Cross-shaped semiconductor materials for explosive detection as well as preparation method and application of cross-shaped semiconductor materials

A semiconductor, cross-type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, analytical materials, etc., can solve problems such as changing molecular stacking, difficulty in device recovery and reuse, and degrading device performance, achieving device performance recovery, high Effect of flatness, good electrical properties

Inactive Publication Date: 2020-12-22
杭州奥得科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of sensing functional groups may change the molecular packing and greatly reduce the perfo

Method used

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  • Cross-shaped semiconductor materials for explosive detection as well as preparation method and application of cross-shaped semiconductor materials
  • Cross-shaped semiconductor materials for explosive detection as well as preparation method and application of cross-shaped semiconductor materials
  • Cross-shaped semiconductor materials for explosive detection as well as preparation method and application of cross-shaped semiconductor materials

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Experimental program
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Effect test

Example Embodiment

[0034]The present invention also provides a method for preparing a cross-shaped semiconductor material for explosive detection, which includes the following steps:

[0035]S1: Add R-pyrrole compound and alkylamine salt to organic solvent I, continue to add R`-furan containing aldehyde group or R`-pyridine containing aldehyde group, and catalyst I, control the temperature, and perform reflux After the reaction is completed and the temperature is lowered, the reaction mixture is filtered and dried to obtain a solid reaction crude product. Among them, the alkylamine salt plays a role of phase transfer catalysis in the reaction, and promotes the reaction of the R-pyrrole compound with the R`-furan of the aldehyde group or the R`-pyridine containing the aldehyde group. It should be noted that the crude solid reaction product obtained in this step is a mixture of the target product and its isomers.

[0036]S2: Take the solid reaction crude product prepared in step S1 and catalyst II and add the...

Example Embodiment

[0052]Example 1

[0053]A cross-shaped semiconductor material for explosive detection, specifically compound M1 with the following structure,

[0054]

[0055]First add the reaction raw materials indole (0.02mol) and tetrabutylammonium iodide (0.002mol) solution into a two-necked reaction flask (250ml) containing acetonitrile solvent (50ml), and then add pyridine-2-carbaldehyde (0.02mol) mol) and HBF4(0.002mol), the reaction temperature is controlled to 80°C, and the reflux reaction is performed for 10 hours. After the reaction is finished and the temperature is lowered, the reaction mixture is filtered, washed with acetonitrile solution (50 ml), and dried to obtain a crude solid reaction product.

[0056]Add acetonitrile solution (50ml) and I2(0.002mol), control the reaction temperature to 80°C and continue the reflux reaction for 14h. After the reaction is finished and the temperature is lowered, the reaction mixture is poured into water. After suction filtration, another crude solid product ...

Example Embodiment

[0061]Example 2

[0062]A cross-shaped semiconductor material for explosive detection, specifically compound M2 with the following structure,

[0063]

[0064]First add the reaction raw material indole (0.02mol) and tetrabutylammonium iodide (0.001mol) solution into a two-necked reaction flask (250ml) containing acetonitrile solvent (60ml), and then add 5-octylfuran-2 -Formaldehyde (0.02mol) and HBF4(0.001 mol), control the reaction temperature to 80°C, and perform reflux reaction for 14 hours. After the reaction is finished and the temperature is lowered, the reaction mixture is filtered, washed with an acetonitrile solution (60 ml), and dried to obtain a crude solid reaction product.

[0065]Add acetonitrile solution (50ml) and I2(0.001mol), control the reaction temperature to 80℃, and continue to reflux for 10h. After the reaction is finished and cool down, the reaction mixture is poured into water and filtered with suction to obtain another crude solid product, which is deep due to impuriti...

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Abstract

The invention relates to the technical field of photoelectric materials, in particular to cross-shaped semiconductor materials for explosive detection and a preparation method and application of the cross-shaped semiconductor materials. The chemical structural formula of each cross-shaped semiconductor material is any one formula I to formula V. In the formulas, R and R' are respectively H or an alkyl group, and the number of carbon atoms is 6-14. The synthesis method of the series of the cross-shaped semiconductor materials is simple and easy to operate; and the cross-shaped semiconductor materials have high specific selectivity and high sensitivity and provide favorable help for a chemical explosive detection technology.

Description

【Technical field】 [0001] The invention relates to the technical field of photoelectric materials, in particular to a cross-shaped semiconductor material used for explosive detection and its preparation method and application. 【Background technique】 [0002] The adverse effects of explosives on national defense security, ecological environment and human health have aroused widespread concern. Traditional detection methods for explosives mainly include detection methods such as chromatography, spectroscopy and mass spectrometry. Although the chromatographic method has good separation effect and detection sensitivity, its separation speed is slow and it is difficult to quickly characterize it. The spectroscopic method is small in size, but it is not perfect for the multi-component analysis of explosives. Mass spectrometry realizes multi-component analysis, with high sensitivity, low false alarm rate, and fast analysis speed, but the equipment is heavy and inconvenient to carr...

Claims

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Application Information

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IPC IPC(8): C07D487/04C07D495/22G01N27/00H01L51/05H01L51/30H01L51/50H01L51/54
CPCC07D487/04C07D495/22G01N27/00H10K85/653H10K85/654H10K85/657H10K85/6574H10K10/46H10K85/6572H10K50/00
Inventor 高建华刘江涛乔冠伟高立群
Owner 杭州奥得科技有限公司
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