Thermopile power generation device based on super-hydrophilic structure and preparation method thereof
A super-hydrophilic, thermopile technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device parts, thermoelectric devices using only Peltier or Seebeck effect, etc. The effect of stable structure and improved power generation efficiency of devices
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Embodiment 1
[0067] Include the following steps:
[0068] 1) cleaning
[0069] Using a silicon wafer as the substrate material, the substrate was ultrasonically cleaned with acetone, alcohol, and deionized water for 30 minutes, dried with nitrogen gas, and then dried on a hot plate at 100°C for later use.
[0070] 2) Plating insulating layer
[0071] Magnetron sputtering is used to sputter a silicon nitride insulating layer on the surface of the substrate with a sputtering thickness of 100 nm. The insulating layer can be used to insulate subsequent electrodes from the substrate.
[0072] 3) Prepare cold end area graphics
[0073] The pattern of the cold end area is prepared by photolithography steps such as gluing, pre-baking, exposure, and development.
[0074] 4) Plating cold end material
[0075] The cold end material is deposited on the surface of the substrate by magnetron sputtering, including the cold end material itself and the corresponding protective layer, and the cold end ...
Embodiment 2
[0108] Except the process parameter in table 2, other specific operation steps and parameter are the same as embodiment 1.
[0109] The technological parameter that table 2 embodiment 2 adopts
[0110]
[0111]
Embodiment 3
[0113] Except the process parameter in table 3, other specific operation steps and parameter are the same as embodiment 1.
[0114] The technological parameter that table 3 embodiment 3 adopts
[0115]
[0116]
[0117] In the above embodiment, steps 3), 5), 7), 10), 13) and 15) can be prepared by photolithography or directly apply a physical mask. When the size is greater than 100 μm, a physical mask is selected. Below Photolithography is preferred for 10μm, electron beam lithography is used for preparation below 500nm, and lower cost is preferred for other ranges. The thickness of the insulating material in steps 2), 9) and 12) depends on the requirements of the degree of insulation, and the materials and thicknesses of the three are the same (for example, the thickness can be 300nm). In addition to the above examples, step 16) the superhydrophilic seed layer can also be other materials that can grow a superhydrophilic layer by the subsequent solution method, and step...
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