Alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method

A recovery method and technology of silane, applied in separation methods, chemical instruments and methods, organic silicon compounds, etc., can solve the problems of high preparation cost and high cost
CN112642259APending Publication Date: 2021-04-13ZHEJIANG TIANCAIYUNJI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG TIANCAIYUNJI TECH CO LTD
Publication Date
2021-04-13

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Abstract

The invention discloses an alkane and silane reaction chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery method. The method comprises the steps of pretreatment, chlorosilane spraying absorption, medium-temperature pressure swing adsorption concentration, adsorption purification, hydrogen purification, multi-stage evaporation / compression / condensation, chlorosilane medium-shallow cooling rectification, propane / silane separation, silane purification and propane refining. Hydrogen, hydrogen chloride, silane, propane and / or methane can be recovered from the SiC-CVD chlorine-containing epitaxial process tail gas based on alkane and silane reaction in a high-purity and high-yield manner, and are returned to the chlorine-based SiC-CVD epitaxial process as raw material gas for recycling, so that all components of the tail gas are recycled, the tail gas emission is reduced, and the blank of a chlorine-based SiC-CVD epitaxial process tail gas treatment technology is filled.
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Description

technical field

[0001] The invention relates to hydrogen (H2), hydrogen chloride (HCl), silane (SiH4) / chlorosilane (SiHmCln) and propane (C3H8) / methane (CH4) semiconductors during the epitaxial growth process of the third-generation semiconductor material silicon carbide (SiC) Extraction and purification of epitaxial materials and recovery of H2, HCl, SiH4 / SiHmCln and C3H8 / CH4 from epitaxial tail gas Recycling and reuse of semiconductor epitaxial materials and environmental protection of semiconductor manufacturing processes, more specifically, it involves a chlorine-based SiC that reacts with alkane and silane - CVD (Silicon Carbide Chemical Vapor Deposition) chlorine-containing epitaxial process tail gas FTrPSA (Full Temperature Range Pressure Swing Adsorption) recovery method. Background technique

[0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, ...

Claims

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