A gallium oxide solar-blind photodetector and its preparation method

Abstract

The disclosure provides a gallium oxide solar-blind photodetector, comprising: a substrate (100); multilayer gallium oxide (200), and the multilayer gallium oxide (200) is stacked on the surface of the substrate (100); gallium oxide A nanometer-thick electrode layer (300) is arranged between the (200) and the substrate (100), and between two layers of gallium oxide (200). The electrode layers (300) with an odd nanometer thickness are embedded in the gallium oxide and extend to the outside of the gallium oxide and overlap each other; while the electrode layers (300) with an even number of nanometer thickness are embedded in the gallium oxide, extend to the other side of the gallium oxide and overlap each other. On the other hand, the present disclosure also provides a preparation method of gallium oxide solar-blind photodetector.

Description

technical field [0001] The present disclosure relates to the technical field of photoelectric detection, in particular to a solar-blind gallium oxide photodetector and a preparation method thereof. Background technique [0002] Photodetectors are a class of optoelectronic devices that convert light signals into electrical signals. The solar-blind band refers to the ultraviolet light with a wavelength range of 200-280nm. The solar-blind photodetector has the outstanding advantage of small background interference, and has broad applications in the fields of missile early warning, fire remote sensing, high-voltage electricity monitoring, and non-line-of-sight confidential optical communication. Application prospects. Solar-blind photodetectors mainly include outer photoelectric effect detectors and inner photoelectric effect detectors. The external photoelectric effect detector is based on the principle that electrons in the material can obtain enough energy after absorbing a...

AI Technical Summary

Problems solved by technology

There are certain defects in these structures, which lead to the common problems of low response sensitivity, large dark current, slow response and falling speed in gallium oxide solar-blind photodetectors, and poor practicability.

For example, opaque metal electrodes block the incident light, which prevents the complete absorption of incident light by gallium oxide; the carrier mobility of gallium oxide is not high, which limits the response speed of the device; gallium oxide is currently unable to achieve controllable P type doping, which results in GaO-based devices lacking a simple means of building a built-in electric field through a PN structure

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