Antireflection coating composition and application thereof

Abstract

The present invention provides an antireflective coating composition. Theantireflective coating composition can strongly absorb radiation of 100-300 nm by using the extinction resin of the present invention, particularly has high light absorption performance at 248 nm, and has an extinction coefficient K of 0.4 or more or 0.5 or more, thereby allowing the use of a thinner coating layer and a shorter etching time, and the prepared antireflective coating material is easy to remove, and is particularly suitable for being used in thin-layer photoresist to obtain a high-resolution photoetching pattern; meanwhile, the BARC layer provided by the invention also has an improved plasma etching rate relative to a photoresist material, so that an image can be completely transferred to a substrate to obtain a good photoresist image. Further, through the interaction of the solid components, the interference effect in the photoresist can be eliminated; and through the combined action of a catalyst, a crosslinking agent and extinction resin, the antireflection coating composition with good storage stability and high differential solubility after curing is obtained.

Description

technical field [0001] The invention relates to the technical field of photolithography, and more specifically, the invention relates to an antireflection coating composition and its application. Background technique [0002] In the photolithography process of integrated circuit manufacturing, due to the optical reflection of the bottom layer of the substrate, the light intensity ("Iz" for short) changes sinusoidally and periodically along the depth direction of the photoresist, resulting in sinusoidal fluctuations of the sidewall of the photoresist pattern and CD Dimensional controllability is poor. The photoresist film opening energy (abbreviated as "Eth") and optimal exposure energy (abbreviated as "Eop") show sinusoidal periodic fluctuations with the increase of photoresist film thickness, which makes the controllability of the exposure energy of the non-flat surface variable. Difference. The ultraviolet light is reflected to the dark area of ​​the photoresist spatial ...

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Problems solved by technology

[0004] The deficiencies of the current BARC layer are: 1. The extinction coefficient k of the existing BARC layer is below 0.4. In order to eliminate the standing waves and interference effects produced in the photolithography process, the existing BARC layer needs to use a thicker thickness, which makes it difficult to remove; further However, if used in a thin layer of photoresist, a longer etching time will over-erode the unexposed part of the photoresist coating, so that the photoresist cannot protect the pattern, and thus cannot produce high-resolution photolithography. 2. The etching rate is low, resulting in excessive loss of the unexposed part of the photoresist film during the etching process, making the photoresist pattern damaged or difficult to accurately transfer to the substrate; 3. Using acid as a catalyst, storage stability Poor; and the acid catalyst will form residues during plasma etching, which will affect the subsequent process and cause a high defect rate of the substrate; it will shorten the service life of the abutment during spin coating and baking

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