SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction

A recovery method and technology for silane, applied in separation methods, chemical instruments and methods, hydrocarbon purification/separation, etc., can solve the problems of waste of refrigeration, high energy consumption, and high processing costs
CN112573485AActive Publication Date: 2021-03-30ZHEJIANG TIANCAIYUNJI TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG TIANCAIYUNJI TECH CO LTD
Publication Date
2021-03-30

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Abstract

The invention discloses a SiCCVD chlorine-free epitaxial process tail gas FTrPSA recovery method based on alkane and silane reaction, which comprises the following steps: pretreatment, shallow coolingpressure swing adsorption concentration, adsorption purification, pressure swing adsorption hydrogen extraction, hydrogen purification, medium-shallow temperature condensation, medium-shallow coolingrectification, propane refining and silane purification. H2, silane, C2+(propane) and methane in the chlorine-free SiCCVD epitaxial process tail gas based on alkane and silane reaction are recycled at high purity and high yield and returned to the SiCCVD process to be recycled, so that all components (effective components) of the chlorine-free SiCCVD epitaxial process tail gas are recycled, and tail gas emission is reduced; the invention fills the blank of a SiC epitaxial process tail gas treatment technology.
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Description

technical field

[0001] The invention relates to the extraction and purification preparation of hydrogen (H2), silane (SiH4), methane (CH4) / propane (C3H8) during the chlorine-free epitaxy growth process of the third-generation semiconductor material silicon carbide (SiC) and the recovery of H2 from epitaxy tail gas , SiH4, C3H8 reused semiconductor materials and semiconductor manufacturing process environmental protection, more specifically, it involves a SiC-CVD (silicon carbide chemical vapor deposition) chlorine-free epitaxy process tail gas FTrPSA (full temperature variable) based on the reaction of alkane and silane pressure adsorption) recovery method. Background technique

[0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, and power electronic components such as power switches, frequency conversion and voltage conversion, and UPS in aerospace and...

Claims

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