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TiN nanotube array composite material modified by metal type molybdenum disulfide quantum dots and preparation method of TiN nanotube array composite material

A technology of nanotube arrays and composite materials, which is applied in the field of TiN nanotube array composite materials decorated with metal molybdenum disulfide quantum dots and its preparation, which can solve the problems of reduced electrocatalytic performance, achieve excellent performance and improve electrocatalytic performance , solve the effect of easy reunion

Inactive Publication Date: 2020-12-15
CHANGZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the existing technology MoS 2 Quantum dots are easy to agglomerate in the dispersed phase medium and reduce its electrocatalytic performance. The purpose of the present invention is to provide a TiN nanotube array composite material modified by metal molybdenum disulfide quantum dots and its process is simple and convenient. Preparation method for industrial production

Method used

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  • TiN nanotube array composite material modified by metal type molybdenum disulfide quantum dots and preparation method of TiN nanotube array composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A metallic MoS 2 The preparation method of the TiN nanotube array composite material modified by quantum dots specifically comprises the following steps:

[0028] (1) With semiconductor MoS 2 The block is used as the raw material, and the semiconductor-type MoS with a size of 6 μm is ground by manual grinding method. 2 Place the block in ethanol or isopropanol to obtain a mixed solution with a mass concentration of 100 mg / mL, then place the mixed solution in an agate mortar, grind it manually for 60 minutes, wait for the ethanol or isopropanol to evaporate, and dry it naturally , to obtain semiconducting MoS with a size of less than 1 μm 2 powder;

[0029] (2) In a glove box in an anhydrous and oxygen-free environment with a water content and an oxygen content of less than 1ppm, an inert gas (nitrogen with a purity of 99.99%) is used as a protective gas, and the molar concentration of butyllithium is 2.5mol / L Butyllithium solution on the semiconducting MoS 2 The po...

Embodiment 2

[0034] A metallic MoS 2 The preparation method of the TiN nanotube array composite material modified by quantum dots specifically comprises the following steps:

[0035] (1) With semiconductor MoS 2 The block is used as the raw material, and the semiconductor-type MoS with a size of 6 μm is ground by manual grinding method. 2 Place the block in ethanol or isopropanol to obtain a mixed solution with a mass concentration of 100 mg / mL, then place the mixed solution in an agate mortar, grind it manually for 60 minutes, wait for the ethanol or isopropanol to evaporate, and dry it naturally , to obtain semiconducting MoS with a size of less than 1 μm 2 powder;

[0036] (2) In a glove box in an anhydrous and oxygen-free environment where the water content and oxygen content are both less than 1ppm, an inert gas (argon with a purity of 99.99%) is used as a protective gas, and the molar concentration of butyllithium is 2.5mol / L The butyllithium solution on the semiconducting MoS 2...

Embodiment 3

[0041] A metallic MoS 2 The preparation method of the TiN nanotube array composite material modified by quantum dots specifically comprises the following steps:

[0042] (1) With semiconductor MoS 2 The block is used as the raw material, and the semiconductor-type MoS with a size of 6 μm is ground by manual grinding method. 2 Place the block in ethanol or isopropanol to obtain a mixed solution with a mass concentration of 100 mg / mL, then place the mixed solution in an agate mortar, grind it manually for 60 minutes, wait for the ethanol or isopropanol to evaporate, and dry it naturally , to obtain semiconducting MoS with a size of less than 1 μm 2 powder;

[0043] (2) In a glove box in an anhydrous and oxygen-free environment with a water content and an oxygen content of less than 1ppm, an inert gas (nitrogen with a purity of 99.99%) is used as a protective gas, and the molar concentration of butyllithium is 2.5mol / L Butyllithium solution on the semiconducting MoS 2 The po...

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Abstract

The invention belongs to the technical field of nano material preparation, and particularly relates to a TiN nanotube array composite material modified by metal type molybdenum disulfide quantum dotsand a preparation method of the TiN nanotube array composite material. The preparation method comprises the following steps: (1) grinding a large-size semiconductor type MoS2 block by adopting a manual grinding method to obtain semiconductor type MoS2 powder; (2) carrying out lithium intercalation treatment on the semiconductor type MoS2 powder; (3) dispersing the semiconductor type MoS2 powder subjected to lithium intercalation treatment in a solvent, and carrying out ultrasonic treatment and centrifugal separation to obtain a metal type MoS2 quantum dot solution; and (4) putting a TiN nanotube array into the metal type MoS2 quantum dot solution, and then sequentially carrying out ultrasonic treatment, soaking and drying to obtain the metal type MoS2 quantum dot modified TiN nanotube array composite material. The TiN nanotube array composite material modified by the metal type MoS2 quantum dots, disclosed by the invention, has excellent electrocatalytic performance and stability.

Description

technical field [0001] The invention belongs to the technical field of nanometer material preparation, and in particular relates to a TiN nanotube array composite material modified by metal molybdenum disulfide quantum dots and a preparation method thereof. Background technique [0002] MoS 2 With excellent physical and chemical properties, it has important application prospects in the fields of electrocatalysis and biosensing. MoS 2 The regulation of size and shape and the corresponding physical and chemical properties have become a research hotspot in materials science and related fields in recent years. on MoS 2 As far as quantum dots are concerned, because of their small size, large specific surface area, and many active sites on the exposed edges, they exhibit excellent electrocatalytic performance and can be applied to electrocatalytic hydrogen evolution reactions and high-sensitivity sensors. However, thermodynamically stable MoS 2 It is semiconductor type, and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J37/34B82Y20/00B82Y40/00
CPCB01J27/24B01J37/0036B01J37/343B82Y20/00B82Y40/00B01J35/33B01J35/40
Inventor 王玮康琪刘天宇汪敏柏寄荣邓瑶瑶许鹏孙潇楠张金涛
Owner CHANGZHOU INST OF TECH
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