Gallium arsenide/carbon nanotube heterojunction ultrathin solar cell structure and preparation thereof
A technology for solar cells and carbon nanotubes, applied in the field of solar cells, can solve the problems of not considering single-walled carbon nanotubes, low absorption characteristics, energy loss of incident light, etc., so as to reduce the probability of carrier recombination and improve the utilization rate of photons. , Improve the effect of photoelectric conversion efficiency
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Embodiment 1
[0031] This embodiment provides a gallium arsenide / carbon nanotube heterojunction ultra-thin solar cell and its preparation method, the schematic diagram of which is shown in figure 1 , 2 shown. The device includes a back reflection layer composed of a patterned nickel-germanium gold electrode 3 and a dielectric layer array 2, an N-type gallium arsenide 1, a P-type single-walled carbon nanotube 5, a patterned gold electrode 4 and an anti-reflection layer 6. Its preparation flow chart is as image 3 shown. Concrete preparation steps are as follows:
[0032] (1) Transfer the graphene on the copper substrate to the surface of the gallium arsenide substrate by wet process with PMMA transfer medium, then carry out epitaxial growth of 200nm thick N-type gallium arsenide surface, and prepare the side length by micro-nano lithography process TiO with a size of 300nm, a thickness of 100nm, and a pitch of 400nm 2 array of dielectric layers. Then use electron beam evaporation techn...
Embodiment 2
[0037] This embodiment provides a gallium arsenide / carbon nanotube heterojunction ultra-thin solar cell and its preparation method, the schematic diagram of which is shown in figure 1 shown. The device includes a back reflection layer composed of a patterned nickel-germanium gold electrode and a dielectric layer array, N-type gallium arsenide, P-type single-walled carbon nanotubes, a patterned gold electrode and an anti-reflection layer. The construction method is as follows:
[0038] (1) A 300nm-thick N-type GaAs surface is epitaxially grown on a GaAs / graphene substrate, and TiO with a side length of 400nm, a thickness of 150nm, and a spacing of 600nm is prepared by micro-nano lithography 2 array of dielectric layers. Then electron beam evaporation technique was used on TiO 2 A layer of nickel-germanium gold with a thickness of 200nm is deposited on the surface of the dielectric layer array as a back reflection electrode.
[0039] (2) Using a wet chemical stripping process...
Embodiment 3
[0043] This embodiment provides a gallium arsenide / carbon nanotube heterojunction ultra-thin solar cell and its preparation method, the schematic diagram of which is shown in figure 1 shown. The device includes a back reflection layer composed of a patterned nickel-germanium gold electrode and a dielectric layer array, N-type gallium arsenide, P-type single-walled carbon nanotubes, a patterned gold electrode and an anti-reflection layer. The construction method is as follows:
[0044] (1) Epitaxially grow a 300nm-thick N-type GaAs surface on a GaAs substrate, and prepare SiO with a side length of 300nm, a thickness of 200nm, and a spacing of 500nm by using a micro-nano lithography process 2 array of dielectric layers. Then electron beam evaporation technique was used on SiO 2 A layer of nickel-germanium gold with a thickness of 300nm is deposited on the surface of the dielectric layer array as a back reflection electrode.
[0045] (2) Using a wet chemical lift-off process, th...
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Abstract
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