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Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same

An aluminum oxide layer, aluminum oxide technology, applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, nitrogen oxides/oxyacids, etc., can solve problems such as corrosion of aluminum oxide, and achieve the effect of inhibiting corrosion

Pending Publication Date: 2020-09-22
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] As mentioned above, aluminum oxide is sometimes used in the semiconductor integrated circuit and its manufacturing process, and when the cleaning liquid containing fluorine compound, oxidizing agent, alkali, etc. generally used in the cleaning process comes into liquid contact with aluminum oxide, severe corrosion occurs. The Aluminum Oxide Problem

Method used

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  • Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same
  • Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same
  • Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same

Examples

Experimental program
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preparation example Construction

[0053] (Preparation method of alumina protective solution)

[0054] The alumina protective solution of the present invention can be prepared by adding water (preferably ultrapure water) to an alkaline earth metal compound and other components as needed, and stirring until uniform.

[0055] It should be noted that the alumina protection solution of the present invention preferably does not substantially contain hydrogen peroxide, and more preferably the concentration (content) of hydrogen peroxide in the alumina protection solution is less than 0.002% by mass.

[0056] (How to use alumina protection solution)

[0057] The use temperature of the alumina protection solution of the present invention is usually 20-70°C, preferably 30-60°C, particularly preferably 40-55°C. The usage conditions of the alumina protection solution may be appropriately selected according to the semiconductor substrate to be used.

[0058] The use time of the alumina protection solution of the present ...

Embodiment 1～13 and comparative example 1～7

[0092] In Examples 1 to 13 and Comparative Example 1, the wafer with the aluminum oxide film was immersed in the protective solution described in Table 1 at 50°C for 1 minute, then immersed in the cleaning solution at 50°C for 0.5 minutes, and thereafter, used Rinse with ultrapure water and dry with a dry nitrogen jet.

[0093] E.R. was calculated by dividing the film thickness difference of the aluminum oxide film-attached wafer before and after the treatment by the immersion time of the cleaning solution.

[0094] In Comparative Examples 2 to 7, the immersion treatment by the protective solution was omitted, and the samples were immersed in the cleaning solution at 50° C. for 0.5 minutes, rinsed with ultrapure water, and dried with a dry nitrogen gas jet. E.R. was calculated in the same manner as above.

[0095] Compared with Comparative Examples 2 to 7, it can be seen that in Examples 1 to 13, the corrosion of alumina by the cleaning solution can be suppressed by applying ...

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Abstract

The present invention pertains to a protective fluid for alumina, a protection method, and a production method for semiconductor substrate having an alumina layer using same. This alumina protective fluid is characterized by: containing 0.0001%-20% by mass of an alkali earth metal compound; and the alkali earth metal compound being at least one selected from the group consisting of beryllium, magnesium, strontium, and barium. As a result of the present invention, alumina corrosion can be suppressed during the production process for semiconductor circuits.

Description

technical field [0001] The present invention relates to a protective solution for inhibiting corrosion of aluminum oxide in the manufacturing process of semiconductor integrated circuits, a method for protecting aluminum oxide, and a method for manufacturing a semiconductor substrate having an aluminum oxide layer using the same. Background technique [0002] In the cleaning step using a cleaning solution for semiconductor integrated circuits, dry etching residues, resists, hard masks, and the like are removed. Generally speaking, in this cleaning step, it is required not to corrode materials other than those to be removed. [0003] In recent years, with the miniaturization of design rules, the gate configuration of transistors has gradually changed from a combination of silicon oxide and polysilicon to a combination of high dielectric constant materials and metals. Alumina is sometimes used as the high dielectric constant material. [0004] In addition, when forming a via...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316C01F7/021
CPCH01L21/0206H01L21/02172H01L21/02282C09K15/02C01B21/38H01L21/3065H01L21/02178C01F7/021H01L21/28158C09D7/40C01B21/20H01L21/0332B05D5/00C09D5/08H01L21/02057H01L21/76829C09D1/00
Inventor 尾家俊行普林安加·柏达那·普特拉堀田明伸
Owner MITSUBISHI GAS CHEM CO INC
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