Solid state image sensor

A technology of solid-state imaging elements and structural units, applied in optical elements, photography, instruments, etc., can solve the problem of reducing the amount of light received by the photoelectric conversion part, and achieve the effect of excellent heat resistance and transparency

Pending Publication Date: 2021-05-04
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason for this is that the incident light is reflected to the surface of the microlens that collects the incident light, reducing the amount of light received in the photoelectric conversion part.

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0121]

[0122] The composition of the present invention is prepared by, for example, mixing resin (A), component (B) and optionally additives (X) in a predetermined ratio and dissolving them in an organic solvent (G). The prepared radiation-sensitive composition is preferably filtered, for example, with a filter having a pore diameter of about 0.2 μm.

[0123] [Manufacturing method of solid-state imaging device]

[0124] An example of the manufacturing method of the solid-state imaging device of the present invention is described below.

[0125] The method for manufacturing a solid-state imaging device of the present invention includes: a step of forming a coating film of the radiation-sensitive composition of the present invention on at least a microlens; a step of irradiating a part of the coating film with radiation; developing the coating film, removing the coating film formed at other than desired locations; and forming the cured film on the microlens by heating the d...

Embodiment

[0141] Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples. "Parts" mean "parts by mass" unless otherwise mentioned.

[0142] [Weight average molecular weight (Mw) and number average molecular weight (Mn)]

[0143] Mw and Mn of the resin were measured by the gel permeation chromatography (GPC) method under the following conditions. In addition, the molecular weight distribution (Mw / Mn) was calculated from the obtained Mw and Mn.

[0144] Device: GPC-101 (manufactured by Showa Denko)

[0145] GPC column: Connect GPC-KF-801, GPC-KF-802, GPC-KF-803, and GPC-KF-804 manufactured by Shimadzu GLC

[0146] Mobile Phase: Tetrahydrofuran

[0147] Column temperature: 40°C

[0148] Flow rate: 1.0mL / min

[0149] Sample concentration: 1.0% by mass

[0150] Sample injection volume: 100uL

[0151] Detector: Differential refractometer

[0152] Standard material: monodisperse polystyrene

[0153] [Synthes...

Synthetic example 1

[0177] [Synthesis Example 1] (Synthesis of Resin (M-1))

[0178] Into a flask equipped with a cooling tube and a stirrer, 8 parts of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts of diethylene glycol methyl ether were charged. Then, 30 parts of 1,1,1,3,3,3-hexafluoro-2-(4-vinylphenyl)-propan-2-ol, 5 parts of α-methyl-p-hydroxybenzene Ethylene, 20 parts of methacrylic acid-3,4-epoxycyclohexyl methyl ester and 45 parts of N-vinylphthalimide were replaced with nitrogen, slowly stirred, and the temperature of the solution The temperature was raised to 70° C., and the temperature was maintained for 5 hours to perform polymerization, whereby a polymer solution containing the resin (M-1) was obtained. The solid content concentration of the polymer solution was 34% by mass, the Mw of the resin (M-1) was 10,000, and the molecular weight distribution (Mw / Mn) was 2.1.

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Abstract

Provided is a solid state image sensor comprising: a photoelectric converter that performs photoelectric conversion in response to incident light; a microlens for focusing the incident light on the photoelectric converter; and a cured film that is formed, on the microlens, from a radiation-sensitive composition containing a resin (A) having a silicon atom and an aromatic ring, and a radiation-sensitive compound (B).

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] Solid-state imaging devices such as charge coupled device (CCD) image sensors and complementary metal oxide semiconductor (complementary metal oxide semiconductor (CMOS) image sensors) are mounted in imaging devices such as digital cameras. Solid-state imaging devices have very wide wavelength sensitivity from visible light that can be recognized by the human eye to infrared light with a longer wavelength than that. [0003] The solid-state imaging device has microlenses. As the resolution of the solid-state imaging device increases, there is a problem that the amount of light received in the photoelectric conversion portion decreases. The reason for this is that incident light is reflected to the surface of the microlens that collects the incident light, reducing the amount of light received in the photoelectric conversion portion. To address this problem, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146G02B1/111G02B3/00G03F7/039G03F7/075G03F7/20
CPCG02B1/111G02B3/00G03F7/075G03F7/039G03F7/20H01L27/146
Inventor 成子朗人工藤和生
Owner JSR CORPORATIOON
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