Nanometer multilayer coating, preparation method thereof and cutter with surface coated with nanometer multilayer coating
A nano-multi-layer and nano-layer technology is applied in coating, metal material coating process, sputtering plating, etc. It can solve the problems that hardness and thermal stability cannot be balanced, and cannot meet the requirements of high-speed cutting performance, etc., to achieve high Hardness, meet the performance requirements, the effect of high hardness
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[0027] The present invention provides the preparation method of nanometer multi-layer coating described in above-mentioned technical scheme, comprises the following steps:
[0028] AlCrTiZrMo high-entropy alloy targets and Cr 2 o 3 target, on the surface of the substrate alternate cycle magnetron sputtering deposits (AlCrTiZrMo) N nanolayers and Cr 2 o 3 nano layer, resulting in a nano multilayer coating.
[0029]In the present invention, the substrate is preferably pretreated before use, and the pretreatment preferably includes sequential polishing, organic solvent washing, water washing, drying and vacuum ion cleaning. In the present invention, there is no special limitation on the polishing method, and a polishing method known to those skilled in the art can be used, such as mirror polishing. In the present invention, the organic solvent washing preferably includes washing with absolute ethanol and washing with acetone in sequence. In the present invention, there is no ...
Embodiment 1
[0043] (1) Carry out mirror polishing treatment on the single crystal silicon substrate, then use absolute ethanol, acetone and deionized water in sequence to clean ultrasonically for 20 min under the condition of 30 kHz, then dry, place in a vacuum cleaning chamber, and evacuate to 6× 10 -4 After Pa, Ar was introduced as an ion source, and the vacuum degree was maintained at 4 Pa. The high-speed steel substrate washed with deionized water was bombarded with intermediate frequency ions for 30 minutes by a radio frequency power supply under the condition of 80W, and a pretreated single crystal silicon wafer substrate was obtained.
[0044] (2) Place the pretreated single crystal silicon wafer substrate in a magnetron sputtering system, and alternately use AlCrTiZrMo high-entropy alloy targets with a purity of 99.99% and a diameter of 75mm and Cr in nitrogen and an inert gas 2 o 3 Target, AlCrTiZrMo N nano-layers and Cr 2 o 3 Nano layer:
[0045] The working conditions of ma...
Embodiment 2~5
[0049] Prepare nanometer multilayer coating according to the method for embodiment 1, the preparation conditions of embodiment 1~5 are as shown in table 1:
[0050] The preparation condition of table 1 embodiment 1~5
[0051]
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