Infrared detector with Van der Waals asymmetric barrier structure and preparation method

Abstract

The invention discloses an infrared detector with a Van der Waals asymmetric barrier structure and a preparation method. The detector structure comprises a substrate, a dielectric layer, a graphene layer, a molybdenum disulfide layer, a black phosphorus layer, a metal source electrode and a metal drain electrode. The preparation method of the device comprises the following steps of: sequentially transferring mechanically stripped graphene, molybdenum disulfide and black phosphorus to a substrate with a dielectric layer, and respectively manufacturing a metal source electrode and a metal drainelectrode on the black phosphorus and the graphene by using processes such as electron beam exposure, thermal evaporation and the like to form the Van der Waals single-carrier infrared photoelectric detector with a vertical structure. A multi-sub-barrier asymmetric barrier energy band structure is designed by utilizing rich energy band structures and unique physical characteristics of a two-dimensional material, dark current can be effectively suppressed, and then medium-wave infrared room-temperature black body detection, polarization detection and infrared imaging are realized. The detectorhas the characteristics of room-temperature operation, multi-sub-blocking, medium-wave infrared response, high sensitivity, fast response, black body detection and the like.

Description

technical field [0001] The invention relates to an infrared detector with a van der Waals asymmetric barrier structure, in particular to a mid-wave infrared single-carrier photodetector and a preparation method. Background technique [0002] Single-carrier photodetectors are proposed to solve the problem of large dark current in infrared detectors, so that infrared detectors can work at high temperatures. The barrier layer of single-carrier photodetectors requires strict consideration of energy band matching and lattice matching. There is a larger potential barrier in the conduction band or valence band to block the majority carriers, and a near-zero potential barrier is designed in the other energy band so that the carriers in this energy band can move freely. Therefore, dark currents such as surface leakage currents and multisub dark currents are blocked by potential barriers, while photocurrents are not suppressed. However, the inevitable lattice mismatch and interfacia...

AI Technical Summary

Problems solved by technology

However, the inevitable lattice mismatch and interfacial defects in the epitaxial growth of conventional materials seriously hinder the development of high-performance single-carrier photodetectors.

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