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Photodetector

A photodetector and photocurrent detection technology, which is applied in the direction of instruments, optics, light guides, etc., can solve the problems of falling defective products and uneven light receiving performance

Pending Publication Date: 2020-12-29
NIPPON TELEGRAPH & TELEPHONE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] figure 1 , figure 2 The conventional GePD100 shown has the following problems. As a semiconductor device, the light-receiving performance is usually uneven due to manufacturing errors, contamination, etc., and in some cases, so-called defective products that significantly degrade the performance may occur.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Figure 4 It is a plan view schematically showing a chip structure of a GePD400 according to Structural Example 1 of Example 1 of the photodetector of the present invention. Figure 5 yes Figure 4 The cross-sectional view of the V-V plane (the plane perpendicular to the direction of light travel) of .

[0064] Figure 4 and Figure 5 The GePD 400 of the shown structure example 1 includes, for example, a Si substrate 401, a lower cladding layer 402 including a Si oxide film, a silicon core layer 410 for guiding signal light to be detected, and a substrate for transmitting the signal light from the substrate to the same SOI structure as conventional ones. The input waveguide 4101 that guides the wave toward the silicon core layer in the in-plane direction is formed on the semiconductor substrate.

[0065] On the region of the silicon plate 4102 of the silicon core layer 410 of the semiconductor substrate, a Ge layer 414 constituting a light absorbing layer is provide...

Embodiment 2

[0093] Figure 15 It is a diagram showing the configuration of the optical circuit of the second embodiment in which the photodetector in the first embodiment is mounted on a coherent optical transmitter having a polarization diversity configuration. Figure 15 It shows: an optical power splitter 801, which branches the transmission carrier light from the light source; a Y polarization modulation circuit 802 and an X polarization modulation circuit 803, which use electrical signals for each polarization to branch the transmission carrier light light modulation; the polarization rotator 808, which rotates the polarization of one polarized light to the other; and the polarization beam combiner 809, which serves as a polarization separation / combination circuit for combining modulated lights of each polarization.

[0094] as Figure 15 The power monitoring configuration of the coherent optical transmitter of the present invention branches off a part of the optical output of the X...

Embodiment 3

[0096] Figure 16 It is a diagram showing the configuration of the optical circuit of Example 3 in which the photodetector in Example 1 is mounted on a coherent optical receiver having a polarization diversity configuration.

[0097] Figure 16 shows the optical input path 901 of the reference light from the local oscillator light source, the input path 902 from the input port of the received signal light, the polarization beam splitter 903 as a polarization splitting / combining circuit for polarization splitting the received signal light, Polarization rotator 904 . Figure 16 It also shows the optical power splitter 909 for optical branching, the optical coherent mixer 910 for Y polarization demodulation, the optical coherent mixer 911 for X polarization demodulation, and the conversion of the demodulated optical signal PD912, 913 for electrical signals.

[0098] In addition, as a configuration for monitoring the power of received light, Figure 16 Shown are monitoring opt...

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PUM

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Abstract

Provided is a photodetector that allows evaluation examination of the characteristics of the photodetector alone regarding photosensitivity, OE characteristics such as optical input and electrical output, even with respect to the wavelengths and temperature dependence characteristics without requiring any additional inspection circuit. The photodetector (400) has light absorption layers (414, 415)formed on a semiconductor substrate and detects signal light entered into the light absorption layers (414, 415) from inside the substrate surface of the semiconductor substrate, and is characterizedin that the light absorption layers (414, 415) have portions not covered with a photocurrent detection electrode (417), connected to the light absorption layers (414, 415), when the substrate surfaceof the semiconductor substrate is viewed from outside the substrate surface.

Description

technical field [0001] The present invention relates to a photodetector used in an optical communication system, an optical information processing system, and more particularly to a configuration for providing a photodetector that facilitates initial inspection at the time of manufacture. Background technique [0002] With the popularization of optical communication in recent years, cost reduction of optical communication devices is required. As one of the solutions, there is a method of forming an optical circuit constituting an optical communication device on a large-diameter wafer such as a silicon wafer using micro-optical circuit technology such as silicon photonics technology. Thereby, many chips of an optical circuit can be collectively formed, and the material cost per chip can be greatly reduced, thereby achieving cost reduction of the optical communication device. As a representative photodetector formed on a silicon (Si) substrate using such a technology, there i...

Claims

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Application Information

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IPC IPC(8): H01L31/10G02B6/12G02B6/126
CPCG02B6/126G02B6/1228G02B6/4201H01L31/1037H01L31/022408H01L31/1013
Inventor 武田浩太郎那须悠介
Owner NIPPON TELEGRAPH & TELEPHONE CORP
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