Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method

A recovery method and technology of silane, applied in separation methods, chemical instruments and methods, organic silicon compounds, etc., can solve the problems of high preparation cost and high cost

Pending Publication Date: 2021-04-13
ZHEJIANG TIANCAIYUNJI TECH CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its high cost, it still cannot compete with traditional Si-based materials in many fields. Among them, a large amount of ultra-high-purity H2, silane / chlorosilane and alkanes (propane or methane) are consumed in the SiC-CVD epitaxy process. The preparation cost is high, and it cannot be recovered and reused from the tail gas

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method
  • Alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method
  • Alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Such as figure 1 As shown, a chlorine-based SiC-CVD epitaxial system tail gas FTrPSA recovery and method for the reaction of alkane and silane, the specific implementation steps include,

[0052] (1) Raw material gas, with propane (C3H8) as the main carbon (C) source, silane (SiH4) as the silicon (Si) source and adding hydrogen chloride (HCl) for chemical vapor deposition (CVD) preparation based on silicon carbide (SiC ) The tail gas in the chlorine-based epitaxy growth process, its main components are hydrogen (H2), HCl, C3H8, methane (CH4), SiH4, chlorosilane (SiHmCln), and trace amounts of carbon monoxide (CO), carbon dioxide (CO2), ethyl Alkanes and light hydrocarbon components above carbon 2 and higher hydrocarbons (C2+), chloroalkanes (CHmCln), water (H2O) and silicon dioxide (SiO2), Si / C fine particles, normal pressure and temperature.

[0053] (2) Pretreatment, the raw material gas is pressurized and sent to the pretreatment unit consisting of a dust collector,...

Embodiment 2

[0065] Such as figure 2 As shown, on the basis of Example 1, under the condition that the concentration of HCl and chlorosilane contained in the purified raw gas is relatively high, such as the total concentration of chlorine is greater than 5%, the chlorosilane spray absorption process can add a secondary chlorosilane spray The non-condensable gas 1' from the chlorosilane spray absorption process is compressed, condensed, and gas-liquid separated, and the formed non-condensable gas 1' is pressurized to 0.6~0.8MPa, and the cold and heat are exchanged to 80 After ~200°C, it enters from the bottom of the absorption tower in the additional secondary chlorosilane spray absorption process, uses a mixed liquid containing chlorosilane / HCl as the absorbent, and sprays down from the top of the secondary spray absorption tower with non-condensable gas 1 'Reverse mass transfer exchange is carried out, the absorption liquid enriched with chlorosilane and HCl flows out from the bottom of ...

Embodiment 3

[0067] Such as image 3 As shown, on the basis of Example 1, the desorbed gas from the pressure swing adsorption hydrogen extraction process enters the cryogenic rectification tower after being condensed, methane flows out from the bottom of the rectification tower with liquid as the product, and the non-condensable gas is hydrogen-rich gas. After cold and heat exchange, return to the pressure swing adsorption hydrogen extraction process to further recover H2. At this time, the yield of H2 product gas is higher than 93%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method. The method comprises the steps of pretreatment, chlorosilane spraying absorption, medium-temperature pressure swing adsorption concentration, adsorption purification, hydrogen purification, multi-stage evaporation / compression / condensation, chlorosilane medium-shallow cooling rectification, propane / silane separation, silane purification and propane refining. Hydrogen, hydrogen chloride, silane, propane and / or methane can be recovered from the SiC-CVD chlorine-containing epitaxial process tail gas based on alkane and silane reaction in a high-purity and high-yield manner, and are returned to the chlorine-based SiC-CVD epitaxial process as raw material gas for recycling, so that all components of the tail gas are recycled, the tail gas emission is reduced, and the blank of a chlorine-based SiC-CVD epitaxial process tail gas treatment technology is filled.

Description

technical field [0001] The invention relates to hydrogen (H2), hydrogen chloride (HCl), silane (SiH4) / chlorosilane (SiHmCln) and propane (C3H8) / methane (CH4) semiconductors during the epitaxial growth process of the third-generation semiconductor material silicon carbide (SiC) Extraction and purification of epitaxial materials and recovery of H2, HCl, SiH4 / SiHmCln and C3H8 / CH4 from epitaxial tail gas Recycling and reuse of semiconductor epitaxial materials and environmental protection of semiconductor manufacturing processes, more specifically, it involves a chlorine-based SiC that reacts with alkane and silane - CVD (Silicon Carbide Chemical Vapor Deposition) chlorine-containing epitaxial process tail gas FTrPSA (Full Temperature Range Pressure Swing Adsorption) recovery method. Background technique [0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/047B01D53/14C01B32/963C07C7/04C07C9/08C07F7/12C07F7/20
CPCB01D53/047B01D53/1418B01D53/1493C07C7/04C07F7/12C07F7/20C01B32/963B01D2252/504C07C9/08
Inventor 汪兰海钟娅玲钟雨明陈运唐金财蔡跃明
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com