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Method for eliminating diffraction and interference caused by light passing through photomask

A photomask and light elimination technology, applied in the field of optical imaging, can solve problems such as distortion of lithographic imaging results, uneven exposure patterns, light diffraction and interference, etc., and achieve simple structure, good illumination uniformity, and light source utilization. high effect

Pending Publication Date: 2021-03-19
ZHENGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In the field of micro-nano processing, the photolithography technology of micro-nano forming is to use the optical system to accurately transfer the pattern on the photomask to the silicon wafer or substrate coated with photoresist, and the core technology that affects the size reduction of micro-nano forming It is the micro-nano lithography technology. When the light is reduced to the micro-nano scale, when the light passes through the micro-scale pattern of the photomask, it will cause the diffraction and interference of light, especially to make multiple repetitive elements on the silicon wafer. Faced with the exposure of periodically repeated patterns, the problem of light diffraction and interference will be more serious, and it will directly cause distortion of the lithographic imaging results, resulting in uneven, blurred, ghosting and other phenomena in the exposed pattern

Method used

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  • Method for eliminating diffraction and interference caused by light passing through photomask
  • Method for eliminating diffraction and interference caused by light passing through photomask
  • Method for eliminating diffraction and interference caused by light passing through photomask

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Embodiment 1

[0023] EXAMPLIC A: This embodiment is used to eliminate the error of the exposure pattern during the exposure of the photolithography, exhibiting this method to eliminate the effect of diffraction and interference through the photomask, including the following steps:

[0024] Step 1: figure 1 The point source array is set in the lightning machine device, and the point light array is linearly arranged from squares of 9 sets of point light source according to 3 * 3, each set of point light sources consists of a square linear arrangement of nine LED point lights according to 3 * 3;

[0025] Step 2: In the point source array, the point light source of each group of point light source is mixed with a point of 380 nm, and the balance is a point light source of the wavelength of 365 nm;

[0026] Step 3: figure 2 As shown, 10 power controllers are set, 9 of which controls the point light sources of 365 nm wavelengths in each group of point light sources, and the other controller control...

Embodiment 2

[0029] Embodiment 2: This embodiment is for eliminating light by a method of diffuse and interference by a photomask as an example, exhibiting a specific process of eliminating the microena imaging graphic error caused by light winding and interference, including the following steps:

[0030] Step 1: Figure 4 In the photolithography device, the point source array is provided, and the point light source array is arranged by the 7-set point source according to the center symmetrical nominal shape, each set of point light sources consists of a square linear arrangement of 9 LED point light from 3 * 3;

[0031] Step 2: In the point light source array, mix the central point source group, 9 wavelengths of 380 nm, and 6 sets of point light source groups are points of 365 nm;

[0032] Step 3: Figure 5 As shown, seven power controllers are provided, wherein 6 controllers respectively control the 6-group wavelength 365 nm point light source group, another point light source group of wavele...

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Abstract

The invention discloses a method for eliminating diffraction and interference caused by light passing through a photomask, and relates to a method for setting a light source of photoetching machine equipment in the field of micro-nano processing. According to the invention, more than two point light sources with similar wavelengths are mixed in the multi-point array light source of the photoetching machine equipment, so that the distortion of a micro-nano imaging pattern caused by diffraction and interference of light passing through a photomask microstructure can be effectively eliminated. And especially, the imaging result caused by light diffraction and interference when the micro-nano scale graphic units which are repeatedly and periodically arranged in a large area are imaged can be eliminated. According to the method for eliminating diffraction and interference caused by light passing through the photomask, compared with a method for eliminating light diffraction and interferenceby improving optical components in a light path, the method for purely improving a light source is simpler, the light source utilization rate is high, the illumination uniformity is good, and assembling and overhauling are easy.

Description

[0001] The present invention relates to an optical imaging technique of a lightning machine device, which is mainly used in the field of micro-machining process. Background technique [0002] In the field of microbial processing, the micro-stagnation photolithography technique is to accurately transfer the pattern on the photomask template to a silicon or substrate that affects the photoresist, which affects the core technique of microbial molding dimension. That is, the microbial photolithography technique is reduced to the micronized scale pattern, and the light is diffused and interference problem, especially in silicon wafers, need to make multiple repetitive components. The exposure of periodic repeat patterns, and this optical diffraction and interference problem will be more serious, and the distortion of the photolithography results directly caused the exposure pattern, blur, returning, and other phenomena. Therefore, a method that can effectively solve the optical interfer...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/7005G03F7/70433
Inventor 卫荣汉许雁雅
Owner ZHENGZHOU UNIV
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