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Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material

A cold isostatic pressing, nickel-based ceramic technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of not being able to prepare nickel oxide-based ceramic target materials

Inactive Publication Date: 2021-03-09
北京航大微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology cannot prepare this kind of nickel oxide-based ceramic target material.

Method used

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  • Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material
  • Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material
  • Cold isostatic pressing forming preparation method of nickel oxide-based ceramic target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0099] 1. Preparation of nickel oxide powder:

[0100] (a) Pass high-purity nickel vapor into oxygen at 1650°C to form high-nickel oxide;

[0101] (b) mixing high-nickel oxide with high-purity graphite reducing agent and roasting at 700°C to obtain a nickel oxide block;_

[0102] (c) jet pulverization obtains nickel oxide coarse powder;

[0103] (d) The nickel oxide coarse powder is subjected to wet ball milling: the ball-to-material ratio is 3:1, the average diameter of the balls is 5mm, the volume of the balls and the slurry accounts for 50% of the volume of the grinding chamber, and the ball mills for 15 hours to obtain the nickel oxide The purity of the powder is 99.99%, and the micrograph of the nickel oxide powder is figure 1 , the XRD pattern of nickel oxide powder is figure 2 , the PSD picture of nickel oxide powder is image 3 , it can be obtained from the figure that the average particle size of the nickel oxide powder prepared in this example is 1.0 μm, and the...

Embodiment 2

[0122] The difference between this example and Example 1 is that the dopant source components in the raw material preparation step A are Li:Na:Zn:W=1:0.5:0.8:1.2 in terms of molar ratio.

[0123] The obtained ceramic target has an average grain size of 4.5 μm, a doped phase size of 210 nm, a bulk electrical conductivity of 27 S / cm, and a relative density of 99.0% measured by the drainage method.

Embodiment 3

[0125] 1. Preparation of nickel oxide powder:

[0126] (a) Pass high-purity nickel vapor into oxygen at 1600°C to form high-nickel oxide;

[0127] (b) roasting high nickel oxide in a hydrogen atmosphere at 1000°C to obtain a nickel oxide block;

[0128] (c) jet pulverization obtains nickel oxide coarse powder;

[0129] (d) The nickel oxide coarse powder is subjected to wet ball milling: the ball-to-material ratio is 2:1, the average diameter of the balls is 0.3mm, the volume of the balls and the slurry accounts for 2 / 3 of the volume of the grinding chamber, and the ball mills for 20 hours to obtain the Described nickel oxide powder; The purity of the nickel oxide powder that obtains is 99.995%, and the micrograph of the nickel oxide powder that present embodiment prepares is Figure 5 , the PSD picture is Figure 6 , the average particle size of the nickel oxide powder prepared in this example is 500nm, and the D50 particle size is 50nm. The solvent used in the wet ball mi...

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Abstract

The invention relates to a cold isostatic pressing forming preparation method of a nickel oxide-based ceramic target material, wherein the method comprises the following steps: A, preparing raw materials: preparing mixed powder of nickel oxide powder and doped source powder, wherein the total mass fraction of doped source elements in the mixed powder is not more than 10%, wherein the doping sourceelement is selected from one or more of 0-6% of Li, 0-0.3% of Na, 0-1.0% of Mg, 0-0.1% of Al, 0-0.1% of Si, 0-0.15% of K, 0-12% of Zn, 0-1.5% of Zr, 0-1.2% of Mn, 0-10% of Cu, 0-1.2% of Cr, 0-0.3% ofV, 0-10% of W and 0-2.5% of Ti; B, carrying out spray drying; C, compacting by vibration; D, feeding a mold into a cold isostatic pressing chamber for pressing; E, degumming a biscuit; F, sintering;G, cooling after heat preservation is finished; and H, machining or not machining according to needs. The preparation method can be used for preparing the nickel oxide-based ceramic which is good in conductivity, relatively high in purity and fine in grain size.

Description

technical field [0001] The invention relates to a method for preparing a ceramic target material, in particular to a method for preparing a nickel oxide-based ceramic target material by cold isostatic pressing. Background technique [0002] Nickel oxide is a P-type transition group wide bandgap semiconductor material with 3d outermost electronic structure, which has excellent chemical stability and some special photoelectric properties. At present, nickel oxide thin films have been found to have great application potential, including P-type transparent conductive thin films, electrochromic thin films, catalytic thin films, magnetic thin films, etc. [0003] In order to prepare the above-mentioned thin films, it is a promising direction to use nickel oxide-based ceramic targets to prepare films using magnetron sputtering and other coating methods. However, the nickel oxide-based ceramics in the prior art have poor conductivity, which makes the prepared nickel oxide film poor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/645C23C14/34C23C14/08
CPCC04B35/01C04B35/6455C23C14/3414C23C14/08C04B2235/608C04B2235/6562C04B2235/6567C04B2235/77C04B2235/786C04B2235/96C04B2235/443C04B2235/442C04B2235/445C04B2235/449C04B2235/425C04B2235/40
Inventor 高明张虎张花蕊杨本润
Owner 北京航大微纳科技有限公司
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