Thin film patterning process method, composite thin film and electronic component

A process method and thin-film graphic technology, which is applied in the manufacture of electrical components, piezoelectric/electrostrictive/magnetostrictive devices, semiconductor/solid-state devices, etc. Noise ratio, chirp, coupling efficiency and other issues to achieve the effect of reducing the difficulty of etching and increasing the etching rate

Active Publication Date: 2021-03-23
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem in the prior art, since lithium niobate and lithium tantalate themselves have very stable physical and chemical properties, it is very difficult to etch patterns on the thin film layer, and will cause certain damage to the thin film layer, thereby Issues such as signal-to-noise ratio, chirp, and coupling efficiency that affect the applied electronic devices, this application provides a thin film patterning process method, composite thin film and electronic components

Method used

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  • Thin film patterning process method, composite thin film and electronic component
  • Thin film patterning process method, composite thin film and electronic component
  • Thin film patterning process method, composite thin film and electronic component

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Embodiment 1

[0033] refer to figure 1 , the embodiment of the present application provides a film patterning process method, including the following steps:

[0034] Step 101, performing the first ion implantation from the ion implantation of the film matrix to the interior of the film matrix, forming a film layer, a separation layer and a residual layer in the film matrix.

[0035] The thin film substrate refers to a base material with a certain thickness, which is used to prepare the thin film layer, that is, a wafer with a certain thickness. The film substrate can be any material with optoelectronic or piezoelectric properties, such as lithium niobate, lithium tantalate, gallium arsenide, silicon, ceramic, lithium tetraborate, gallium arsenide, potassium titanyl phosphate, rubidium titanyl phosphate, or quartz and other materials, which are not limited in this application.

[0036] The embodiment of the present application does not specifically limit the first ion implantation method, ...

Embodiment 2

[0060] refer to figure 2 , the second embodiment of the present application is basically similar to the above-mentioned first embodiment, the difference is that, between the above-mentioned step 101 and step 102, the second embodiment of the present application adds the ion implantation of the thin-film substrate to the inside of the thin-film substrate. The step of two ion implantation is specifically as follows step 201:

[0061] Step 201, performing a second ion implantation from the ion implantation of the film matrix into the film matrix, the mass of implanted ions in the second ion implantation is greater than the mass of implanted ions in the first ion implantation, and the second ion implantation The implantation depth of the implantation is greater than the implantation depth of the first ion implantation.

[0062] Compared with the first ion implantation, the implanted ions of the second ion implantation adopt heavy ions, that is, the mass of the implanted ions of ...

Embodiment 3

[0066] refer to image 3 , the third embodiment of the present application is basically similar to the first embodiment above, the difference is that, between the above step 103 and step 104, the third embodiment of the present application adds the second step from the thin film layer to the base substrate Ion implantation, specifically step 301 as follows:

[0067] Step 301: Perform a second ion implantation from the thin film layer to the base substrate, the implanted ion mass of the second ion implantation is greater than the implanted ion mass of the first ion implantation, and the second ion implantation The implantation depth is greater than the implantation depth of the first ion implantation.

[0068] The second bonded body prepared in step 103 includes a base substrate and a thin film layer stacked on the base substrate. In order to further increase the etching rate, a second ion implantation is performed from the thin film layer to the base substrate , wherein, for...

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PUM

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Abstract

The invention discloses a thin film patterning process method, a composite thin film and an electronic component. The method comprises the steps of carrying out the first ion implantation from an ionimplantation surface of a thin film substrate to the interior of the thin film substrate, and forming a thin film layer, a separation layer and a remainder layer in the thin film substrate, bonding the substrate with the ion implantation surface of the thin film substrate to obtain a first bonding body, performing heat treatment or mechanical pulling treatment on the first bonding body to peel offthe residual layer from the first bonding body to obtain a second bonding body, the second bonding body comprising a thin film layer and a substrate base plate which are stacked, etching the thin film layer in the second bonding body according to the target pattern to obtain a thin film layer with the target pattern, and carrying out annealing treatment on the second bonding body after etching treatment. The lattice damage exists in the thin film layer, so that the physical characteristics of the thin film layer are attenuated, the thin film layer in the second bonding body is etched according to the target pattern before annealing treatment, the etching difficulty can be greatly reduced, and the etching rate is increased.

Description

technical field [0001] The present application relates to the technical field of semiconductor preparation, in particular to a film patterning process method, a composite film and electronic components. Background technique [0002] Crystal materials such as lithium niobate or lithium tantalate are widely used in nonlinear optics, ferroelectricity, piezoelectricity, Electro-optic and other fields, especially thin-film bulk acoustic wave devices, filters, modulators, etc., have received more and more attention and applications. If crystal materials such as lithium niobate or lithium tantalate are used to prepare thin film bulk acoustic wave devices, filters, modulators and other electronic devices, in order to meet the needs of different application scenarios of electronic devices, it is generally necessary to use thin film layers with specific graphics. [0003] At present, the method for preparing a thin film layer with a pattern mainly includes the following steps: first,...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/3213H01L41/187H01L41/332
CPCH01L21/265H01L21/3213H10N30/8542H10N30/082
Inventor 李真宇张秀全李洋洋杨超韩智勇
Owner JINAN JINGZHENG ELECTRONICS
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