A method for recovering tail gas ftrpsa of sic-cvd chlorine-free epitaxy process based on the reaction of alkane and silane

A recovery method and epitaxy technology, applied in separation methods, chemical instruments and methods, purification/separation of hydrocarbons, etc., can solve the problems of waste of cooling capacity, high cost of treatment, high energy consumption, etc., to reduce tail gas emissions and stabilize the process Effect

Active Publication Date: 2022-07-12
ZHEJIANG TIANCAIYUNJI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high content of non-condensable gas components in the SiC-CVD chlorine-free epitaxy tail gas based on the reaction of alkanes and silanes, such as H2 and CH4, a large amount of cooling capacity is wasted, energy consumption is high, and the cost of processing is also very high. High, generally not used in industry

Method used

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  • A method for recovering tail gas ftrpsa of sic-cvd chlorine-free epitaxy process based on the reaction of alkane and silane
  • A method for recovering tail gas ftrpsa of sic-cvd chlorine-free epitaxy process based on the reaction of alkane and silane
  • A method for recovering tail gas ftrpsa of sic-cvd chlorine-free epitaxy process based on the reaction of alkane and silane

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Embodiment 1

[0048] like figure 1 As shown, a method for recovering tail gas FTrPSA of SiC-CVD chlorine-free epitaxy process based on the reaction of alkane and silane, the specific implementation steps include:

[0049] (1) Raw material gas, using propane (C3H8) as the main carbon (C) source and silane (SiH4) as the silicon (Si) source for chemical vapor deposition (CVD) preparation Based on silicon carbide (SiC) epitaxial growth chlorine-free process The main components of the tail gas are hydrogen (H2), methane (CH4), silane (SiH4), propane (C3H8), and trace amounts of carbon monoxide (CO), carbon dioxide (CO2), higher hydrocarbons (CnHm), and carbon dioxide Silicon (SiO2) and carbon (C) fine particles, normal pressure and normal temperature.

[0050] (2) Pretreatment, the raw gas is pressurized to 0.2~0.3MPa and sent to the pretreatment unit composed of a dust collector, a particle removal filter, and a degreasing mist collector, and successively removes dust, particles, oil mist and ...

Embodiment 2

[0060] like figure 2 As shown, on the basis of Example 1, in the adsorption tower desorption step of the shallow cooling pressure swing adsorption concentration process, after the adsorption tower adsorption step is completed and before the equalization pressure drop or the smooth discharge step starts, the use from the medium shallow cooling rectification process is used. The SiH4-enriched overhead gas or the SiH4 product gas (purity of 99.99%) from the silane purification process in the rectification column-2 in the rectification column in .

Embodiment 3

[0062] like image 3As shown, on the basis of Example 1, the raw material gas from the pretreatment is pressurized and then sent to the shallow cooling pressure swing adsorption concentration process composed of a two-stage PSA system, that is, the raw material gas from the pretreatment process is pressurized to 0.2~0.3MPa, enter from the bottom of the first PSA adsorption tower (1-stage PSA), and the non-adsorbed gas flowing out from the top of the 1-stage PSA tower is methane hydrogen gas, which enters the next process, namely adsorption purification, from the first-stage PSA The desorbed gas from the desorption (reverse discharge, flushing or vacuuming) at the bottom of the tower is sent to the bottom of the second PSA adsorption tower (2-stage PSA) through a blower, and the enriched non-adsorbed phase methane and hydrogen are mixed from the top of the 2-stage PSA tower. The intermediate gas is returned to the 1-stage PSA feed gas - the pretreated feed gas is further recove...

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Abstract

The invention discloses a method for recovering FTrPSA tail gas of SiC-CVD chlorine-free epitaxy process based on the reaction of alkane and silane. Condensation, medium-shallow rectification, propane purification and silane purification process, the H2, silane, C2+ (propane) and methane in the tail gas from the chlorine-free SiC-CVD epitaxy process based on the reaction of alkane and silane are treated with high purity and high yield. Recycling and returning to the SiC-CVD process for recycling not only realizes the recycling and reuse of all components (effective components) of the tail gas of the chlorine-free SiC-CVD epitaxy process, but also reduces the exhaust gas emissions, making up for the blank of the SiC epitaxy process tail gas treatment technology.

Description

technical field [0001] The invention relates to the extraction, purification and preparation of hydrogen (H2), silane (SiH4), methane (CH4) / propane (C3H8) in the process of chlorine-free epitaxial growth of silicon carbide (SiC) of the third generation semiconductor material and the recovery of H2 from the epitaxial tail gas , SiH4, C3H8 reused semiconductor materials and semiconductor process environmental protection field, more specifically, a SiC-CVD (silicon carbide chemical vapor deposition) chlorine-free epitaxy process based on the reaction of alkane and silane. pressure adsorption) recovery method. Background technique [0002] Silicon carbide (SiC), as a third-generation semiconductor material, has been widely used in IT and consumer electronics, automobiles, photovoltaics, photovoltaics, Nuclear reactors, as well as power electronic components such as power switches, frequency conversion, UPS, etc. in the aerospace and military fields with harsh system working con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B3/50C01B33/04C07C7/00C07C7/04C07C7/12C07C7/13C07C9/04C07C9/08B01D53/047B01D53/00B01D3/32B01D3/14
CPCC01B3/50C01B33/046C07C7/005C07C7/04C07C7/12C07C7/13B01D53/047B01D53/002B01D3/14B01D3/32C01B2203/0465C01B2203/048C01B2203/042C01B2203/0405C01B2203/046B01D2253/102B01D2253/106C07C9/04C07C9/08Y02P70/10
Inventor 汪兰海钟娅玲钟雨明陈运唐金财蔡跃明
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD
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