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Preparation method of germanium-tin Schottky diode for weak energy collection
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A Schottky diode, energy harvesting technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low RF power density
Inactive Publication Date: 2021-04-20
XIAN CREATION KEJI CO LTD
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There are many wireless terminals such as Wi-Fi routers, laptops, and tablets in the living environment. According to the evaluation of the distribution of RF energy in the environment in China, the RF signals in the 2.38-2.45G Wi-Fi frequency band are the main RF signal sources in the environment, but The measured ambient RF power density is low, the value <-20dBm
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[0046] See figure 1 , figure 1 It is a flow chart of a preparation method of a germanium-tin Schottky diode for weak energy harvesting provided by an embodiment of the present invention; figure 1 The preparation method of the germanium-tin Schottky diode for weak energy harvesting shown includes:
[0047] S101. Select a substrate.
[0048] The substrate material of the embodiment of the present invention may be Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs or other III / V compound semiconductors, including multilayer structures composed of these semiconductors, or an on-insulator Any of silicon (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), germanium-on-insulator (GeOI), and the like.
[0049] As a preferred embodiment of the present invention, the substrate material is preferably a Si substrate with crystal orientation, and the Si substrate is selected because of its low cost and easy-to-peel char...
Embodiment 2
[0086] On the basis of the above embodiments, this embodiment combines the attached Figures 2a-2j , select the optimal preparation conditions, and further illustrate the preparation method of the germanium-tin Schottky diode for weak energy harvesting of the present invention with refinement steps.
[0087] S201, select the substrate: if Figure 2a As shown, select Si substrate 001 with crystal orientation;
[0088] S202. Cleaning: use dilute hydrofluoric acid and deionized water to circularly clean the surface of the Si substrate 001;
[0089] S203, preparing a low-temperature Ge buffer layer: as Figure 2b As shown, a 150-200nm Ge layer, ie, a low-temperature Ge buffer layer 002, is grown on a Si substrate 001 at a temperature of 275-325° C. by RPCVD process;
[0090] S204, preparing a high-temperature Ge buffer layer: as Figure 2c As shown, a Ge layer of 400-500nm is grown on the first low-temperature Ge buffer layer at a temperature of 500-600° C. by RPCVD process, ...
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Abstract
The invention relates to a preparation method of a germanium-tinSchottky diode for weak energy collection. The preparation method comprises the following steps: selecting a substrate; forming a low-temperature Ge buffer layer on the upper surface of the substrate; forming a high-temperature Ge buffer layer on the upper surface of the low-temperature Ge buffer layer; Forming an n<+>DR-Ge1-xSnx layer on the upper surface of the high-temperature Ge buffer layer; forming an n<->DR-Ge1-xSnx layer on the upper surface of the n<+>DR-Ge1-xSnx layer; forming a Si cap layer on the upper surface of the n<->DR-Ge1-xSnx layer; etching to the upper surface of the n<+>DR-Ge1-xSnx layer to form a step structure; forming a first electrode on the upper surface of the Si cap layer; and forming a second electrode on the upper surface of the n<+>DR-Ge1-xSnx layer. By introducing the Si cap layer and the alloying germaniumtin layer, the electron mobility can be improved while the turn-on voltage is reduced, it is ensured that the rectification efficiency is improved, and energy collection in a weak energy density environment is achieved.
Description
technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a germanium-tinSchottky diode for weak energy collection, an energy collection circuit and an antenna. Background technique [0002] The Internet of Things (IoT) technology and semiconductor integration technology have greatly promoted the development of miniaturized, low-power wireless sensing devices, and it is estimated that the Internet of Things can cover nearly one billion sensors worldwide. At present, batteries are the main power supply for these ultra-low-power electronic products, and the limited battery capacity and life are a technical bottleneck restricting the further development and application of these products. [0003] A wireless power transfer system (Wireless Power Transfer, WPT) refers to a system device that can break through the transmission line to transmit electric energy in space, in which the electromagnetic wave (microwave ba...
Claims
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