Hydrogen recycle system and hydrogen recycle method

Abstract

Provided are a hydrogen recycle system and a hydrogen recycle method, whereby hydrogen can be purified to high purity at high yield from a gas, said gas being exhausted from a nitride compound production device, and recycled. The hydrogen recycle system 1 comprises an exhaust gas supply path 11 supplying a gas exhausted from a nitride compound production device 2, a hydrogen recycle means 10 and ahydrogen supply path 12. The hydrogen recycle means 10 of the hydrogen recycle system 1 is characterized by comprising: a plasma reaction vessel 31 that defines at least a part of a discharge space 32; a hydrogen separation membrane 34 that divides the discharge space 32 from a hydrogen flow path 33 communicated with the hydrogen supply path 12, defines at least a part of the discharge space 32 by one surface thereof and also defines at least a part of the hydrogen flow path 33 by the other surface thereof; an electrode 35 that is disposed outside the discharge space 32; and an adsorbent 36 that is filled in the discharge space 32 and adsorbs the supplied exhaust gas.

Description

technical field [0001] The present invention relates to a hydrogen recovery system and a hydrogen recovery method, in particular to a hydrogen recovery system for recovering hydrogen by purifying high-purity hydrogen from hydrogen-containing waste gas discharged from metal organic compound chemical vapor deposition (MOCVD) equipment, and from A method for recovering hydrogen from waste gas discharged from MOCVD equipment. Background technique [0002] In recent years, the use of compound semiconductors instead of conventional silicon semiconductors has become widespread in light-emitting devices such as light-emitting diodes or in high-frequency devices, power semiconductor devices, and the like. In particular, demand for gallium nitride semiconductors using gallium nitride (GaN) is increasing, and in recent years, techniques for producing such semiconductors have been rapidly developed. GaN semiconductors are produced by growing thin-film crystals of GaN on substrates made...

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Problems solved by technology

When the equipment disclosed in Patent Document 2 is enlarged, the energy efficiency may be deteriorated, which means that the hydrogen production rate may decrease when large-scale hydrogen production is required

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