Reactive ultrasonic rectification and purification method for HF electronic gas

Abstract

The invention relates to the field of high-purity gas purification, in particular to a reactive ultrasonic rectification and purification method for HF electronic gas. According to the reactive ultrasonic rectification and purification method for the HF electronic gas, a small amount of carbonyl fluoride and thionyl chloride are added into liquefied HF containing trace water respectively, and CO2or SO2 generated by a reaction of carbonyl fluoride or thionyl chloride with water is removed through rectification, so the purpose of HF dehydration and purification is achieved; besides, the liquefied HF is placed in an ultrasonic field for rectification and purification, so the reaction of carbonyl fluoride, thionyl chloride and trace moisture in the liquefied HF can be promoted, the escape ofCO2 or SO2 from the liquefied HF is accelerated, and the residue of CO2 or SO2 in the liquefied HF is effectively reduced; and the method belongs to a reactive conversion-ultrasonic degassing coupledmethod for water, and has the advantages of high purity and extremely low water content.

Description

technical field [0001] The invention relates to the field of high-purity gas purification, in particular to a reactive ultrasonic rectification and purification method for HF electron gas. Background technique [0002] HF electron gas is an important etching and cleaning gas in the manufacture of micro-nano electronics, currently completely dependent on imports; many domestic units are also actively exploring the preparation method of high-purity electronic gas. [0003] CN201810154986.6 discloses an electronic-grade hydrofluoric acid production device, including a tank body, a bracket is evenly arranged on the outside of the bottom of the tank body, a liquid inlet is arranged on one side of the top of the tank body, and the top of the tank body is far away from A fan is arranged on one side of the liquid inlet, and a gas delivery pipe is installed at the output end of the fan, and a condensation chamber is arranged in the middle of the side of the tank away from the liquid ...

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Problems solved by technology

[0006] Moisture is one of the deadliest impurities in HF electronic gas, which causes the strong reactivity and corrosion of HF, and causes secondary pollution of HF electronic gas by impurities such as metal ions, reduces the purity and consistency of HF electronic gas, and damages the performance of semiconductor devices and yield rate; the production of advanced micro-nano electronics requires strict control of the moisture content of HF electronic gas to < 1 ppmv; the above inventions and existing patents generally use adsorbents and rectification to remove water, but due to the strong reactivity and corrosiveness of aqueous HF , Oxide adsorption materials such as activated alumina, silica, silica-alumina oxide molecular sieves, etc. can react with HF, and cannot be used to efficiently remove water from HF. Carbon-based materials such as activated carbon have limited moisture adsorption efficiency and capacity in HF ; Moreover, HF is strongly hydrophilic, and HF also has a strong hydrogen bond with water, so it is difficult to effectively remove the water in HF to the ppb level by conventional distillation

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