808nm waveband built-in grating pumping source chip
A pump source and chip technology, applied in the field of built-in grating pump source chips in the 808nm band, can solve problems such as narrow wavelength locking temperature range, inability to greatly simplify the temperature control system and active heat dissipation system, and inability to achieve high-efficiency pumping. , to achieve the effect of expanding the gain spectrum width and improving the pumping efficiency
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Embodiment 1
[0036]This embodiment provides a specific structure of the chip epitaxial layer in the 808nm band built-in grating pump source chip.
[0037] In this embodiment, the optoelectronics is used to limit the strain quantum well and the aluminum-free epitaxial structure respectively. The first epitaxial layer and the top layer of the second epitaxial layer both use InGaP aluminum-free epitaxial layer to prevent the occurrence of material components during the heating and constant temperature process before the subsequent epitaxial growth. Irreversible oxidation, unable to grow high-quality subsequent epitaxial layers.
[0038] In this embodiment, GaAs is selected as the substrate, a buried grating layer is grown on the substrate, and the wavelength is stabilized through the grating. The wavelength is not limited to the 808 band, but includes all the bands that can be realized on the GaAs substrate. Under the condition of placing a volume grating, lasers with two or more wavelengths ...
Embodiment 2
[0063] This embodiment provides a specific implementation scheme of the grating structure of the built-in grating pump source chip in the 808nm band.
[0064] Because the 808nm semiconductor laser chip is an FP laser, usually the wide-strip FP laser has multiple longitudinal and transverse modes, and it is a multi-longitudinal mode superfundamental laser, especially for the Bar chip that integrates multiple wide-strip light-emitting points. The spectral width is broad (~3nm).
[0065] Figure 3-4 Given the P-I-V-η characteristic curve (normal temperature) of a single Bar chip with a cavity length of 1mm and an 808nm band semiconductor laser, and the operating state spectral curve at 70°C and -55°C, it is difficult to achieve a wavelength of -55°C to 70°C with a single-wavelength built-in grating Locking range (the efficiency price paid is too large), even if the range of 125°C is realized, it is calculated according to the current best center wavelength temperature drift leve...
Embodiment 3
[0082] This embodiment provides a bar structure with a built-in grating pump source chip in the 808nm band.
[0083] Bar lasers can be divided into gain-guided and refractive index-guided in terms of their guiding mechanism. In gain-guided lasers, the side mode is determined by the optical gain distribution along the junction plane, and the optical gain is determined by the carrier distribution. Yes, this distribution is in turn affected by current spreading and carrier diffusion in the active region. The decrease in the effective refractive index caused by the carrier change is about 5×10 -3 , the formed refractive index anti-waveguide effect makes the threshold current I of this type of laser th High, η D Low. In order to fundamentally improve the characteristics of the bar laser, it is required to establish a built-in waveguide in the resonator, whose characteristics are basically independent of the excitation level. The characteristics of such a built-in waveguide are d...
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