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Corrosion-resistant gas conveying component and plasma processing device thereof

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as metal pollution and solid particle pollution, and achieve the effects of reducing waste, preventing corrosion and solving parameter drift.

Pending Publication Date: 2021-04-27
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a corrosion-resistant gas conveying part and its plasma processing device. By combining the gas inlet conveying part, the gas diffusion part and the gas inlet accommodation hole and the diffusion accommodation space in the bushing body, a multi-component The structural design avoids the surface defects of the bushing body caused by high temperature, making the process gas directly contact with the bushing body, effectively preventing the process gas from corroding the gas delivery system and plasma treatment device, and solving the reaction caused by corrosive gases The problem of metal contamination and solid particle contamination in the chamber

Method used

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  • Corrosion-resistant gas conveying component and plasma processing device thereof
  • Corrosion-resistant gas conveying component and plasma processing device thereof
  • Corrosion-resistant gas conveying component and plasma processing device thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] In this embodiment, the plasma processing device is an inductively coupled plasma processing device (ICP device).

[0047] Such as figure 1Shown is an inductively coupled plasma processing device of this embodiment. The radio frequency power loaded on the inductive coupling coil 1003 is coupled into the reaction chamber 1001 through the dielectric window 1002 to form an electron region in the reaction chamber 1001 to ionize the process gas supplied to the reaction chamber 1001 through the gas delivery system to form plasma or The ions are used to etch the wafer 1008 placed on the base 1004 at the bottom of the reaction chamber 1001 . A liner body 1005 (liner) is arranged around the side wall of the reaction chamber 1001 , and the liner body 1005 supports the edge of the dielectric window 1002 above it. The liner main body 1005 is grounded by contacting the cavity, and a baffle 1051 extending downward from the inner wall of the liner main body 1005 surrounds the inner ...

Embodiment 2

[0059] Based on the structural characteristics of the inductively coupled plasma processing device in Embodiment 1, this embodiment makes some changes to the structure of the liner body 2005, mainly for the inner side wall of the liner body 2005 and the diffusion accommodation space 2054. changed.

[0060] Such as Figure 4 Shown is a schematic structural diagram of the gas conveying part of the inductively coupled plasma processing apparatus of this embodiment. Compared with Embodiment 1, the inner wall of the bushing body 2005 in this embodiment does not have the air outlet hole 1052, and the diffusion accommodation space 2054 is a step, and the gas in the diffusion accommodation space 2054 diffuses The inner wall of the part 2007 directly contacts the environment of the reaction chamber 2001, and the process gas is transported from the gas pipeline to the gas diffusion channel 2071 of the gas diffusion part 2007 through the gas inlet channel 2061 of the gas inlet delivery ...

Embodiment 3

[0063] Based on the structural characteristics of the inductively coupled plasma processing device in the second embodiment, this embodiment makes some changes to the structure of the gas diffusion part 3007, mainly for the gas diffusion channel 3071 in the gas diffusion part 3007 .

[0064] Such as Figure 5 Shown is a schematic structural diagram of the gas conveying part of the inductively coupled plasma processing apparatus of this embodiment. Compared with Embodiment 2, the gas diffusion channel 3071 of the gas diffusion component 3007 in this embodiment is a closed gas channel, such as a channel with a circular cross-section, and the dielectric window 3002 contacts the upper surface of the gas diffusion component 3007 without contacting the upper surface of the gas diffusion component 3007. The gas diffusion channels 3071 are in contact. The process gas delivery process of the device is the same as that of the second embodiment. It should be noted that the diffusion a...

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Abstract

The invention discloses a corrosion-resistant gas conveying component and a plasma processing device thereof. A gas inlet conveying component, a gas diffusion component and a gas inlet accommodating hole and a diffusion accommodating space in a bushing main body are combined, a multi-component structural design is adopted, the process gas is prevented from being in direct contact with the bushing main body due to the surface defects of the bushing main body caused by high temperature, and the corrosion of corrosive gas in the process gas to a gas conveying system and a plasma processing device is effectively prevented; the problems of metal pollution and solid particle pollution in the reaction chamber caused by corrosive gas are solved, and daily maintenance work of workers is facilitated due to the design of a multi-component structure.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a corrosion-resistant gas delivery component and a plasma processing device thereof. Background technique [0002] In a typical plasma processing device, its gas delivery components play a crucial role. The process gas output from the gas box is supplied to the reaction chamber through the gas delivery part, and the process gas is ionized to form plasma, so as to process the wafer placed in the reaction chamber. [0003] The gas delivery channel in the gas delivery part is usually directly processed several feed-in holes in the aluminum alloy bushing. During the process of process gas delivery, the process gas first rushes into the gas delivery channel, forming a relative Airtight, high-pressure air cavity. The process gas with low saturated vapor pressure is easy to gather and condense in the gas delivery channel. In order to prevent the process gas from condensing in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/3244H01J37/32119H01J37/32477H01J37/32467H01L21/67017
Inventor 苏宜龙左涛涛陈妙娟
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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