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GaN-based high-electron-mobility transistor with low ohmic contact resistance and preparation method

A high electron mobility, ohmic contact technology, applied in the field of microelectronics, can solve problems such as affecting device reliability, and achieve the effects of reducing ohmic contact resistance, high electron mobility, and avoiding reliability.

Active Publication Date: 2020-11-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large bandgap of GaN material and the unintentional doping of AlGaN / GaN HEMT epitaxial materials, it is a big problem to achieve good ohmic contact, and for high-power devices, poor ohmic contact means that a large number of non-conductive contacts will be generated. necessary heat which seriously affects the reliability of the device

Method used

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  • GaN-based high-electron-mobility transistor with low ohmic contact resistance and preparation method
  • GaN-based high-electron-mobility transistor with low ohmic contact resistance and preparation method
  • GaN-based high-electron-mobility transistor with low ohmic contact resistance and preparation method

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Embodiment 1

[0045] See figure 1 , figure 1 It is a schematic structural diagram of a GaN-based high electron mobility transistor with low ohmic contact resistance provided by an embodiment of the present invention. As shown in the figure, the GaN-based high electron mobility transistor with low ohmic contact resistance in this embodiment includes: a substrate layer 1, a Ga-polar GaN layer 2, a barrier layer 3, a source region 4, a drain region 5, a source 6. Drain 7 and gate 8 . Among them, the substrate layer 1, the Ga polar GaN layer 2 and the barrier layer 3 are stacked sequentially from bottom to top; the source region 4 is located inside the Ga polar GaN layer 2 and the barrier layer 3; the drain region 5 is located in the Ga polar GaN layer. Inside layer 2 and barrier layer 3, and set apart from source region 4; source 6 is set on the upper surface of source region 4; drain 7 is set on the upper surface of drain region 5; gate 8 is set on barrier layer 3 on the upper surface, and...

Embodiment 2

[0055] This embodiment provides a method for preparing a GaN-based high electron mobility transistor with low ohmic contact resistance, please refer to figure 2 , figure 2 It is a flowchart of a method for preparing a GaN-based high electron mobility transistor with low ohmic contact resistance provided by an embodiment of the present invention. As shown in the figure, the preparation method of this embodiment includes:

[0056] S1: Preheating the SiC substrate and sapphire, and nitriding the sapphire;

[0057] S2: Grow a Ga polar GaN layer with a thickness of 2000-2500nm on the SiC substrate by MOCVD process;

[0058] Specifically, S2 includes:

[0059] Ammonia gas with a flow rate of 2500 sccm and a gallium source with a flow rate of 150 sccm are introduced into the reaction chamber, and a Ga polar GaN layer of 2000-2500 nm is grown on the SiC substrate by MOCVD process, wherein the reaction temperature is 950 ° C and the reaction pressure is 20 Torr.

[0060] S3: Gro...

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Abstract

The invention relates to a GaN-based high-electron-mobility transistor with low ohmic contact resistance and a preparation method, and the transistor comprises a substrate layer, a Ga polar GaN layerand a barrier layer which are sequentially stacked from the bottom to the top. A source region is positioned in the Ga polar GaN layer and the barrier layer; a drain region is located in the Ga polarGaN layer and the barrier layer, and the drain region and the source region are arranged at intervals; a source electrode is arranged on the upper surface of the source region; a drain electrode is arranged on the upper surface of the drain region; a grid electrode is arranged on the upper surface of the barrier layer and located between the source electrode and the drain electrode; the material of the barrier layer is n-type AlxGa1-xN, x is greater than or equal to 0 and less than or equal to 1, and the source region and the drain region respectively comprise a nitrided sapphire layer and anN-polarity GaN layer which are sequentially stacked from bottom to top. According to the transistor, a Ga polar GaN material is adopted to realize an AlxGa1-xN / GaN heterojunction, high electron mobility is ensured, a source-drain region ohmic contact electrode is manufactured on an N polar GaN material, sound ohmic contact is realized, and ohmic contact resistance is effectively reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a GaN-based high electron mobility transistor with low ohmic contact resistance and a preparation method. Background technique [0002] High electron mobility transistor (HEMT) is a heterojunction field effect transistor, also known as selectively doped heterojunction transistor (SDHT), two-dimensional electron gas field effect transistor (2-DEGFET) and modulated doping field effect transistor (MODFET), etc. HEMT devices composed of the third-generation wide-bandgap semiconductor material GaN, with their obvious advantages in high temperature, high frequency, high power, etc., have been widely used in mobile communications, radar systems, power electronics, microwave power, aerospace and other fields. widely used. [0003] AlGaN / GaN HEMT has high output impedance, which makes it easy to match the device with the system; high operating voltage, which can red...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/08H01L29/20H01L29/778H01L21/335
CPCH01L29/0843H01L29/2003H01L29/778H01L29/66462
Inventor 许晟瑞艾立霞马德濮张雅超段小玲陈大正李培咸张进成郝跃
Owner XIDIAN UNIV