Method for full temperature range PSA (pressure swing adsorption) ammonia purification and recycling of waste gas from LED-MOCVD (metal-organic chemical vapor deposition) process

A pressure swing adsorption, full temperature range technology, applied in separation methods, chemical instruments and methods, ammonia compounds, etc.

Active Publication Date: 2018-11-06
ZHEJIANG TIANCAIYUNJI TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Other methods, such as the catalytic combustion method, use catalytic fuel to catalyze and oxidize combustible components such as ammonia, hydrogen, and methane in the tail gas at high temperature, and perform follow-up treatment to meet the emission standards, and cannot recover ammonia for reuse; catalytic ammonia decomposition method is The tail gas with high ammonia concentration is catalytically decomposed into H2 and N2 at high temperature, and the H2 or N2 is recovered after treatment, and the ammonia cannot be recovered and reused;
[0011] In a series of existing ultra-pure ammonia preparation methods, that is, using 99.95% industrial anhydrous ammonia as a raw material to prepare more than 99.999% of electronic ammonia gas, there are adsorption methods, rectification methods, adsorption + rectification methods, chemical catalysis method (dehydration), metal getter method and its coupling, but they cannot directly recycle and reuse ammonia-containing waste gas

Method used

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  • Method for full temperature range PSA (pressure swing adsorption) ammonia purification and recycling of waste gas from LED-MOCVD (metal-organic chemical vapor deposition) process
  • Method for full temperature range PSA (pressure swing adsorption) ammonia purification and recycling of waste gas from LED-MOCVD (metal-organic chemical vapor deposition) process
  • Method for full temperature range PSA (pressure swing adsorption) ammonia purification and recycling of waste gas from LED-MOCVD (metal-organic chemical vapor deposition) process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] like figure 1 As shown, a LED-MOCVD process waste gas full-temperature pressure swing adsorption method for ammonia extraction and reuse, the specific implementation steps include:

[0046] (1) Raw material gas, that is, the exhaust gas in the process of preparing light-emitting diode (LED) based on gallium nitride (GaN) epitaxial wafer growth by MOCVD (metal oxide chemical vapor deposition) at normal pressure or low pressure, and its main composition is nitrogen (N2 ): 46% (v / v, the following are similar), hydrogen (H2): 34%, ammonia (NH3): 19%, and the remaining 1% is a small amount of metal ions, particles, arsine, methane (CH4), water (H2O), carbon monoxide (CO), carbon dioxide (CO2), oxygen (O2) and other impurity components, the pressure is normal pressure, and the temperature is 50-70°C;

[0047] (2) Pretreatment, the raw material gas is sent to the pretreatment unit composed of a dust collector, a particle removal filter, and an oil mist collector through a blo...

Embodiment 2

[0054] like figure 1 As shown, on the basis of Example 1, the raw material gas temperature is 20-30°C, and the rest remain unchanged. The high-temperature product gas produced in the ammonia gas purification process is heat-exchanged with the raw material gas to restore its temperature to 50-70°C. And carry out operation by embodiment 1. The purpose is to prevent the high concentration of ammonia in the raw gas from easily escaping into liquid at a temperature of 20°C lower than the ambient temperature and damaging the equipment in the pretreatment process.

Embodiment 3

[0056] like figure 1 As shown, on the basis of Example 1, the raw material gas temperature is 100-120°C, and the rest remains unchanged, and the normal operation can be directly carried out as in Example 1, wherein the pretreated raw material gas is pressurized to 3.0 MPa, and the medium and shallow temperature The operating pressure of the pressure swing adsorption (PSA) concentration process is 3.0MPa, and the operating temperature is 100-120°C; the adsorption waste gas from the medium temperature pressure swing adsorption (PSA) concentration process and the non-condensable gas from the condensation and freezing process are mixed first After being sent to spraying to recover part of the ammonia water, and then entering catalytic combustion and spraying treatment, it will be discharged directly after reaching the national air control emission standard; the ammonia-rich concentrated gas flowing out from the medium and shallow temperature pressure swing adsorption concentration ...

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Abstract

The invention discloses a method for full temperature range PSA (pressure swing adsorption) ammonia purification and recycling of waste gas from LED-MOCVD (metal-organic chemical vapor deposition) process. By procedure of pretreatment, medium and shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction and ammonia purification, the ammonia-containing waste gas from the LED-MOCVD process is purified to conform to the standard of electronic grade ammonia gas required by the LED-MOCVD process, and the waste gas is recycled; the ammoniagas yield is higher than or equal to 70%-85%. The technical problem that atmospheric or low pressure ammonia-containing waste gas from the LED-MOCVD process cannot be returned to the LED-MOCVD processfor use is solved, and the gap in green LED industry and circular economy development is filled in.

Description

technical field [0001] The present invention relates to the electronic environmental protection field of the preparation of process ammonia (NH3) in the manufacturing process of semiconductor light-emitting diode (LED) and the recycling of NH3 in waste gas, and more specifically relates to a kind of LED-MOCVD (metal oxide chemical vapor deposition) ) A method for the recovery and reuse of exhaust gas full temperature range pressure swing adsorption (FTrPSA) to extract ammonia. Background technique [0002] MOCVD (Metal Oxide Chemical Vapor Deposition) process (equipment) is a modern method and means for the research and production of compound semiconductor materials, especially as a method and equipment for the industrial production of new light-emitting materials-light-emitting diodes (LEDs). Its high quality , high stability, high repeatability and large scale are irreplaceable by other semiconductor material growth methods and equipment. It is the main method and means of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/047C01C1/02
CPCB01D53/047C01C1/024C23C16/4402C23C16/4412C23C16/45593B01D2257/406B01D2258/0216B01D2259/40054B01D53/053B01D51/10C01B3/56C01C1/12C01C1/003Y02C20/20Y02P20/50B01D53/002B01D53/26B01D53/40B01D53/44B01D53/78B01D53/8671B01D53/8678B01D2253/102B01D2253/104B01D2253/116B01D2255/1023B01D2257/104B01D2257/108B01D2257/708B01D2257/80
Inventor 汪兰海钟娅玲
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD
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