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Method for recovering and recycling tail gas FTrPSA in SiC-CVD chlorine-free epitaxial process of ethylene and silane reaction

A silane and ethylene technology, applied in chemical instruments and methods, silicon hydride, absorption purification/separation, etc., can solve problems such as insecurity, greenhouse effect, and ineffective utilization of effective components

Active Publication Date: 2021-04-20
SICHUAN TECHAIRS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to provide a method for recovering and recycling the tail gas FTrPSA of the SiC-CVD chlorine-free epitaxy process based on the reaction of ethylene and silane, so as to solve the existing problem of treating the tail gas of the SiC-CVD chlorine-free epitaxy process based on the reaction of ethylene and silane. The method consumes high energy, costs high, is not safe, a large number of effective components cannot be effectively used, and the emission also brings about the problem of greenhouse effect

Method used

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  • Method for recovering and recycling tail gas FTrPSA in SiC-CVD chlorine-free epitaxial process of ethylene and silane reaction
  • Method for recovering and recycling tail gas FTrPSA in SiC-CVD chlorine-free epitaxial process of ethylene and silane reaction
  • Method for recovering and recycling tail gas FTrPSA in SiC-CVD chlorine-free epitaxial process of ethylene and silane reaction

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Embodiment 1

[0061] Such as figure 1 As shown, the SiC-CVD chlorine-free epitaxial process tail gas FTrPSA recovery and recycling method of ethylene and silane reaction comprises the following steps:

[0062] Step 1, feed gas pretreatment, feed gas, with ethylene (C 2 h 4 ) as the main carbon (C) source, with silane (SiH 4 ) is a silicon (Si) source for chemical vapor deposition (CVD) to prepare the tail gas in the chlorine-free process based on silicon carbide (SiC) epitaxial growth, and its main composition is hydrogen (H 2 ), methane (CH 4 ), silane (SiH 4 ), ethylene (C 2 h 4 ), and trace amounts of carbon monoxide (CO), carbon dioxide (CO 2 ), containing ethane and light hydrocarbons (C 2+ ), and silicon dioxide (SiO 2 ) and carbon (C) fine particles, the pressure is normal pressure or low pressure, and the temperature is normal temperature; pretreatment, the raw material gas is pressurized to 0.2-0.3MPa and sent to the dust collector, particle filter, oil mist collector The...

Embodiment 2

[0073] Such as figure 2 As shown, on the basis of Example 1, in the adsorption tower desorption step of the medium-temperature pressure swing adsorption concentration process, after the adsorption tower adsorption step ends and before the equal pressure drop or the parallel release step begins, adopt the method from the middle and shallow cooling rectification process. The ethylene-rich gas at the bottom of the rectification tower increases the concentration and yield of ethylene in this process.

Embodiment 3

[0075] Such as image 3 As shown, on the basis of Example 1, the medium-temperature pressure swing adsorption concentration and shallow cold pressure swing adsorption concentration processes are combined into a process consisting of two-stage PSA. The first PSA adsorption tower (first-stage PSA) concentrated by pressure adsorption enters from the bottom of the tower, and the intermediate mixture gas of the non-adsorption phase flowing out from the top of the first-stage PSA tower is adsorbed from the second PSA as a shallow cold pressure swing adsorption after cold and heat exchange. The bottom of the tower (2-stage PSA) enters, and the hydrogen-rich methane hydrogen gas in the non-adsorbed phase flowing out from the top of the 2-stage adsorption tower enters the adsorption purification; the desorbed gas from the 1-stage PSA and 2-stage PSA undergoes heat exchange and heating After being compressed, it enters the shallow cold oil absorption process, in which, a part of the int...

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Abstract

The invention discloses a method for recovering and recycling tail gas FTrPSA in a SiC-CVD chlorine-free epitaxial process of ethylene and silane reaction, belongs to the technical field of semiconductor material and semiconductor process environmental protection, and aims to solve the problems that an existing treatment method is high in energy consumption, high in cost and unsafe, a large number of effective components cannot be effectively utilized, and a greenhouse effect is caused by emission. Through the procedures of pretreatment, medium-temperature pressure swing adsorption concentration, shallow-cooling pressure swing adsorption concentration, adsorption purification, hydrogen purification, shallow-cooling oil absorption, medium-shallow-cooling rectification, silane purification and ethylene refining, effective components of hydrogen, silane, ethylene and methane in tail gas are recycled in a high-purity and high-yield mode and returned to the SiC-CVD epitaxial process to be recycled. Therefore, effective components of the tail gas are completely recycled, tail gas emission is reduced, the blank of a SiC-CVD epitaxial process tail gas treatment technology is filled up, and the method is safe, low in energy consumption and low in cost.

Description

technical field [0001] A method for recovering and recycling tail gas FTrPSA of a SiC-CVD chlorine-free epitaxial process by reacting ethylene with silane, the invention belongs to the technical field of semiconductor materials and semiconductor process environmental protection, and specifically relates to the technical field of SiC-CVD epitaxial process tail gas treatment. Background technique [0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photovoltaics, Nuclear reactors, and power electronic components such as power switches, frequency conversion and voltage conversion, and UPS in aerospace and military fields with harsh system working conditions. Among them, epitaxy is a key production step for the wide application of SiC materials. [0003] SiC epitaxial processes include high temperature sublimation (PVT), chemical vapor deposition (CVD), liquid phase growth epitaxy (LPE), mo...

Claims

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Application Information

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IPC IPC(8): C01B3/56C01B33/04C07C7/12C07C7/11C07C7/04C07C11/04C07C7/00C07C9/04
Inventor 钟雨明钟娅玲汪兰海陈运唐金财蔡跃明蒋强
Owner SICHUAN TECHAIRS
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