High-voltage silicon carbide MOS device and preparation method thereof
A technology of MOS devices and high-voltage silicon carbide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high loss, large specific on-resistance, slow operation, etc., and achieve lower specific on-resistance, Increased breakdown voltage and high critical electric field effects
Inactive Publication Date: 2021-05-04
厦门芯一代集成电路有限公司
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Problems solved by technology
[0005] (1) Slow operation under high temperature conditions;
[0006] (2) The loss is high under high temperature conditions;
[0008] (4) Larger specific on-resistance
[0009] Therefore, there is an urgent need for a high-voltage silicon carbide MOS device, which can solve the phenomenon of slow operation and high loss under high temperature conditions, as well as improve the breakdown voltage and reduce the specific on-resistance
Method used
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Embodiment 1
[0044] The thickness of the N-type lightly doped buffer zone 2 is 125 μm, and the doping concentration of the N-type lightly doped buffer zone 2 is 5×10 14 cm -3 , the thickness of the P-type well region 3 is 2.1 μm, the distance between the two P-type well regions 3 is 3 μm, the width of each channel region on the P-type well region 3 is 1 μm, and Its carrier mobility is 7.5cm 2 / Vs, the thickness of the high-K insulating layer 6 is 50 nm; the thickness of the gate polysilicon region 7 is 1 μm, and its width is 5 μm.
[0045] refer to figure 2 , a method for preparing a high-voltage silicon carbide MOS device, the method comprising the following steps:
[0046] S1. Cleaning and exposure: Cleaning and drying the SiC substrate, coating a layer of photoresist on its upper surface, exposing with a mask defined by the N-type heavily doped substrate 1 and a laser, after developing Forming the N-type heavily doped substrate 1 definition;
[0047] S2. Formation of N-type heavil...
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The invention discloses a high-voltage silicon carbide MOS device and a preparation method thereof. The device is characterized in that a drain electrode is formed on the lower surface of an N-type heavily-doped substrate, an N-type lightly-doped buffer region is arranged on the N-type heavily-doped substrate, two non-adjacent P-type well regions are arranged on the N-type lightly-doped buffer region, and P-type heavily-doped source regions and N-type heavily-doped source regions are arranged on the P-type well regions. The P-type heavily-doped source regiond and the N-type heavily-doped source regiond are transversely connected, certain distances are formed between the side edges of the N-type heavily-doped source regions and the edge of the P-type well regions, a high-K insulating layer is arranged on the upper surfaces of the N-type lightly-doped buffer regions and the P-type well regions, and a grid polycrystalline silicon region is arranged on the upper surface of the high-K insulating layer. A gate electrode is arranged on the upper surface of the gate polycrystalline silicon region; and source electrodes are arranged on the upper surfaces of the P-type heavily doped source regions and the N-type heavily doped source regions. According to the high-voltage silicon carbide MOS device, the performance of fast operation and low loss of a power device can be effectively achieved, and the switching speed can be increased under the high-frequency condition.
Description
technical field [0001] The invention relates to the technical field of semiconductor power, in particular to a high-voltage silicon carbide MOS device and a preparation method thereof. Background technique [0002] A power MOS device is an electronic switch whose switching state is controlled by the gate voltage. When it is turned on, it is conducted by electrons or holes. It has the advantages of simple control and fast switching, so it is widely used in power electronic systems, mainly including Switching power supply and motor drive etc. Breakdown voltage and specific on-resistance are the two main parameters of power MOS. As the breakdown voltage of power devices increases, the specific on-resistance also increases sharply, especially for high-voltage MOS devices. Traditional MOS devices use silicon materials as substrates to manufacture MOS devices on silicon wafers. This silicon-based MOS device operates slowly under high temperature conditions, has low breakdown volt...
Claims
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IPC IPC(8): H01L29/78H01L29/10H01L21/04
CPCH01L29/7802H01L29/1033H01L21/0445H01L29/66068
Inventor 陈利
Owner 厦门芯一代集成电路有限公司