Method for increasing roughness on semiconductor surface

Abstract

The invention provides a method for increasing roughness on a semiconductor surface. The method comprises the following steps: providing a semiconductor and shielding a part, except for a to-be-increased roughness region, of the semiconductor surface by using photoresist; and loading the processed semiconductor into a semiconductor processing chamber, forming a vacuum in the processing chamber, introducing a mixed gas of an inert gas and a hydrocarbon gas into the processing chamber, and ionizing the mixed gas to form an ion beam for etching, wherein the inert gas is argon, the hydrocarbon gasis ethylene, and the volume ratio of argon in the mixed gas is 85%-95%. According to the method, the area outside the area, where roughness needs to be increased, of the surface of the semiconductoris shielded through the photoresist, ion beams are formed under the vacuum condition for etching to increase the roughness of the surface of the semiconductor, and the method is simple and low in cost; and in the mixed gas forming the ion beam, ethylene plays a role in dilution, thereby facilitating reducing the etching speed so as to avoid forming excessive etching.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a method for increasing roughness on a semiconductor surface. Background technique [0002] In microelectronics, some operations require the bonding surface to be as smooth as possible, but some components need to manufacture surfaces that face each other but do not adhere to each other, so as to prevent the semiconductor from being unsmooth on the corresponding object surface. Properly bonded and able to maintain its gliding properties. [0003] Conventional methods of roughening surfaces are usually carried out by means of such ion bombardment, also known as ion beam milling. During the etching process, there is almost no chemical reaction between the ion beam and the semiconductor surface material, but a kind of momentum transfer (momentum transfer). Although this traditional etching method can form a rough surface on the semiconductor surface, yet, because this ion e...

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Problems solved by technology

Although this traditional etching method can form a rough surface on the semiconductor surface, yet, because this ion etching is mainly a physical process, and in the physical etching process, the above-mentioned ionized processing gases (argon, oxygen) have a negative effect on aluminum oxide and carbonization. The difference in the etching rate of titanium is not large, that is, the etching selectivity (alumina / titanium carbide) is small, so that other components of the semiconductor are damaged

Moreover, the roughness formed is difficult to achieve the required roughness

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