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FTrPSA recovery and reutilization method of chlorine-based SiC-CVD epitaxial process tail gas generated by reaction of ethylene and silane

A technology of silane and ethylene, which is applied in SiC-CVD epitaxy process exhaust gas treatment, semiconductor materials and semiconductor process environmental protection fields, can solve the problems of high production cost of silane/chlorosilane and ethylene, achieve stable recycling and reuse process, and reduce exhaust emissions , Improve the effect of recycling efficiency

Pending Publication Date: 2021-05-25
SICHUAN TECHAIRS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The object of the present invention is to: provide the chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery and recycling method for ethylene and silane reaction, to solve the large amount of ultra-high purity H that needs to be consumed in the existing SiC-CVD epitaxial process 2 , Silane / chlorosilane and ethylene are expensive to prepare and cannot be recovered and reused from tail gas

Method used

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  • FTrPSA recovery and reutilization method of chlorine-based SiC-CVD epitaxial process tail gas generated by reaction of ethylene and silane
  • FTrPSA recovery and reutilization method of chlorine-based SiC-CVD epitaxial process tail gas generated by reaction of ethylene and silane
  • FTrPSA recovery and reutilization method of chlorine-based SiC-CVD epitaxial process tail gas generated by reaction of ethylene and silane

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Experimental program
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Effect test

Embodiment 1

[0065] Such as figure 1 As shown, the chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery and recycling method of ethylene and silane reaction includes the following steps:

[0066] Step 1, raw material gas pretreatment, successively remove dust, particles, oil mist, part of high chlorinated silane, high chlorinated alkanes and high hydrocarbon impurities; raw material gas, with ethylene (C 2 h 4 ) as the main carbon (C) source, with silane (SiH 4 ) is the silicon (Si) source and hydrogen chloride (HCl) is added for chemical vapor deposition (CVD) to prepare the exhaust gas in the chlorine-based epitaxial growth process based on silicon carbide (SiC), and its main composition is hydrogen (H 2 ), HCl, C 2 h 4 , Silane (SiH 4 ) / chlorosilane (SiHmCln), a small amount of methane (CH 4 ), chloroalkanes (CHmCln), chloroalkenes (VCM), and trace amounts of carbon monoxide (CO), carbon dioxide (CO 2 ), ethane and light hydrocarbon components above carbon two and hi...

Embodiment 2

[0079] Such as figure 2 As shown, on the basis of Example 1, under the condition that the concentration of HCl and chlorosilane / chloroalkene contained in the purified raw gas is relatively high, for example, the concentration of chlorine is greater than 3-6%, and the shallow cooling chlorosilane absorption process is added twice. Medium-temperature chlorosilane absorption process, that is, the non-condensable gas 1 from the shallow-cold chlorosilane absorption process is compressed, condensed, and gas-liquid separated, and the formed non-condensable gas 1' is pressurized to 0.6-0.8 MPa, and cooled and heated After being exchanged to 60-120°C, it enters from the bottom of the absorption tower of the additional secondary medium-temperature chlorosilane absorption process, and uses a mixed liquid containing chlorosilane / HCl as the absorbent to spray down from the top of the secondary medium-temperature chlorosilane absorption tower. The condensed gas 1' performs reverse mass tra...

Embodiment 3

[0081] Such as image 3 As shown, on the basis of Examples 1 and 2, the non-condensable gas 2 / 2' formed after compression, condensation and gas-liquid separation from the shallow cold chlorosilane absorption process or the second medium temperature chlorosilane absorption process is blown The pressurization method enters the shallow cold pressure swing adsorption concentration process composed of the two-stage PSA system, that is, the non-condensable gas 2 is pressurized to 0.2-0.3MPa, enters from the bottom of the first PSA adsorption tower (1-stage PSA), and enters from the bottom of the first PSA adsorption tower (1-stage PSA). The non-adsorbed gas flowing out from the top of the first-stage PSA tower is hydrogen-rich gas, which enters the next process, that is, adsorption purification; into the bottom of the second PSA adsorption tower (2-stage PSA), and the enriched non-adsorbed phase hydrogen-rich mixed intermediate gas flows out from the top of the 2-stage PSA tower, an...

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Abstract

The invention discloses an FTrPSA recovery and reutilization method of chlorine-based SiC-CVD epitaxial process tail gas generated by reaction of ethylene and silane, belongs to the field of semiconductor materials and semiconductor process environmental protection, and aims to solve the problems that an existing SiC-CVD epitaxial process is high in preparation cost and tail gas cannot be recycled. H2, HCl, SiH4 and C2H4 are recovered with high purity and high yields through the procedures of pretreatment, shallow-cooling chlorosilane absorption, shallow-cooling pressure swing adsorption concentration, adsorption purification, pressure swing adsorption hydrogen extraction, hydrogen purification, multi-stage evaporation / compression / condensation, HCl refining, shallow-cooling rectification in chlorosilane, ethylene / silane separation, silane purification and ethylene refining, and are returned as raw material gas to the chlorine-based SiC-CVD epitaxial process for reuse, and therefore, all components of the tail gas are recycled, the tail gas emission is reduced, and the blank of the chlorine-based SiC-CVD epitaxial process tail gas treatment technology is filled.

Description

technical field [0001] The invention relates to a chlorine-based SiC-CVD epitaxial process tail gas FTrPSA recovery and recycling method for ethylene and silane reaction. The invention belongs to the technical field of semiconductor materials and semiconductor process environmental protection, and specifically relates to the SiC-CVD epitaxial process tail gas treatment technical field. Background technique [0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, and power electronic components such as power switches, frequency conversion and voltage conversion, and UPS in aerospace and military fields with harsh system working conditions. Among them, epitaxy is a key production step for the wide application of SiC materials. [0003] SiC epitaxial processes include high temperature sublimation (PVT), chemical vapor deposition (CVD), liquid phase growth epita...

Claims

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Application Information

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IPC IPC(8): B01D53/047B01D53/18B01D1/00B01D5/00B01D3/14
CPCB01D53/047B01D53/18B01D1/00B01D5/00B01D3/14Y02P70/10
Inventor 钟雨明钟娅玲汪兰海陈运唐金财蔡跃明蒋强
Owner SICHUAN TECHAIRS
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