Hot isostatic pressing preparation method of nickel oxide-based ceramic target material

A technology of hot isostatic pressing and nickel-based ceramics, which is applied in ceramic molding machines, manufacturing tools, auxiliary molding equipment, etc., and can solve the problems that nickel oxide-based ceramic target materials cannot be prepared.

Inactive Publication Date: 2021-03-05
北京航大微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology cannot prepare this kind of nickel oxide-based ceramic target material.

Method used

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  • Hot isostatic pressing preparation method of nickel oxide-based ceramic target material
  • Hot isostatic pressing preparation method of nickel oxide-based ceramic target material
  • Hot isostatic pressing preparation method of nickel oxide-based ceramic target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] 1. Preparation of nickel oxide powder:

[0095] (a) Pass high-purity nickel vapor into oxygen at 1650°C to form high-nickel oxide;

[0096] (b) mixing high-nickel oxide and high-purity graphite reducing agent and roasting at 700°C to obtain a nickel oxide block;

[0097] (c) jet pulverization obtains nickel oxide coarse powder;

[0098] (d) The nickel oxide coarse powder is subjected to wet ball milling: the ball-to-material ratio is 3:1, the average diameter of the balls is 5mm, the volume of the balls and the slurry accounts for 50% of the volume of the grinding chamber, and the ball mills for 15 hours to obtain the nickel oxide The purity of the powder is 99.99%, and the micrograph of the nickel oxide powder is figure 1 , the XRD pattern of nickel oxide powder is figure 2 , the PSD picture of nickel oxide powder is image 3 , it can be obtained from the figure that the average particle size of the nickel oxide powder prepared in this example is 1.0 μm, and the D50...

Embodiment 2

[0115] The difference between this example and Example 1 is that the dopant source components in the raw material preparation step A are Li:Na:Zn:W=1:0.5:0.8:1.2 in terms of molar ratio.

[0116] The obtained ceramic target has an average grain size of 4 μm, a doped phase size of 200 nm, a bulk electrical conductivity of 25 S / cm, and a relative density of 99.1% measured by the drainage method.

Embodiment 3

[0118] 1. Preparation of nickel oxide powder:

[0119] (a) Pass high-purity nickel vapor into oxygen at 1600°C to form high-nickel oxide;

[0120] (b) roasting high nickel oxide in a hydrogen atmosphere at 1000°C to obtain a nickel oxide block;

[0121] (c) jet pulverization obtains nickel oxide coarse powder;

[0122] (d) The nickel oxide coarse powder is subjected to wet ball milling: the ball-to-material ratio is 2:1, the average diameter of the balls is 0.3mm, the volume of the balls and the slurry accounts for 2 / 3 of the volume of the grinding chamber, and the ball mills for 20 hours to obtain the Described nickel oxide powder; The purity of the nickel oxide powder that obtains is 99.995%, and the micrograph of the nickel oxide powder that present embodiment prepares is Figure 5 , the PSD picture is Image 6 , the average particle size of the nickel oxide powder prepared in this example is 500nm, and the D50 particle size is 50nm. The solvent used in the wet ball mil...

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Abstract

The invention relates to a hot isostatic pressing preparation method of a nickel oxide-based ceramic target material. The method comprises the following steps: A, performing raw material preparation:preparing mixed powder of nickel oxide powder and doped source powder, the total mass fraction of doped source elements in the mixed powder not being higher than 10%, and the doped source being selected from one or more of Li, Na, Mg, Al, Si, K, Zn, Zr, Mn, Cu, Cr, V, W and Ti, the purity of the nickel oxide powder and the doping source powder being higher than 99.99%, the average particle size being 500 nm-2 microns, and the D50 particle size is 50 nm-800 nm; B, performing spray drying; C, loading the product into a sheath mold; D, performing vacuum degassing; E, performing hot isostatic pressing treatment, specifically, the pressure intensity being 50-200 MPa, the sintering temperature being 500-1200 DEG C, the heat preservation time being 1-5h, and the temperature rising speed being 0.5-3 DEG C/min; F, obtaining a sintered blank; and G, carrying out machining or not carrying out machining according to needs to reach the designed size to obtain a target material finished product.

Description

technical field [0001] The invention relates to a method for preparing a ceramic target material, in particular to a method for preparing a nickel oxide ceramic target material by hot isostatic pressing. Background technique [0002] Nickel oxide is a P-type transition group wide bandgap semiconductor material with 3d outermost electronic structure, which has excellent chemical stability and some special photoelectric properties. At present, nickel oxide thin films have been found to have great application potential, including P-type transparent conductive thin films, electrochromic thin films, catalytic thin films, magnetic thin films, etc. [0003] In order to prepare the above-mentioned thin films, it is a promising direction to use nickel oxide-based ceramic targets to prepare films using magnetron sputtering and other coating methods. However, the nickel oxide-based ceramics in the prior art have poor conductivity, which makes the prepared nickel oxide film poor in con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622C04B35/626C04B35/645B28B17/02B28B3/00
CPCC04B35/01C04B35/622C04B35/62605C04B35/6455B28B3/003B28B17/026C04B2235/5436C04B2235/5445C04B2235/96
Inventor 高明张虎张花蕊杨本润
Owner 北京航大微纳科技有限公司
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