thickness D 2 1.8μm, the first ring electrode E 1 Thickness D 1 A gas sensor based on a temperature-compensated structure of 2 μm.

[0145] Step A, making a lower insulating layer on the silicon substrate, such as Figure 10 a.

[0146] A layer thickness t is grown on the silicon substrate by thermal oxidation d 5µm SiO 2 The insulating medium forms the lower insulating layer.

[0147] Step B, making a temperature compensation structure heating electrode and lower electrode plate on the lower insulating layer, such as Figure 10 b.

[0148] First, make a mask on the lower insulating layer for the first ...

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Abstract

The invention discloses a gas sensor based on a temperature compensation structure. The problem that an existing gas sensor is uneven in temperature distribution is mainly solved. The gas sensor comprises a silicon substrate (1), a lower insulating layer (2), a temperature compensation structure heating electrode (3), an upper electrode plate (9), a lower electrode plate (4), an upper insulating layer (5), a covering layer (6), a protective layer (7), a test electrode (8), a test electrode plate (10), a heating platform (15), a cantilever (16) and a gas sensitive film (17), wherein an air heatinsulation groove (11) is formed in the silicon substrate through corrosion, a through hole array (12) and an air heat insulation layer (13) are arranged in the middle of the covering layer, a contact hole (14) is formed between the lower electrode plate and the upper electrode plate, and the heating electrode of the temperature compensation structure is composed of m circles of electrodes of which the thicknesses are gradually reduced from inside to outside. The gas sensor is uniform in temperature distribution and low in power consumption, and can be used for monitoring chemical gas in thefields of chemical production and safe home furnishing.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a gas sensor, which can be used to detect chemical gases and ensure production safety. [0002] technical background [0003] At present, MEMS gas sensors play an extremely important role in the fields of artificial intelligence, Internet of Things, air quality monitoring, chemical production, and safe home due to their many advantages such as high sensitivity, low power consumption, small size, and easy integration. MEMS gas sensors are usually composed of two parts: a MEMS micro-hot plate and a gas-sensitive membrane. The MEMS micro-hot plate plays a vital role in providing a stable and constant operating temperature to ensure that the gas-sensitive membrane can accurately detect For the change of measured gas concentration, see Zhao Ruru, MEMS Integrated Formaldehyde Sensor Design and Performance Testing Research, Harbin University of Science and Tec...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00G01N27/12
CPCB81B7/02B81C1/00023B81C1/00206B81C1/00349B81C1/0069G01N27/125G01N27/128B81B2201/0292
Inventor 杨翠毛维艾治州史芝纲王晓飞
Owner XIDIAN UNIV
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