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Preparation method of infrared thermopile sensor for temperature and gas detection

A thermopile sensor and gas detection technology, applied in the field of infrared thermopile sensor preparation, can solve the problems of long response time, low detection rate, small response rate, etc., achieve short response time, improve overall performance, and high response rate Effect

Pending Publication Date: 2021-03-26
无锡宏芯传感科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing infrared thermopile sensor has low response rate, low detection rate and long response time due to the process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A preparation method for an infrared thermopile sensor for temperature and gas detection, comprising the following steps:

[0035] S1, silicon wafer treatment, polishing the silicon wafer on both sides, and then cleaning and drying;

[0036] S2, digging a groove, and photoetching an annular groove on the silicon wafer;

[0037] S3, growing a dielectric layer, first thermally growing a silicon oxide layer, the thickness of the silicon oxide layer is 0.5 μm, and then growing a polysilicon layer, the thickness of the polysilicon layer is 2 μm;

[0038] S4, ion implantation;

[0039] S5, the first layer of silicon strips, plasma etching the first layer of silicon strips on the polysilicon;

[0040] S6, an isolation layer, generating a silicon oxide isolation layer;

[0041] S7, the second layer of silicon strips, plasma etching the silicon oxide to form the second layer of silicon strips;

[0042] S8, growing a silicon oxide layer;

[0043] S9, etching out lead holes; ...

Embodiment 2

[0060] A preparation method for an infrared thermopile sensor for temperature and gas detection, comprising the following steps:

[0061] S1, silicon wafer treatment, polishing the silicon wafer on both sides, and then cleaning and drying;

[0062] S2, digging a groove, and photoetching an annular groove on the silicon wafer;

[0063] S3, growing a dielectric layer, first thermally growing a silicon oxide layer, the thickness of the silicon oxide layer is 0.6 μm, and then growing a polysilicon layer, the thickness of the polysilicon layer is 2 μm;

[0064] S4, ion implantation;

[0065] S5, the first layer of silicon strips, plasma etching the first layer of silicon strips on the polysilicon;

[0066] S6, an isolation layer, generating a silicon oxide isolation layer;

[0067] S7, the second layer of silicon strips, plasma etching the silicon oxide to form the second layer of silicon strips;

[0068] S8, growing a silicon oxide layer;

[0069] S9, etching out lead holes; ...

Embodiment 3

[0083] A preparation method for an infrared thermopile sensor for temperature and gas detection, comprising the following steps:

[0084] S1, silicon wafer treatment, polishing the silicon wafer on both sides, and then cleaning and drying;

[0085] S2, digging a groove, and photoetching an annular groove on the silicon wafer;

[0086] S3, growing a dielectric layer, first thermally growing a silicon oxide layer, the thickness of the silicon oxide layer is 0.55 μm, and then growing a polysilicon layer, the thickness of the polysilicon layer is 2 μm;

[0087] S4, ion implantation;

[0088] S5, the first layer of silicon strips, plasma etching the first layer of silicon strips on the polysilicon;

[0089] S6, an isolation layer, generating a silicon oxide isolation layer;

[0090] S7, the second layer of silicon strips, plasma etching the silicon oxide to form the second layer of silicon strips;

[0091] S8, growing a silicon oxide layer;

[0092] S9, etching out lead holes;...

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Abstract

The invention relates to a preparation method of an infrared thermopile sensor for temperature and gas detection. The preparation method comprises the following steps: processing a silicon wafer; digging a groove; growing a dielectric layer, firstly, thermally growing a silicon oxide layer, and then growing a polycrystalline silicon layer; performing ion implantation; etching the polycrystalline silicon by plasma to form a first layer of silicon strips; generating a silicon oxide isolation layer; etching the silicon oxide by plasma to form a second layer of silicon strips; growing a silicon oxide layer; etching a lead hole; carrying out metal connection, sputtering aluminum, photoetching an aluminum strip, and then carrying out corrosion forming to form a thermocouple pair structure of polycrystalline silicon and aluminum; alloying; evaporating a nickel layer under an inert gas condition; photoetching and etching the opening; and etching the cavity, subjecting the release structure todry etching, etching the silicon substrate according to the etching opening, forming a suspension absorption layer, and releasing the thermopile structure. The invention relates to a preparation method of a sensor, in particular to the preparation method of the infrared thermopile sensor for temperature and gas detection.

Description

technical field [0001] The invention relates to a preparation method of a sensor, in particular to a preparation method of an infrared thermopile sensor used for temperature and gas detection. Background technique [0002] The infrared thermopile sensor works based on the Seebeck effect mechanism. Two kinds of electrical conductor materials with different work functions are connected in series to construct a closed-loop circuit (that is, a pair of thermocouples). The higher temperature end of the two series connections is usually It is called "hot junction", and the lower end is called "cold junction". The carrier in the material moves along the direction of temperature gradient decrease, causing charge to accumulate at the cold junction. At this time, there is a thermoelectric potential in the circuit This phenomenon is the Seebeck effect. Multiple pairs of thermocouples are connected in series to form a thermopile. [0003] The existing infrared thermopile sensor has low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/28H01L35/32H01L35/34G01J5/12H10N10/10H10N10/01H10N10/17
CPCG01J5/12H10N10/10H10N10/01H10N10/17
Inventor 姬程鹏
Owner 无锡宏芯传感科技有限公司
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