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A kind of semiconductor graphite wafer and preparation method thereof

A semiconductor and graphite technology, applied in the field of semiconductor graphite wafer and its preparation, can solve the problems of poor wear resistance and scratch resistance, improve hardness and wear resistance, simple preparation method, improve wear resistance and resistance The effect of scratch performance

Active Publication Date: 2022-04-19
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcomings of the semiconductor graphite wafer in the prior art, such as poor wear resistance and scratch resistance, and propose a semiconductor graphite wafer and its preparation method

Method used

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  • A kind of semiconductor graphite wafer and preparation method thereof

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Embodiment 1

[0034] The present invention proposes a semiconductor graphite wafer, comprising the following raw materials in parts by weight: 10 parts of graphene oxide, 20 parts of ethanol, silicon wafer, 1 part of organic silicon oil, 1 part of modified silicon aluminum carbon black, polysiloxane 5 parts, 5 parts of polytetrafluoroethylene, 1 part of silicon nitride, 2 parts of molybdenum disulfide, 1 part of polyurethane acrylate, 1 part of carbon nitride, 3 parts of acrylic resin powder;

[0035] Its preparation method comprises the following steps:

[0036] S1: Add graphene oxide to ethanol to prepare an ethanol solution with a concentration of 0.05 mg / ml;

[0037] S2: Then put silicone oil, modified silicon aluminum carbon black, polysiloxane, polytetrafluoroethylene, silicon nitride, and molybdenum disulfide into the mixing equipment for stirring and mixing. The stirring speed is 300r / min, and the stirring time is 10min, make the first mixture;

[0038] S3: adding urethane acrylat...

Embodiment 2

[0042] The present invention proposes a semiconductor graphite wafer, comprising the following raw materials in parts by weight: 15 parts of graphene oxide, 25 parts of ethanol, silicon wafer, 3 parts of organic silicon oil, 3 parts of modified silicon aluminum carbon black, polysiloxane 7 parts, 7 parts of polytetrafluoroethylene, 3 parts of silicon nitride, 5 parts of molybdenum disulfide, 3 parts of polyurethane acrylate, 3 parts of carbon nitride, 6 parts of acrylic resin powder;

[0043] Its preparation method comprises the following steps:

[0044] S1: Add graphene oxide to ethanol to prepare an ethanol solution with a concentration of 5 mg / ml;

[0045] S2: Then put silicone oil, modified silicon aluminum carbon black, polysiloxane, polytetrafluoroethylene, silicon nitride, and molybdenum disulfide into the mixing equipment for stirring and mixing. The stirring speed is 350r / min, and the stirring time is 12min, make the first mixture;

[0046] S3: adding urethane acrylat...

Embodiment 3

[0050] The present invention proposes a semiconductor graphite wafer, comprising the following raw materials in parts by weight: 20 parts of graphene oxide, 30 parts of ethanol, silicon wafer, 5 parts of organic silicon oil, 5 parts of modified silicon aluminum carbon black, polysiloxane 10 parts, 10 parts of polytetrafluoroethylene, 5 parts of silicon nitride, 7 parts of molybdenum disulfide, 5 parts of polyurethane acrylate, 5 parts of carbon nitride, 9 parts of acrylic resin powder;

[0051] Its preparation method comprises the following steps:

[0052] S1: Add graphene oxide to ethanol to prepare an ethanol solution with a concentration of 10mg / ml;

[0053] S2: Then put silicone oil, modified silicon aluminum carbon black, polysiloxane, polytetrafluoroethylene, silicon nitride, and molybdenum disulfide into the mixing equipment for stirring and mixing. The stirring speed is 500r / min, and the stirring time is 15min, make the first mixture;

[0054] S3: adding urethane acr...

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Abstract

The invention belongs to the field of graphite wafer preparation, especially a semiconductor graphite wafer and a preparation method thereof. Aiming at the problems of poor wear resistance and scratch resistance of existing semiconductor graphite wafers, the following scheme is now proposed, which includes the following Raw materials in parts by weight: 10-20 parts of graphene oxide, 20-30 parts of ethanol, silicon wafer, 1-5 parts of organic silicone oil, 1-5 parts of modified silicon aluminum carbon black, 5-10 parts of polysiloxane, 5-10 parts of polytetrafluoroethylene, 1-5 parts of silicon nitride, 2-7 parts of molybdenum disulfide, 3-8 parts of polysiloxane, 1-5 parts of polyurethane acrylate, 1-5 parts of carbon nitride, 3-9 parts of acrylic resin powder, the invention can improve wear resistance and scratch resistance, and the preparation method is simple.

Description

technical field [0001] The invention relates to the field of graphite wafer preparation, in particular to a semiconductor graphite wafer and a preparation method thereof. Background technique [0002] Wafer refers to the silicon wafer used to make silicon semiconductor integrated circuits, and its raw material is silicon. High-purity polycrystalline silicon is dissolved and mixed with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. After the silicon ingot is ground, polished, and sliced, it forms a silicon wafer, that is, a wafer. At present, domestic wafer production lines are mainly 8-inch and 12-inch. The main processing methods of wafers are sheet processing and batch processing, that is, one or more wafers are processed at the same time. As semiconductor feature sizes become smaller and processing and measurement equipment become more advanced, new data characteristics emerge in wafer processing. At the same time, the re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D183/04C09D127/18C09D175/14C09D133/04C09D7/61C09D7/62H01L21/02H01L29/06
CPCC09D183/04C09D127/18C09D7/61C09D7/62C09D5/18H01L21/02002H01L21/0201H01L29/06C08L2205/025C08L2205/035C08K2003/3009C08K2003/2227C08K2003/2272C08L2201/08C08L83/04C08L27/18C08L75/14C08L33/04C08K13/06C08K3/042C08K3/34C08K3/30C08K3/28C08K3/22C08K3/36C08K3/04
Inventor 张作文张培林武建军柴利春王志辉
Owner DATONG XINCHENG NEW MATERIAL CO LTD