Etching solution and etching replenishing solution for copper/molybdenum (niobium)/IGZO film layer, and preparation methods and application of etching solution and etching replenishing solution

Abstract

The invention provides an etching solution and an etching replenishing solution for a copper / molybdenum (niobium) / IGZO film layer, and preparation methods and application of the etching solution and the etching replenishing solution. The etching solution comprises the following components of: 5-15% of hydrogen peroxide, 0.1-10% of nitric acid and / or sulfuric acid, 0.1-2% of hydrofluoric acid and / or ammonium fluoride, 1-10% of an organic acid, 1-10% of organic base, 0.08-1% of an azole metal corrosion inhibitor, 0.1-1% of phenyl urea, and the balance of water. The etching replenishing solutioncomprises the following components: 5-30% of nitric acid and / or sulfuric acid, 0.1-5% of hydrofluoric acid and / or ammonium fluoride, 5-30% of an organic acid, 5-30% of an organic base, 0.1%-2% of an azole metal corrosion inhibitor, and the balance of water. With the etching solution and the etching replenishing solution adopted, an SD / IGZO film layer has a good slope angle after being etched twice, the serioustrailing of the IGZO film layer is prevented, the number of applied photomasks is reduced, the copper loading capacity is high, and the production cost is low.

Description

technical field [0001] The invention belongs to the field of metal surface chemical treatment, and relates to an etching solution for a copper / molybdenum (niobium) / IGZO film layer, an etching replenishment solution, a preparation method and an application thereof. Background technique [0002] In recent years, metal oxide materials represented by indium gallium zinc oxide (InGaZnO, IGZO) have high electron mobility (>10cm 2 / V s), low power consumption, simple process, fast response, good large-area uniformity, high visible light transmittance, etc., it is considered to be an active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) and The core component of the active matrix liquid crystal display (AMLCD) drive circuit is also considered to be the most competitive backplane drive technology as the display develops towards large size, flexibility and lightness, and IGZO The preparation of thin-film transistors (IGZO-TFT) has good com...

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Problems solved by technology

This leads to a large amount of manpower, material and time costs in the production process of IGZO-TFT, which keeps the overall cost of panel companies high.

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